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Hirayama, Hiroyuki, Sasaoka, Chiaki, Tatsumi, Toru, Ohshita, Yoshio (1989) Triethylgallium adsorption on Si(100) and Si(111) surfaces. Applied Physics Letters, 54 (2). 126-128 doi:10.1063/1.101205

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Reference TypeJournal (article/letter/editorial)
TitleTriethylgallium adsorption on Si(100) and Si(111) surfaces
JournalApplied Physics Letters
AuthorsHirayama, HiroyukiAuthor
Sasaoka, ChiakiAuthor
Tatsumi, ToruAuthor
Ohshita, YoshioAuthor
Year1989 (January 9)Volume54
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.101205Search in ResearchGate
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Mindat Ref. ID8486588Long-form Identifiermindat:1:5:8486588:1
GUID0
Full ReferenceHirayama, Hiroyuki, Sasaoka, Chiaki, Tatsumi, Toru, Ohshita, Yoshio (1989) Triethylgallium adsorption on Si(100) and Si(111) surfaces. Applied Physics Letters, 54 (2). 126-128 doi:10.1063/1.101205
Plain TextHirayama, Hiroyuki, Sasaoka, Chiaki, Tatsumi, Toru, Ohshita, Yoshio (1989) Triethylgallium adsorption on Si(100) and Si(111) surfaces. Applied Physics Letters, 54 (2). 126-128 doi:10.1063/1.101205
In(1989, January) Applied Physics Letters Vol. 54 (2) AIP Publishing

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Hirayama, Hiroyuki, Tatsumi, Toru (1989) Hydrogen passivation effect in Si molecular beam epitaxy. Applied Physics Letters, 54 (16). 1561-1563 doi:10.1063/1.101313
Sasaoka, C., Kato, Y., Usui, A., Hirayama, H., Tatsumi, T. (1990) Insitux‐ray photoelectron spectroscopy and reflection high‐energy electron diffraction study of diethylgalliumchloride adsorption on Si (100) and Si (111) surfaces. Applied Physics Letters, 57 (17). 1733-1735 doi:10.1063/1.104050
Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1989) Si particle density reduction in Si molecular beam epitaxy using a deflection electrode. Applied Physics Letters, 54 (7). 629-631 doi:10.1063/1.100900
Hirayama, Hiroyuki, Tatsumi, Toru (1989) High doping of phosphorus in Si using gas source molecular beam epitaxy. Applied Physics Letters, 55 (2). 131-133 doi:10.1063/1.102122
Hirayama, Hiroyuki, Tatsumi, Toru (1989) Si (111) surface cleaning using atomic hydrogen and SiH2studied using reflection high‐energy electron diffraction. Journal of Applied Physics, 66 (2). 629-633 doi:10.1063/1.343529
Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1988) Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy. Applied Physics Letters, 52 (11). 895-897 doi:10.1063/1.99265
Sakai, Akira, Tatsumi, Toru, Niino, Taeko, Hirayama, Hiroyuki, Ishida, Koichi (1989) Interface atomic structure of Si/SiO2/Si formed by molecular beam deposition. Applied Physics Letters, 55 (24). 2500-2502 doi:10.1063/1.102298
Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1987) Boron heavy doping for Si molecular beam epitaxy using a HBO2source. Applied Physics Letters, 50 (18). 1234-1236 doi:10.1063/1.97919
Tatsumi, Toru, Niino, Taeko, Sakai, Akira, Hirayama, Hiroyuki (1989) Si/SiOx/Si Hole-Barrier Fabrication for Bipolar Transistors Using Molecular Beam Deposition. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1678
Hirayama, Hiroyuki, Tatsumi, Toru, Aizaki, Naoaki (1988) Reflection high energy electron diffraction and Auger electron spectroscopic study on B/Si(111) surfaces. Surface Science, 193 (1). doi:10.1016/0039-6028(88)90316-0
Morita, Yukinori, Ota, Hiroyuki (2012) Simultaneous flattening of Si(110), (111), and (001) surfaces for three-dimensional Si nanowires. Applied Physics Letters, 100 (26). 261605pp. doi:10.1063/1.4731789
 
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