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Suemune, I., Coldren, L. A., Yamanishi, M., Kan, Y. (1988) Extremely wide modulation bandwidth in a low threshold current strained quantum well laser. Applied Physics Letters, 53 (15). 1378-1380 doi:10.1063/1.99984

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Reference TypeJournal (article/letter/editorial)
TitleExtremely wide modulation bandwidth in a low threshold current strained quantum well laser
JournalApplied Physics Letters
AuthorsSuemune, I.Author
Coldren, L. A.Author
Yamanishi, M.Author
Kan, Y.Author
Year1988 (October 10)Volume53
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.99984Search in ResearchGate
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Mindat Ref. ID8484418Long-form Identifiermindat:1:5:8484418:9
GUID0
Full ReferenceSuemune, I., Coldren, L. A., Yamanishi, M., Kan, Y. (1988) Extremely wide modulation bandwidth in a low threshold current strained quantum well laser. Applied Physics Letters, 53 (15). 1378-1380 doi:10.1063/1.99984
Plain TextSuemune, I., Coldren, L. A., Yamanishi, M., Kan, Y. (1988) Extremely wide modulation bandwidth in a low threshold current strained quantum well laser. Applied Physics Letters, 53 (15). 1378-1380 doi:10.1063/1.99984
In(1988, October) Applied Physics Letters Vol. 53 (15) AIP Publishing

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Nakanishi, K., Suemune, I., Fujii, Y., Kuroda, Y., Yamanishi, M. (1991) Extremely‐low‐threshold and high‐temperature operation in a photopumped ZnSe/ZnSSe blue laser. Applied Physics Letters, 59 (12). 1401-1403 doi:10.1063/1.105319
Yasuhira, N., Suemune, I., Kan, Y., Yamanishi, M. (1990) Selectively doped double‐heterojunction lateral current injection ridge waveguide AlGaAs/GaAs laser. Applied Physics Letters, 56 (15). 1391-1393 doi:10.1063/1.102477
Suemune, I., Kunitsugu, Y., Tanaka, Y., Kan, Y., Yamanishi, M. (1988) New low‐temperature process for growth of GaAs on Si with metalorganic molecular beam epitaxy assisted by a hydrogen plasma. Applied Physics Letters, 53 (22). 2173-2175 doi:10.1063/1.100273
Obata, K., Yamanishi, M., Yamaoka, Y., Kan, Y., Hayashi, J., Suemune, I. (1990) Observation of optical bistability by charge‐induced self‐feedback in biased AlGaAs multiple quantum well structures. Applied Physics Letters, 57 (5). 419-421 doi:10.1063/1.103653
Choi, H. K., Wang, C. A. (1990) InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency. Applied Physics Letters, 57 (4). 321-323 doi:10.1063/1.103678
Suemune, I., Yamada, K., Masato, H., Kan, Y., Yamanishi, M. (1989) Lasing in a ZnS0.12Se0.88/ZnSe multilayer structure with photopumping. Applied Physics Letters, 54 (11). 981-983 doi:10.1063/1.100755
Morton, P. A., Temkin, H., Coblentz, D. L., Logan, R. A., Tanbun‐Ek, T. (1992) Enhanced modulation bandwidth of strained multiple quantum well lasers. Applied Physics Letters, 60 (15). 1812-1814 doi:10.1063/1.107172
Honda, Y., Suemune, I., Yamanishi, M. (1991) Monolithic integration of a new optoelectronic device based on a modulation‐doped heterostructure. Applied Physics Letters, 59 (6). 621-623 doi:10.1063/1.105403
Kan, Y., Okuda, M., Yamanishi, M., Ohnishi, T., Mukaiyama, K., Suemune, I. (1990) Room‐temperature operation of three‐terminal quantum‐confined field‐effect light emitters. Applied Physics Letters, 56 (21). 2059-2061 doi:10.1063/1.102992
Suemune, I., Kunitsugu, Y., Kan, Y., Yamanishi, M. (1989) Incidence angle effect of a hydrogen plasma beam for the cleaning of semiconductor surfaces. Applied Physics Letters, 55 (8). 760-762 doi:10.1063/1.101798
Lau, K. Y., Xin, S., Wang, W. I., Bar‐Chaim, N., Mittelstein, M. (1989) Enhancement of modulation bandwidth in InGaAs strained‐layer single quantum well lasers. Applied Physics Letters, 55 (12). 1173-1175 doi:10.1063/1.101688
 
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