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Miller, W. R., Stillman, G. E. (1990) Surface Fermi‐level changes inn‐type GaAs determined from Hall‐effect measurements. Applied Physics Letters, 57 (27). 2934-2936 doi:10.1063/1.103735

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Reference TypeJournal (article/letter/editorial)
TitleSurface Fermi‐level changes inn‐type GaAs determined from Hall‐effect measurements
JournalApplied Physics Letters
AuthorsMiller, W. R.Author
Stillman, G. E.Author
Year1990 (December 31)Volume57
Issue27
PublisherAIP Publishing
DOIdoi:10.1063/1.103735Search in ResearchGate
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Mindat Ref. ID8492738Long-form Identifiermindat:1:5:8492738:5
GUID0
Full ReferenceMiller, W. R., Stillman, G. E. (1990) Surface Fermi‐level changes inn‐type GaAs determined from Hall‐effect measurements. Applied Physics Letters, 57 (27). 2934-2936 doi:10.1063/1.103735
Plain TextMiller, W. R., Stillman, G. E. (1990) Surface Fermi‐level changes inn‐type GaAs determined from Hall‐effect measurements. Applied Physics Letters, 57 (27). 2934-2936 doi:10.1063/1.103735
In(1990, December) Applied Physics Letters Vol. 57 (27) AIP Publishing

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Miller, W. R., Stillman, G. E. (1991) Hall‐effect measurement and a defect model analysis of surface‐potential changes in GaAs. Journal of Applied Physics, 70 (12). 7635-7637 doi:10.1063/1.350364
Miller, W. R., Stillman, G. E. (1992) Surface‐interface states and a model for surface effects in semi‐insulating bulk GaAs. Applied Physics Letters, 60 (10). 1247-1249 doi:10.1063/1.107420
Kisting, S. R., Bohn, P. W., Andideh, E., Adesida, I., Cunningham, B. T., Stillman, G. E., Harris, T. D. (1990) High precision temperature‐ and energy‐dependent refractive index of GaAs determined from excitation of optical waveguide eigenmodes. Applied Physics Letters, 57 (13). 1328-1330 doi:10.1063/1.103473
Shen, H., Dutta, M., Fotiadis, L., Newman, P. G., Moerkirk, R. P., Chang, W. H., Sacks, R. N. (1990) Photoreflectance study of surface Fermi level in GaAs and GaAlAs. Applied Physics Letters, 57 (20). 2118-2120 doi:10.1063/1.103916
Look, D. C., Stutz, C. E., Evans, K. R. (1990) Unpinning of GaAs surface Fermi level by 200 °C molecular beam epitaxial layer. Applied Physics Letters, 57 (24). 2570-2572 doi:10.1063/1.104110
Wolfe, C. M., Stillman, G. E., Dimmock, J. O. (1970) Ionized Impurity Density inn‐Type GaAs. Journal of Applied Physics, 41 (2). 504-507 doi:10.1063/1.1658704
Deneuville, A., Lindauer, G., Tanner, D. B., Park, R. M., Holloway, P. H. (1990) Infrared absorption inn‐type ZnSe/GaAs heteroepitaxial films. Applied Physics Letters, 57 (23). 2458-2460 doi:10.1063/1.103850
Szafranek, I., Major, J. S., Cunningham, B. T., Guido, L. J., Holonyak, N., Stillman, G. E. (1990) Instability of partially disordered carbon‐doped AlGaAs/GaAs superlattices. Applied Physics Letters, 57 (27). 2910-2912 doi:10.1063/1.103750
Cook, L. W., Bulman, G. E., Stillman, G. E. (1982) Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements. Applied Physics Letters, 40 (7). 589-591 doi:10.1063/1.93190
Khanal, D. R., Walukiewicz, W., Grandal, J., Calleja, E., Wu, J. (2009) Determining surface Fermi level pinning position of InN nanowires using electrolyte gating. Applied Physics Letters, 95 (17). 173114pp. doi:10.1063/1.3255010
Deal, Michael D., Robinson, Heyward G. (1989) Diffusion of implanted beryllium inn‐ andp‐type GaAs. Applied Physics Letters, 55 (19). 1990-1992 doi:10.1063/1.102142
 
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