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Sandhu, G. S., Swanson, M. L., Chu, W. K. (1989) Doping of diamond by coimplantation of carbon and boron. Applied Physics Letters, 55 (14). 1397-1399 doi:10.1063/1.101605

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Reference TypeJournal (article/letter/editorial)
TitleDoping of diamond by coimplantation of carbon and boron
JournalApplied Physics Letters
AuthorsSandhu, G. S.Author
Swanson, M. L.Author
Chu, W. K.Author
Year1989 (October 2)Volume55
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.101605Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8488037Long-form Identifiermindat:1:5:8488037:6
GUID0
Full ReferenceSandhu, G. S., Swanson, M. L., Chu, W. K. (1989) Doping of diamond by coimplantation of carbon and boron. Applied Physics Letters, 55 (14). 1397-1399 doi:10.1063/1.101605
Plain TextSandhu, G. S., Swanson, M. L., Chu, W. K. (1989) Doping of diamond by coimplantation of carbon and boron. Applied Physics Letters, 55 (14). 1397-1399 doi:10.1063/1.101605
In(1989, October) Applied Physics Letters Vol. 55 (14) AIP Publishing

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Sandhu, G. S., Chu, W. K. (1989) Reactive ion etching of diamond. Applied Physics Letters, 55 (5). 437-438 doi:10.1063/1.101890
Mort, J., Kuhman, D., Machonkin, M., Morgan, M., Jansen, F., Okumura, K., LeGrice, Y. M., Nemanich, R. J. (1989) Boron doping of diamond thin films. Applied Physics Letters, 55 (11). 1121-1123 doi:10.1063/1.101676
Harshavardhan, K. Solomon, Yalamanchi, R. S., Rao, L. Kameswara (1989) Formation of crystalline diamond from amorphous diamond‐like carbon films by pulsed laser irradiation. Applied Physics Letters, 55 (4). 351-353 doi:10.1063/1.101906
Pearton, S. J., Ren, F., Abernathy, C. R., Hobson, W. S., Chu, S. N. G., Kovalchick, J. (1989) Carbon and zinc delta doping for Schottky barrier enhancement onn‐type GaAs. Applied Physics Letters, 55 (13). 1342-1344 doi:10.1063/1.101650
Morton, R., Lau, S. S., Poker, D. B., Chu, P. K. (1996) Coimplantation of carbon and group II acceptors in GaAs. Applied Physics Letters, 68 (8). 1135-1137 doi:10.1063/1.115737
MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Chu, S. N. G. (1995) Annealing behavior of AlxGa1−xAs:C grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 66 (11). 1397-1399 doi:10.1063/1.113213
Gourley, P. L., Lyo, S. K., Dawson, L. R. (1989) High‐efficiency, continuous‐wave, epitaxial surface‐emitting laser with pseudomorphic InGaAs quantum wells. Applied Physics Letters, 54 (15). 1397-1399 doi:10.1063/1.100678
Landstrass, M. I., Ravi, K. V. (1989) Hydrogen passivation of electrically active defects in diamond. Applied Physics Letters, 55 (14). 1391-1393 doi:10.1063/1.101604
Hobson, W. S., Pearton, S. J., Schubert, E. F., Cabaniss, G. (1989) Zinc delta doping of GaAs by organometallic vapor phase epitaxy. Applied Physics Letters, 55 (15). 1546-1548 doi:10.1063/1.102240
Shimizu, Y., Takamizawa, H., Inoue, K., Toyama, T., Nagai, Y., Okada, N., Kato, M., Uchida, H., Yano, F., Tsunomura, T., Nishida, A., Mogami, T. (2011) Impact of carbon coimplantation on boron behavior in silicon: Carbon–boron coclustering and suppression of boron diffusion. Applied Physics Letters, 98 (23). 232101pp. doi:10.1063/1.3597303
Morton, R., Lau, S. S., Poker, D. B., Chu, P. K., Fung, K. K., Wang, N. (1998) Carbon and group II acceptor coimplantation in GaAs. Journal of Applied Physics, 84 (9). 4929-4934 doi:10.1063/1.368737
 
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