Suemune, I., Kishimoto, A., Hamaoka, K., Honda, Y., Kan, Y., Yamanishi, M. (1990) Dependence of GaAs etch rate on the angle of incidence of a hydrogen plasma beam excited by electron cyclotron resonance. Applied Physics Letters, 56 (24). 2393-2395 doi:10.1063/1.102926
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Dependence of GaAs etch rate on the angle of incidence of a hydrogen plasma beam excited by electron cyclotron resonance | ||
| Journal | Applied Physics Letters | ||
| Authors | Suemune, I. | Author | |
| Kishimoto, A. | Author | ||
| Hamaoka, K. | Author | ||
| Honda, Y. | Author | ||
| Kan, Y. | Author | ||
| Yamanishi, M. | Author | ||
| Year | 1990 (June 11) | Volume | 56 |
| Issue | 24 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.102926Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8490690 | Long-form Identifier | mindat:1:5:8490690:2 |
| GUID | 0 | ||
| Full Reference | Suemune, I., Kishimoto, A., Hamaoka, K., Honda, Y., Kan, Y., Yamanishi, M. (1990) Dependence of GaAs etch rate on the angle of incidence of a hydrogen plasma beam excited by electron cyclotron resonance. Applied Physics Letters, 56 (24). 2393-2395 doi:10.1063/1.102926 | ||
| Plain Text | Suemune, I., Kishimoto, A., Hamaoka, K., Honda, Y., Kan, Y., Yamanishi, M. (1990) Dependence of GaAs etch rate on the angle of incidence of a hydrogen plasma beam excited by electron cyclotron resonance. Applied Physics Letters, 56 (24). 2393-2395 doi:10.1063/1.102926 | ||
| In | (1990, June) Applied Physics Letters Vol. 56 (24) AIP Publishing | ||
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