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Darken, L. S., Jellison, G. E. (1989) Temperature dependence of acceptor‐hole recombination in germanium. Applied Physics Letters, 55 (14). 1424-1426 doi:10.1063/1.102281

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Reference TypeJournal (article/letter/editorial)
TitleTemperature dependence of acceptor‐hole recombination in germanium
JournalApplied Physics Letters
AuthorsDarken, L. S.Author
Jellison, G. E.Author
Year1989 (October 2)Volume55
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.102281Search in ResearchGate
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Mindat Ref. ID8488059Long-form Identifiermindat:1:5:8488059:8
GUID0
Full ReferenceDarken, L. S., Jellison, G. E. (1989) Temperature dependence of acceptor‐hole recombination in germanium. Applied Physics Letters, 55 (14). 1424-1426 doi:10.1063/1.102281
Plain TextDarken, L. S., Jellison, G. E. (1989) Temperature dependence of acceptor‐hole recombination in germanium. Applied Physics Letters, 55 (14). 1424-1426 doi:10.1063/1.102281
In(1989, October) Applied Physics Letters Vol. 55 (14) AIP Publishing

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Darken, L. S., Jellison, G. E. (1993) Resolution degradation of coaxialp‐type germanium detectors due to hole trapping by point defects. Journal of Applied Physics, 74 (7). 4557-4560 doi:10.1063/1.354374
Darken, L. S. (1989) Photothermal ionization spectroscopy of donors in high‐purity germanium. Journal of Applied Physics, 65 (3). 1118-1125 doi:10.1063/1.343048
O’Reilly, E. P. (1989) Pressure dependence ofDXcenter mobility in highly doped GaAs. Applied Physics Letters, 55 (14). 1409-1411 doi:10.1063/1.101609
Verbist, K., Vasiliev, A. L., Van Tendeloo, G. (1995) Y2O3 inclusions in YBa2Cu3O7−δ thin films. Applied Physics Letters, 66 (11). 1424-1426 doi:10.1063/1.113266
Darken, L. S. (1992) Theoretical model for hole capture at acceptors in germanium. Physical Review Letters, 69 (19). 2839-2842 doi:10.1103/physrevlett.69.2839
Freitas, J. A., Bishop, S. G. (1989) New deep acceptor in epitaxial cubic SiC. Applied Physics Letters, 55 (26). 2757-2759 doi:10.1063/1.101946
Darken, L. S., Hyder, S. A. (1983) Photoconductive response of compensating impurities in photothermal ionization spectroscopy of high‐purity silicon and germanium. Applied Physics Letters, 42 (8). 731-733 doi:10.1063/1.94042
Darken, L. S. (1982) Photothermal ionization spectroscopy of acceptors in high purity germanium. Journal of Applied Physics, 53 (5). 3754-3764 doi:10.1063/1.331114
McHugo, S. A., McDonald, R. J., Smith, A. R., Hurley, D. L., Weber, E. R. (1998) Iron solubility in highly boron-doped silicon. Applied Physics Letters, 73 (10). 1424-1426 doi:10.1063/1.121964
Bhar, G. C., Das, S., Chatterjee, U., Vodopyanov, K. L. (1989) Temperature‐tunable second‐harmonic generation in zinc germanium diphosphide. Applied Physics Letters, 54 (4). 313-314 doi:10.1063/1.101449
Huldt, L., Nilsson, N. G., Svantesson, K. G. (1979) The temperature dependence of band‐to‐band Auger recombination in silicon. Applied Physics Letters, 35 (10). 776-777 doi:10.1063/1.90974
 
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