Vote for your favorite mineral in #MinCup25! - Pectolite vs. Haüyne
It's a pair of striking blue beauties as #pectolite the uncrushable faces off against #hauyne, the phoenix from volcanic ashes!
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

McDermott, B. T., Reid, K. G., El‐Masry, N. A., Bedair, S. M., Duncan, W. M., Yin, X., Pollak, Fred H. (1990) Atomic layer epitaxy of GaInP ordered alloy. Applied Physics Letters, 56 (12). 1172-1174 doi:10.1063/1.102553

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleAtomic layer epitaxy of GaInP ordered alloy
JournalApplied Physics Letters
AuthorsMcDermott, B. T.Author
Reid, K. G.Author
El‐Masry, N. A.Author
Bedair, S. M.Author
Duncan, W. M.Author
Yin, X.Author
Pollak, Fred H.Author
Year1990 (March 19)Volume56
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.102553Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8489744Long-form Identifiermindat:1:5:8489744:6
GUID0
Full ReferenceMcDermott, B. T., Reid, K. G., El‐Masry, N. A., Bedair, S. M., Duncan, W. M., Yin, X., Pollak, Fred H. (1990) Atomic layer epitaxy of GaInP ordered alloy. Applied Physics Letters, 56 (12). 1172-1174 doi:10.1063/1.102553
Plain TextMcDermott, B. T., Reid, K. G., El‐Masry, N. A., Bedair, S. M., Duncan, W. M., Yin, X., Pollak, Fred H. (1990) Atomic layer epitaxy of GaInP ordered alloy. Applied Physics Letters, 56 (12). 1172-1174 doi:10.1063/1.102553
In(1990, March) Applied Physics Letters Vol. 56 (12) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

McDermott, B. T., El‐Masry, N. A., Tischler, M. A., Bedair, S. M. (1987) Atomic layer epitaxy of the Ga‐As‐In‐As superalloy. Applied Physics Letters, 51 (22). 1830-1832 doi:10.1063/1.98484
McDermott, B.T., El-Masry, N.A., Jiang, B.L., Hyuga, F., Bedair, S.M., Duncan, W.M. (1991) Ordered GaInP by atomic layer epitaxy. Journal of Crystal Growth, 107 (1). 96-101 doi:10.1016/0022-0248(91)90440-g
Hashemi, M., Ramdani, J., McDermott, B. T., Reid, K., Bedair, S. M. (1990) Atomic layer epitaxy of planar‐doped structures for nonalloyed contacts and field‐effect transistor. Applied Physics Letters, 56 (10). 964-966 doi:10.1063/1.102593
Gong, J. R., Jung, D., El‐Masry, N. A., Bedair, S. M. (1990) Atomic layer epitaxy of AlGaAs. Applied Physics Letters, 57 (4). 400-402 doi:10.1063/1.103675
Bedair, S. M., Tischler, M. A., Katsuyama, T., El‐Masry, N. A. (1985) Atomic layer epitaxy of III‐V binary compounds. Applied Physics Letters, 47 (1). 51-53 doi:10.1063/1.96401
Boutros, K. S., McIntosh, F. G., Roberts, J. C., Bedair, S. M., Piner, E. L., El‐Masry, N. A. (1995) High quality InGaN films by atomic layer epitaxy. Applied Physics Letters, 67 (13). 1856-1858 doi:10.1063/1.114355
Ide, Y., McDermott, B. T., Hashemi, M., Bedair, S. M., Goodhue, W. D. (1988) Sidewall growth by atomic layer epitaxy. Applied Physics Letters, 53 (23). 2314-2316 doi:10.1063/1.100264
Karam, N. H., Parodos, T., Colter, P., McNulty, D., Rowland, W., Schetzina, J., El‐Masry, N., Bedair, Salah M. (1995) Growth of device quality GaN at 550 °C by atomic layer epitaxy. Applied Physics Letters, 67 (1). 94-96 doi:10.1063/1.115519
Katsuyama, T., Tischler, M. A., Karam, N. H., El‐Masry, N., Bedair, S. M. (1987) Molecular stream epitaxy of ultrathin InGaAs/GaAsP superlattices. Applied Physics Letters, 51 (7). 529-531 doi:10.1063/1.98388
Reid, K. G., Urdianyk, H. M., Bedair, S. M. (1991) Role of trimethylgallium exposure time in carbon doping and high temperature atomic layer epitaxy of GaAs. Applied Physics Letters, 59 (19). 2397-2399 doi:10.1063/1.106027
Colter, P. C., Hussien, S. A., Dip, A., Erdoǧan, M. U., Duncan, W. M., Bedair, S. M. (1991) Atomic layer epitaxy of device quality GaAs with a 0.6 μm/h growth rate. Applied Physics Letters, 59 (12). 1440-1442 doi:10.1063/1.105281
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 17, 2025 02:05:54
Go to top of page