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Guido, L. J., Jackson, G. S., Hall, D. C., Plano, W. E., Holonyak, N. (1988) Carbon‐doped AlxGa1−xAs‐GaAs quantum well lasers. Applied Physics Letters, 52 (7). 522-524 doi:10.1063/1.99403

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Reference TypeJournal (article/letter/editorial)
TitleCarbon‐doped AlxGa1−xAs‐GaAs quantum well lasers
JournalApplied Physics Letters
AuthorsGuido, L. J.Author
Jackson, G. S.Author
Hall, D. C.Author
Plano, W. E.Author
Holonyak, N.Author
Year1988 (February 15)Volume52
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.99403Search in ResearchGate
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Mindat Ref. ID8483786Long-form Identifiermindat:1:5:8483786:0
GUID0
Full ReferenceGuido, L. J., Jackson, G. S., Hall, D. C., Plano, W. E., Holonyak, N. (1988) Carbon‐doped AlxGa1−xAs‐GaAs quantum well lasers. Applied Physics Letters, 52 (7). 522-524 doi:10.1063/1.99403
Plain TextGuido, L. J., Jackson, G. S., Hall, D. C., Plano, W. E., Holonyak, N. (1988) Carbon‐doped AlxGa1−xAs‐GaAs quantum well lasers. Applied Physics Letters, 52 (7). 522-524 doi:10.1063/1.99403
In(1988, February) Applied Physics Letters Vol. 52 (7) AIP Publishing

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Deppe, D. G., Plano, W. E., Dallesasse, J. M., Hall, D. C., Guido, L. J., Holonyak, N. (1988) Buried heterostructure AlxGa1−xAs‐GaAs quantum well lasers by Ge diffusion from the vapor. Applied Physics Letters, 52 (10). 825-827 doi:10.1063/1.99296
Guido, L. J., Plano, W. E., Jackson, G. S., Holonyak, N., Burnham, R. D., Epler, J. E. (1987) Coupled‐stripe AlxGa1−xAs‐GaAs quantum well lasers defined by vacancy‐enhanced impurity‐induced layer disordering from (Si2)y(GaAs)1−ybarriers. Applied Physics Letters, 50 (12). 757-759 doi:10.1063/1.98036
Jackson, G. S., Hall, D. C., Guido, L. J., Plano, W. E., Pan, N., Holonyak, N., Stillman, G. E. (1988) High‐power gain‐guided coupled‐stripe quantum well laser array by hydrogenation. Applied Physics Letters, 52 (9). 691-693 doi:10.1063/1.99349
Guido, L. J., Jackson, G. S., Plano, W. E., Hsieh, K. C., Holonyak, N., Burnham, R. D., Epler, J. E., Thornton, R. L., Paoli, T. L. (1987) Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−ysource. Applied Physics Letters, 50 (10). 609-611 doi:10.1063/1.98096
Guido, L. J., Cunningham, B. T., Nam, D. W., Hsieh, K. C., Plano, W. E., Major, J. S., Vesely, E. J., Sugg, A. R., Holonyak, N., Stillman, G. E. (1990) Al‐Ga interdiffusion in heavily carbon‐doped AlxGa1−xAs‐GaAs quantum well heterostructures. Journal of Applied Physics, 67 (4). 2179-2182 doi:10.1063/1.345560
Jackson, G. S., Holonyak, N., Hall, D. C., Epler, J. E., Burnham, R. D., Paoli, T. L. (1987) Supermode behavior of coupled two‐stripe AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers. Journal of Applied Physics, 62 (2). 381-385 doi:10.1063/1.339808
Deppe, D. G., Jackson, G. S., Holonyak, N., Hall, D. C., Burnham, R. D., Thornton, R. L., Epler, J. E., Paoli, T. L. (1986) Single‐mode single‐lobe operation of broad area AlxGa1−xAs‐GaAs quantum well lasers. Applied Physics Letters, 49 (14). 883-885 doi:10.1063/1.97524
Deppe, D. G., Hall, D. C., Holonyak, N., Matyi, R. J., Shichijo, H., Epler, J. E. (1988) Effects of microcracking on AlxGa1−xAs‐GaAs quantum well lasers grown on Si. Applied Physics Letters, 53 (10). 874-876 doi:10.1063/1.100100
Jackson, G. S., Hall, D. C., Holonyak, N., Hsieh, K. C., Epler, J. E., Paoli, T. L. (1987) Anomalous threshold current and time delays in index‐guided AlxGa1−xAs‐GaAs quantum‐well lasers. Journal of Applied Physics, 62 (11). 4356-4362 doi:10.1063/1.339068
Jackson, G. S., Deppe, D. G., Hsieh, K. C., Holonyak, N., Hall, D. C., Burnham, R. D., Thornton, R. L., Paoli, T. L. (1986) Reduced temperature sensitivity AlxGa1−xAs‐GaAs quantum well lasers with (Si2)x(GaAs)1−x‘‘barriers’’. Applied Physics Letters, 48 (17). 1156-1158 doi:10.1063/1.96455
Jackson, G. S., Pan, N., Feng, M. S., Stillman, G. E., Holonyak, N., Burnham, R. D. (1987) Stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers via hydrogenation. Applied Physics Letters, 51 (20). 1629-1631 doi:10.1063/1.98577
 
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