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Hirayama, Hiroyuki, Tatsumi, Toru (1989) Hydrogen passivation effect in Si molecular beam epitaxy. Applied Physics Letters, 54 (16). 1561-1563 doi:10.1063/1.101313

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Reference TypeJournal (article/letter/editorial)
TitleHydrogen passivation effect in Si molecular beam epitaxy
JournalApplied Physics Letters
AuthorsHirayama, HiroyukiAuthor
Tatsumi, ToruAuthor
Year1989 (April 17)Volume54
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.101313Search in ResearchGate
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Mindat Ref. ID8486281Long-form Identifiermindat:1:5:8486281:1
GUID0
Full ReferenceHirayama, Hiroyuki, Tatsumi, Toru (1989) Hydrogen passivation effect in Si molecular beam epitaxy. Applied Physics Letters, 54 (16). 1561-1563 doi:10.1063/1.101313
Plain TextHirayama, Hiroyuki, Tatsumi, Toru (1989) Hydrogen passivation effect in Si molecular beam epitaxy. Applied Physics Letters, 54 (16). 1561-1563 doi:10.1063/1.101313
In(1989, April) Applied Physics Letters Vol. 54 (16) AIP Publishing

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Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1989) Si particle density reduction in Si molecular beam epitaxy using a deflection electrode. Applied Physics Letters, 54 (7). 629-631 doi:10.1063/1.100900
Hirayama, Hiroyuki, Tatsumi, Toru (1989) High doping of phosphorus in Si using gas source molecular beam epitaxy. Applied Physics Letters, 55 (2). 131-133 doi:10.1063/1.102122
Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1988) Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy. Applied Physics Letters, 52 (11). 895-897 doi:10.1063/1.99265
Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1987) Boron heavy doping for Si molecular beam epitaxy using a HBO2source. Applied Physics Letters, 50 (18). 1234-1236 doi:10.1063/1.97919
Hirayama, Hiroyuki, Tatsumi, Toru, Aizaki, Naoaki (1988) Gas source silicon molecular beam epitaxy using disilane. Applied Physics Letters, 52 (18). 1484-1486 doi:10.1063/1.99106
Hirayama, Hiroyuki, Tatsumi, Toru, Aizaki, Naoaki (1988) Stress reduction and doping efficiency in B‐ and Ge‐doped silicon molecular beam epitaxy films. Applied Physics Letters, 52 (16). 1335-1337 doi:10.1063/1.99151
Hirayama, Hiroyuki, Tatsumi, Toru, Aizaki, Naoaki (1988) Selective growth condition in disilane gas source silicon molecular beam epitaxy. Applied Physics Letters, 52 (26). 2242-2243 doi:10.1063/1.99654
Hirayama, Hiroyuki, Tatsumi, Toru, Ogura, Atsushi, Aizaki, Naoaki (1987) Gas source silicon molecular beam epitaxy using silane. Applied Physics Letters, 51 (26). 2213-2215 doi:10.1063/1.99009
Sakai, Akira, Tatsumi, Toru, Niino, Taeko, Hirayama, Hiroyuki, Ishida, Koichi (1989) Interface atomic structure of Si/SiO2/Si formed by molecular beam deposition. Applied Physics Letters, 55 (24). 2500-2502 doi:10.1063/1.102298
Hirayama, Hiroyuki, Sasaoka, Chiaki, Tatsumi, Toru, Ohshita, Yoshio (1989) Triethylgallium adsorption on Si(100) and Si(111) surfaces. Applied Physics Letters, 54 (2). 126-128 doi:10.1063/1.101205
Hirayama, Hiroyuki, Hiroi, Masayuki, Koyama, Kazuhisa, Tatsumi, Toru (1990) Selective heteroepitaxial growth of Si1−xGexusing gas source molecular beam epitaxy. Applied Physics Letters, 56 (12). 1107-1109 doi:10.1063/1.102582
 
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