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Suemune, I., Kunitsugu, Y., Kan, Y., Yamanishi, M. (1989) Incidence angle effect of a hydrogen plasma beam for the cleaning of semiconductor surfaces. Applied Physics Letters, 55 (8). 760-762 doi:10.1063/1.101798

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Reference TypeJournal (article/letter/editorial)
TitleIncidence angle effect of a hydrogen plasma beam for the cleaning of semiconductor surfaces
JournalApplied Physics Letters
AuthorsSuemune, I.Author
Kunitsugu, Y.Author
Kan, Y.Author
Yamanishi, M.Author
Year1989 (August 21)Volume55
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.101798Search in ResearchGate
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Mindat Ref. ID8489411Long-form Identifiermindat:1:5:8489411:1
GUID0
Full ReferenceSuemune, I., Kunitsugu, Y., Kan, Y., Yamanishi, M. (1989) Incidence angle effect of a hydrogen plasma beam for the cleaning of semiconductor surfaces. Applied Physics Letters, 55 (8). 760-762 doi:10.1063/1.101798
Plain TextSuemune, I., Kunitsugu, Y., Kan, Y., Yamanishi, M. (1989) Incidence angle effect of a hydrogen plasma beam for the cleaning of semiconductor surfaces. Applied Physics Letters, 55 (8). 760-762 doi:10.1063/1.101798
In(1989, August) Applied Physics Letters Vol. 55 (8) AIP Publishing

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Suemune, I., Kunitsugu, Y., Tanaka, Y., Kan, Y., Yamanishi, M. (1988) New low‐temperature process for growth of GaAs on Si with metalorganic molecular beam epitaxy assisted by a hydrogen plasma. Applied Physics Letters, 53 (22). 2173-2175 doi:10.1063/1.100273
Suemune, I., Kishimoto, A., Hamaoka, K., Honda, Y., Kan, Y., Yamanishi, M. (1990) Dependence of GaAs etch rate on the angle of incidence of a hydrogen plasma beam excited by electron cyclotron resonance. Applied Physics Letters, 56 (24). 2393-2395 doi:10.1063/1.102926
Kunitsugu, Y., Suemune, I., Tanaka, Y., Kan, Y., Yamanishi, M. (1989) Low-temperature cleaning of Si and growth of GaAs on Si by hydrogen plasma-assisted metalorganic molecular-beam epitaxy. Journal of Crystal Growth, 95 (1). 91-95 doi:10.1016/0022-0248(89)90358-8
Kan, Y., Yamanishi, M., Okuda, M., Mukaiyama, K., Ohnishi, T., Kawamoto, M., Suemune, I. (1989) Quantum‐confined field‐effect light emitters with high‐speed switching capability. Applied Physics Letters, 55 (12). 1149-1151 doi:10.1063/1.101680
Suemune, I., Yamada, K., Masato, H., Kan, Y., Yamanishi, M. (1989) Lasing in a ZnS0.12Se0.88/ZnSe multilayer structure with photopumping. Applied Physics Letters, 54 (11). 981-983 doi:10.1063/1.100755
Kan, Y., Okuda, M., Yamanishi, M., Ohnishi, T., Mukaiyama, K., Suemune, I. (1990) Room‐temperature operation of three‐terminal quantum‐confined field‐effect light emitters. Applied Physics Letters, 56 (21). 2059-2061 doi:10.1063/1.102992
Kishimoto, Akihiro, Suemune, Ikuo, Hamaoka, Kazuhiko, Koui, Tomoaki, Honda, Yoshiaki, Yamanishi, Masamichi (1990) In-SituRHEED Monitoring of Hydrogen Plasma Cleaning on Semiconductor Surfaces. Japanese Journal of Applied Physics, 29. 2273-2276 doi:10.1143/jjap.29.2273
Suemune, I., Coldren, L. A., Yamanishi, M., Kan, Y. (1988) Extremely wide modulation bandwidth in a low threshold current strained quantum well laser. Applied Physics Letters, 53 (15). 1378-1380 doi:10.1063/1.99984
Yasuhira, N., Suemune, I., Kan, Y., Yamanishi, M. (1990) Selectively doped double‐heterojunction lateral current injection ridge waveguide AlGaAs/GaAs laser. Applied Physics Letters, 56 (15). 1391-1393 doi:10.1063/1.102477
Obata, K., Yamanishi, M., Yamaoka, Y., Kan, Y., Hayashi, J., Suemune, I. (1990) Observation of optical bistability by charge‐induced self‐feedback in biased AlGaAs multiple quantum well structures. Applied Physics Letters, 57 (5). 419-421 doi:10.1063/1.103653
Tanaka, Yoshimitsu, Kunitsugu, Yasuhiro, Suemune, Ikuo, Honda, Yoshiaki, Kan, Yasuo, Yamanishi, Masamichi (1988) Low‐temperature GaAs epitaxial growth using electron‐cyclotron resonance/metalorganic‐molecular‐beam epitaxy. Journal of Applied Physics, 64 (5). 2778-2780 doi:10.1063/1.341600
 
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