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Sakai, Akira, Tatsumi, Toru, Niino, Taeko, Hirayama, Hiroyuki, Ishida, Koichi (1989) Interface atomic structure of Si/SiO2/Si formed by molecular beam deposition. Applied Physics Letters, 55 (24). 2500-2502 doi:10.1063/1.102298

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Reference TypeJournal (article/letter/editorial)
TitleInterface atomic structure of Si/SiO2/Si formed by molecular beam deposition
JournalApplied Physics Letters
AuthorsSakai, AkiraAuthor
Tatsumi, ToruAuthor
Niino, TaekoAuthor
Hirayama, HiroyukiAuthor
Ishida, KoichiAuthor
Year1989 (December 11)Volume55
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.102298Search in ResearchGate
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Mindat Ref. ID8488857Long-form Identifiermindat:1:5:8488857:2
GUID0
Full ReferenceSakai, Akira, Tatsumi, Toru, Niino, Taeko, Hirayama, Hiroyuki, Ishida, Koichi (1989) Interface atomic structure of Si/SiO2/Si formed by molecular beam deposition. Applied Physics Letters, 55 (24). 2500-2502 doi:10.1063/1.102298
Plain TextSakai, Akira, Tatsumi, Toru, Niino, Taeko, Hirayama, Hiroyuki, Ishida, Koichi (1989) Interface atomic structure of Si/SiO2/Si formed by molecular beam deposition. Applied Physics Letters, 55 (24). 2500-2502 doi:10.1063/1.102298
In(1989, December) Applied Physics Letters Vol. 55 (24) AIP Publishing

See Also

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Tatsumi, Toru, Niino, Taeko, Sakai, Akira, Hirayama, Hiroyuki (1989) Si/SiOx/Si Hole-Barrier Fabrication for Bipolar Transistors Using Molecular Beam Deposition. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1678
Tatsumi, Toru, Niino, Taeko, Hirayama, Hiroyuki (1990) Silicon etching with oxygen molecular beam assisted by predeposited germanium. Applied Physics Letters, 56 (7). 635-637 doi:10.1063/1.102721
Hirayama, Hiroyuki, Tatsumi, Toru (1989) High doping of phosphorus in Si using gas source molecular beam epitaxy. Applied Physics Letters, 55 (2). 131-133 doi:10.1063/1.102122
Sakai, Akira, Tatsumi, Toru, Ishida, Koichi (1993) Prevention of crystallization by surfactants during Si molecular-beam deposition on amorphous-Si films. Physical Review B, 47 (11) 6803-6806 doi:10.1103/physrevb.47.6803
Hirayama, Hiroyuki, Tatsumi, Toru (1989) Hydrogen passivation effect in Si molecular beam epitaxy. Applied Physics Letters, 54 (16). 1561-1563 doi:10.1063/1.101313
Sakai, Akira, Ono, Haruhiko, Ishida, Koichi, Niino, Taeko, Tatsumi, Toru (1991) Crystallization of Amorphous Silicon with Clean Surfaces. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l941
Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1989) Si particle density reduction in Si molecular beam epitaxy using a deflection electrode. Applied Physics Letters, 54 (7). 629-631 doi:10.1063/1.100900
Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1988) Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy. Applied Physics Letters, 52 (11). 895-897 doi:10.1063/1.99265
Sakai, Akira, Tatsumi, Toru, Ishida, Koichi (1989) Direct observation of a 7 × 7 superstructure at the amorphous Si/Si(111) interface by cross-sectional high resolution transmission electron microscopy. Surface Science Letters, 224 (1). doi:10.1016/0167-2584(89)90134-5
Akimoto, Koichi, Hirosawa, Ichiro, Tatsumi, Toru, Hirayama, Hiroyuki, Mizuki, Jun’ichiro, Matsui, Junji (1990) Structure of (√3×√3) R 30°‐B at the Si interface studied by grazing incidence x‐ray diffraction. Applied Physics Letters, 56 (13). 1225-1227 doi:10.1063/1.102522
Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1987) Boron heavy doping for Si molecular beam epitaxy using a HBO2source. Applied Physics Letters, 50 (18). 1234-1236 doi:10.1063/1.97919
 
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