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Ide, Y., McDermott, B. T., Hashemi, M., Bedair, S. M., Goodhue, W. D. (1988) Sidewall growth by atomic layer epitaxy. Applied Physics Letters, 53 (23). 2314-2316 doi:10.1063/1.100264

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Reference TypeJournal (article/letter/editorial)
TitleSidewall growth by atomic layer epitaxy
JournalApplied Physics Letters
AuthorsIde, Y.Author
McDermott, B. T.Author
Hashemi, M.Author
Bedair, S. M.Author
Goodhue, W. D.Author
Year1988 (December 5)Volume53
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.100264Search in ResearchGate
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Mindat Ref. ID8485057Long-form Identifiermindat:1:5:8485057:9
GUID0
Full ReferenceIde, Y., McDermott, B. T., Hashemi, M., Bedair, S. M., Goodhue, W. D. (1988) Sidewall growth by atomic layer epitaxy. Applied Physics Letters, 53 (23). 2314-2316 doi:10.1063/1.100264
Plain TextIde, Y., McDermott, B. T., Hashemi, M., Bedair, S. M., Goodhue, W. D. (1988) Sidewall growth by atomic layer epitaxy. Applied Physics Letters, 53 (23). 2314-2316 doi:10.1063/1.100264
In(1988, December) Applied Physics Letters Vol. 53 (23) AIP Publishing

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Hashemi, M., Ramdani, J., McDermott, B. T., Reid, K., Bedair, S. M. (1990) Atomic layer epitaxy of planar‐doped structures for nonalloyed contacts and field‐effect transistor. Applied Physics Letters, 56 (10). 964-966 doi:10.1063/1.102593
Bedair, S.M., McDermott, B.T., Ide, Y., Karam, N.H., Hashemi, H., Tischler, M.A., Timmons, M., Tarn, J.C.L., El-Masry, N. (1988) Recent progress in atomic layer epitaxy of III–V compounds. Journal of Crystal Growth, 93 (1). 182-189 doi:10.1016/0022-0248(88)90525-8
McDermott, B. T., El‐Masry, N. A., Tischler, M. A., Bedair, S. M. (1987) Atomic layer epitaxy of the Ga‐As‐In‐As superalloy. Applied Physics Letters, 51 (22). 1830-1832 doi:10.1063/1.98484
McDermott, B. T., Reid, K. G., El‐Masry, N. A., Bedair, S. M., Duncan, W. M., Yin, X., Pollak, Fred H. (1990) Atomic layer epitaxy of GaInP ordered alloy. Applied Physics Letters, 56 (12). 1172-1174 doi:10.1063/1.102553
Neudeck, P. G., Kleine, J. S., Sheppard, S. T., McDermott, B. T., Bedair, S. M., Cooper, J. A., Melloch, M. R. (1991) Electrical characterization of GaAsPiNjunction diodes grown in trenches by atomic layer epitaxy. Applied Physics Letters, 58 (1). 83-85 doi:10.1063/1.104453
Bedair, S. M., Tischler, M. A., Katsuyama, T., El‐Masry, N. A. (1985) Atomic layer epitaxy of III‐V binary compounds. Applied Physics Letters, 47 (1). 51-53 doi:10.1063/1.96401
Karam, N. H., Liu, H., Yoshida, I., Bedair, S. M. (1988) Direct writing of GaAs monolayers by laser‐assisted atomic layer epitaxy. Applied Physics Letters, 52 (14). 1144-1146 doi:10.1063/1.99186
Tischler, M. A., Bedair, S. M. (1986) Improved uniformity of epitaxial indium‐based compounds by atomic layer epitaxy. Applied Physics Letters, 49 (5). 274-276 doi:10.1063/1.97139
Karam, N. H., Parodos, T., Colter, P., McNulty, D., Rowland, W., Schetzina, J., El‐Masry, N., Bedair, Salah M. (1995) Growth of device quality GaN at 550 °C by atomic layer epitaxy. Applied Physics Letters, 67 (1). 94-96 doi:10.1063/1.115519
Gong, J. R., Jung, D., El‐Masry, N. A., Bedair, S. M. (1990) Atomic layer epitaxy of AlGaAs. Applied Physics Letters, 57 (4). 400-402 doi:10.1063/1.103675
Tischler, M. A., Bedair, S. M. (1986) Self‐limiting mechanism in the atomic layer epitaxy of GaAs. Applied Physics Letters, 48 (24). 1681-1683 doi:10.1063/1.96804
 
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