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Lischka, K., Fantner, E. J., Ryan, T. W., Sitter, H. (1989) X‐ray rocking curves from (100) and (111) CdTe grown on (100) GaAs by hot wall epitaxy. Applied Physics Letters, 55 (13). 1309-1311 doi:10.1063/1.101640

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Reference TypeJournal (article/letter/editorial)
TitleX‐ray rocking curves from (100) and (111) CdTe grown on (100) GaAs by hot wall epitaxy
JournalApplied Physics Letters
AuthorsLischka, K.Author
Fantner, E. J.Author
Ryan, T. W.Author
Sitter, H.Author
Year1989 (September 25)Volume55
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.101640Search in ResearchGate
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Mindat Ref. ID8487963Long-form Identifiermindat:1:5:8487963:5
GUID0
Full ReferenceLischka, K., Fantner, E. J., Ryan, T. W., Sitter, H. (1989) X‐ray rocking curves from (100) and (111) CdTe grown on (100) GaAs by hot wall epitaxy. Applied Physics Letters, 55 (13). 1309-1311 doi:10.1063/1.101640
Plain TextLischka, K., Fantner, E. J., Ryan, T. W., Sitter, H. (1989) X‐ray rocking curves from (100) and (111) CdTe grown on (100) GaAs by hot wall epitaxy. Applied Physics Letters, 55 (13). 1309-1311 doi:10.1063/1.101640
In(1989, September) Applied Physics Letters Vol. 55 (13) AIP Publishing

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Lischka, K., Schmidt, T., Pesek, A., Sitter, H. (1989) Low‐temperature photoluminescence from CdTe grown by hot‐wall epitaxy on GaAs. Applied Physics Letters, 55 (12). 1220-1222 doi:10.1063/1.101660
Schikora, D., Sitter, H., Humenberger, J., Lischka, K. (1986) High quality CdTe epilayers on GaAs grown by hot‐wall epitaxy. Applied Physics Letters, 48 (19). 1276-1278 doi:10.1063/1.97002
Pauli, H., Hingerl, K., Abramof, E., Sitter, H., Zajicek, H., Lischka, K. (1993) p‐type CdTe epilayers grown by hot‐wall‐beam epitaxy. Journal of Applied Physics, 73 (8). 4061-4063 doi:10.1063/1.352854
Tatsuoka, H., Kuwabara, H., Nakanishi, Y., Fujiyasu, H. (1990) CdTe (111)B growth on oriented and misoriented GaAs (100) grown by hot‐wall epitaxy. Journal of Applied Physics, 68 (9). 4592-4597 doi:10.1063/1.346167
Schmidt, T., Sitter, H., Lischka, K. (1990) Bulk-like low-temperature photoluminescence from CdTe/GaAs grown by hot-wall epitaxy. Journal of Crystal Growth, 101 (1). 190-194 doi:10.1016/0022-0248(90)90963-l
Tatsuoka, H., Kuwabara, H., Nakanishi, Y., Fujiyasu, H. (1990) Strain relaxation of CdTe(100) layers grown by hot‐wall epitaxy on GaAs(100) substrates. Journal of Applied Physics, 67 (11). 6860-6864 doi:10.1063/1.346079
Rauhala, E., Keinonen, J., Rakennus, K., Pessa, M. (1987) Depth profiles of defects in CdTe(100) overlayers grown by molecular beam epitaxy on GaAs(100). Applied Physics Letters, 51 (13). 973-974 doi:10.1063/1.98780
Ballingall, J. M., Wroge, M. L., Leopold, D. J. (1986) (100) and (111) oriented CdTe grown on (100) oriented GaAs by molecular beam epitaxy. Applied Physics Letters, 48 (19). 1273-1275 doi:10.1063/1.97001
Abramof, E., Pesek, A., Juza, P., Sitter, H., Fromherz, T., Jantsch, W. (1992) Growth and characterization of Zn1−xMnxTe epilayers grown by hot wall epitaxy on (001)GaAs substrates. Applied Physics Letters, 60 (19). 2368-2370 doi:10.1063/1.107028
Schäfer, P., Niebsch, H. (1987) Growth of (100) and (111) CdTe films on (100) GaAs by hot-wall epitaxy. physica status solidi (a), 99 (1). doi:10.1002/pssa.2210990148
Hsu, C., Sivananthan, S., Chu, X., Faurie, J. P. (1986) Polarity determination of CdTe(111) orientation grown on GaAs(100) by molecular beam epitaxy. Applied Physics Letters, 48 (14). 908-910 doi:10.1063/1.96654
 
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