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O’Reilly, E. P. (1989) Pressure dependence ofDXcenter mobility in highly doped GaAs. Applied Physics Letters, 55 (14). 1409-1411 doi:10.1063/1.101609

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Reference TypeJournal (article/letter/editorial)
TitlePressure dependence ofDXcenter mobility in highly doped GaAs
JournalApplied Physics Letters
AuthorsO’Reilly, E. P.Author
Year1989 (October 2)Volume55
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.101609Search in ResearchGate
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Mindat Ref. ID8488045Long-form Identifiermindat:1:5:8488045:5
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Full ReferenceO’Reilly, E. P. (1989) Pressure dependence ofDXcenter mobility in highly doped GaAs. Applied Physics Letters, 55 (14). 1409-1411 doi:10.1063/1.101609
Plain TextO’Reilly, E. P. (1989) Pressure dependence ofDXcenter mobility in highly doped GaAs. Applied Physics Letters, 55 (14). 1409-1411 doi:10.1063/1.101609
In(1989, October) Applied Physics Letters Vol. 55 (14) AIP Publishing

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Schubert, E. F., Pfeiffer, Loren, West, K. W., Izabelle, A. (1989) Dopant distribution for maximum carrier mobility in selectively doped Al0.30Ga0.70As/GaAs heterostructures. Applied Physics Letters, 54 (14). 1350-1352 doi:10.1063/1.100712
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Mendez, E. E., Wang, W. I. (1985) Temperature dependence of hole mobility in GaAs‐Ga1−xAlxAs heterojunctions. Applied Physics Letters, 46 (12). 1159-1161 doi:10.1063/1.95743
Blood, P., Kucharska, A. I., Foxon, C. T., Griffiths, K. (1989) Temperature dependence of spontaneous emission in GaAs‐AlGaAs quantum well lasers. Applied Physics Letters, 55 (12). 1167-1169 doi:10.1063/1.101686
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