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Szafranek, I., Major, J. S., Cunningham, B. T., Guido, L. J., Holonyak, N., Stillman, G. E. (1990) Instability of partially disordered carbon‐doped AlGaAs/GaAs superlattices. Applied Physics Letters, 57 (27). 2910-2912 doi:10.1063/1.103750

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Reference TypeJournal (article/letter/editorial)
TitleInstability of partially disordered carbon‐doped AlGaAs/GaAs superlattices
JournalApplied Physics Letters
AuthorsSzafranek, I.Author
Major, J. S.Author
Cunningham, B. T.Author
Guido, L. J.Author
Holonyak, N.Author
Stillman, G. E.Author
Year1990 (December 31)Volume57
Issue27
PublisherAIP Publishing
DOIdoi:10.1063/1.103750Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8492757Long-form Identifiermindat:1:5:8492757:0
GUID0
Full ReferenceSzafranek, I., Major, J. S., Cunningham, B. T., Guido, L. J., Holonyak, N., Stillman, G. E. (1990) Instability of partially disordered carbon‐doped AlGaAs/GaAs superlattices. Applied Physics Letters, 57 (27). 2910-2912 doi:10.1063/1.103750
Plain TextSzafranek, I., Major, J. S., Cunningham, B. T., Guido, L. J., Holonyak, N., Stillman, G. E. (1990) Instability of partially disordered carbon‐doped AlGaAs/GaAs superlattices. Applied Physics Letters, 57 (27). 2910-2912 doi:10.1063/1.103750
In(1990, December) Applied Physics Letters Vol. 57 (27) AIP Publishing

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Szafranek, I., Szafranek, M., Cunningham, B. T., Guido, L. J., Holonyak, N., Stillman, G. E. (1990) Layer intermixing in heavily carbon‐doped AlGaAs/GaAs superlattices. Journal of Applied Physics, 68 (11). 5615-5620 doi:10.1063/1.346973
Cunningham, B. T., Guido, L. J., Baker, J. E., Major, J. S., Holonyak, N., Stillman, G. E. (1989) Carbon diffusion in undoped,n‐type, andp‐type GaAs. Applied Physics Letters, 55 (7). 687-689 doi:10.1063/1.101822
Guido, L. J., Major, J. S., Baker, J. E., Holonyak, N., Cunningham, B. T., Stillman, G. E. (1990) Column III‐column V sublattice interaction via Zn and Si impurity‐induced layer disordering of13C‐doped AlxGa1−xAs‐GaAs superlattices. Applied Physics Letters, 56 (6). 572-574 doi:10.1063/1.102748
Guido, L. J., Cunningham, B. T., Nam, D. W., Hsieh, K. C., Plano, W. E., Major, J. S., Vesely, E. J., Sugg, A. R., Holonyak, N., Stillman, G. E. (1990) Al‐Ga interdiffusion in heavily carbon‐doped AlxGa1−xAs‐GaAs quantum well heterostructures. Journal of Applied Physics, 67 (4). 2179-2182 doi:10.1063/1.345560
Cunningham, B. T., Stillman, G. E., Jackson, G. S. (1990) Carbon‐doped base GaAs/AlGaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition using carbon tetrachloride as a dopant source. Applied Physics Letters, 56 (4). 361-363 doi:10.1063/1.102785
Dallesasse, J. M., Szafranek, I., Baillargeon, J. N., El‐Zein, N., Holonyak, N., Stillman, G. E., Cheng, K. Y. (1990) Hydrogenation of Si‐ and Be‐doped InGaP. Journal of Applied Physics, 68 (11). 5866-5870 doi:10.1063/1.346961
Major, J. S., Dallesasse, J. M., Guido, L. J., Baker, J. E., Plano, W. E., Sugg, A. R., Vesely, E. J., Richard, T. A., Holonyak, N. (1990) Layer disordering ofn‐type (Se) andp‐type (C) AlxGa1−xAs‐GaAs superlattices by S diffusion. Applied Physics Letters, 56 (18). 1720-1722 doi:10.1063/1.103126
Guido, L. J., Jackson, G. S., Hall, D. C., Plano, W. E., Holonyak, N. (1988) Carbon‐doped AlxGa1−xAs‐GaAs quantum well lasers. Applied Physics Letters, 52 (7). 522-524 doi:10.1063/1.99403
Cunningham, B. T., Baker, J. E., Stillman, G. E. (1990) Carbon tetrachloride doped AlxGa1−xAs grown by metalorganic chemical vapor deposition. Applied Physics Letters, 56 (9). 836-838 doi:10.1063/1.103321
Chiu, T. H., Cunningham, J. E., Ditzenberger, J. A., Jan, W. Y. (1990) Chemical beam epitaxial growth of strained carbon‐doped GaAs. Applied Physics Letters, 57 (2). 171-173 doi:10.1063/1.103974
Cunningham, B. T., Baker, J. E., Stockman, S. A., Stillman, G. E. (1990) Absence of13C incorporation in13CCl4‐doped InP grown by metalorganic chemical vapor deposition. Applied Physics Letters, 56 (18). 1760-1762 doi:10.1063/1.103092
 
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