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(2010) Impact of ion implantation boundary dimensionality on boron transient diffusion in submicron scale patterns. Applied Physics Letters, 97 (12). 121907pp. doi:10.1063/1.3492840

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Reference TypeJournal (article/letter/editorial)
TitleImpact of ion implantation boundary dimensionality on boron transient diffusion in submicron scale patterns
JournalApplied Physics Letters
Year2010 (September 20)Volume97
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.3492840Search in ResearchGate
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Mindat Ref. ID8586735Long-form Identifiermindat:1:5:8586735:4
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Full Reference(2010) Impact of ion implantation boundary dimensionality on boron transient diffusion in submicron scale patterns. Applied Physics Letters, 97 (12). 121907pp. doi:10.1063/1.3492840
Plain Text(2010) Impact of ion implantation boundary dimensionality on boron transient diffusion in submicron scale patterns. Applied Physics Letters, 97 (12). 121907pp. doi:10.1063/1.3492840
In(2010, September) Applied Physics Letters Vol. 97 (12) AIP Publishing

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Michel, A. E., Rausch, W., Ronsheim, P. A. (1987) Implantation damage and the anomalous transient diffusion of ion‐implanted boron. Applied Physics Letters, 51 (7). 487-489 doi:10.1063/1.98375
Ravi, J., Erokhin, Yu., Rozgonyi, G. A., White, C. W. (1995) Suppression of transient enhanced diffusion following in situ photoexcitation during boron ion implantation. Applied Physics Letters, 67 (15). 2158-2160 doi:10.1063/1.114752
Nishikawa, Satoshi, Tanaka, Akira, Yamaji, Tetsuo (1992) Reduction of transient boron diffusion in preamorphized Si by carbon implantation. Applied Physics Letters, 60 (18). 2270-2272 doi:10.1063/1.107051
Fan, D., Jaccodine, R. J. (1989) Reduction of transient‐enhanced diffusion of boron in silicon by implantation through oxide. Applied Physics Letters, 54 (7). 603-605 doi:10.1063/1.100891
Marchiando, J. F., Albers, John (1987) Effects of ion‐implantation damage on two‐dimensional boron diffusion in silicon. Journal of Applied Physics, 61 (4). 1380-1391 doi:10.1063/1.338117
Garaj, Slaven, Hubbard, William, Golovchenko, J. A. (2010) Graphene synthesis by ion implantation. Applied Physics Letters, 97 (18). 183103pp. doi:10.1063/1.3507287
Agarwal, Aditya, Gossmann, H.-J., Eaglesham, D. J., Herner, S. B., Fiory, A. T., Haynes, T. E. (1999) Boron-enhanced diffusion of boron from ultralow-energy ion implantation. Applied Physics Letters, 74 (17). 2435-2437 doi:10.1063/1.123872
Soleimani, Hamid R. (1992) Modeling of High-Dose Ion Implantation-Induced Dopant Transient Diffusion, and Dopant Transient Activation in Silicon (Boron and Arsenic Diffusion). Journal of the Electrochemical Society, 139. 3275pp. doi:10.1149/1.2069067
Johnson, B. C., McCallum, J. C., Atanacio, A. J., Prince, K. E. (2009) Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation. Applied Physics Letters, 95 (10). 101911pp. doi:10.1063/1.3224189
Giles, Martin D. (1993) Transient phosphorus diffusion from silicon and argon implantation damage. Applied Physics Letters, 62 (16). 1940-1942 doi:10.1063/1.109497
Lulli, G., Bianconi, M., Solmi, S., Napolitani, E., Carnera, A. (2000) Vacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions. Journal of Applied Physics, 87 (12). 8461-8466 doi:10.1063/1.373564
 
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