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Jackson, G. S., Hall, D. C., Guido, L. J., Plano, W. E., Pan, N., Holonyak, N., Stillman, G. E. (1988) High‐power gain‐guided coupled‐stripe quantum well laser array by hydrogenation. Applied Physics Letters, 52 (9). 691-693 doi:10.1063/1.99349

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Reference TypeJournal (article/letter/editorial)
TitleHigh‐power gain‐guided coupled‐stripe quantum well laser array by hydrogenation
JournalApplied Physics Letters
AuthorsJackson, G. S.Author
Hall, D. C.Author
Guido, L. J.Author
Plano, W. E.Author
Pan, N.Author
Holonyak, N.Author
Stillman, G. E.Author
Year1988 (February 29)Volume52
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.99349Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8483908Long-form Identifiermindat:1:5:8483908:0
GUID0
Full ReferenceJackson, G. S., Hall, D. C., Guido, L. J., Plano, W. E., Pan, N., Holonyak, N., Stillman, G. E. (1988) High‐power gain‐guided coupled‐stripe quantum well laser array by hydrogenation. Applied Physics Letters, 52 (9). 691-693 doi:10.1063/1.99349
Plain TextJackson, G. S., Hall, D. C., Guido, L. J., Plano, W. E., Pan, N., Holonyak, N., Stillman, G. E. (1988) High‐power gain‐guided coupled‐stripe quantum well laser array by hydrogenation. Applied Physics Letters, 52 (9). 691-693 doi:10.1063/1.99349
In(1988, February) Applied Physics Letters Vol. 52 (9) AIP Publishing

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Guido, L. J., Jackson, G. S., Hall, D. C., Plano, W. E., Holonyak, N. (1988) Carbon‐doped AlxGa1−xAs‐GaAs quantum well lasers. Applied Physics Letters, 52 (7). 522-524 doi:10.1063/1.99403
Jackson, G. S., Pan, N., Feng, M. S., Stillman, G. E., Holonyak, N., Burnham, R. D. (1987) Stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers via hydrogenation. Applied Physics Letters, 51 (20). 1629-1631 doi:10.1063/1.98577
Deppe, D. G., Plano, W. E., Dallesasse, J. M., Hall, D. C., Guido, L. J., Holonyak, N. (1988) Buried heterostructure AlxGa1−xAs‐GaAs quantum well lasers by Ge diffusion from the vapor. Applied Physics Letters, 52 (10). 825-827 doi:10.1063/1.99296
Guido, L. J., Plano, W. E., Jackson, G. S., Holonyak, N., Burnham, R. D., Epler, J. E. (1987) Coupled‐stripe AlxGa1−xAs‐GaAs quantum well lasers defined by vacancy‐enhanced impurity‐induced layer disordering from (Si2)y(GaAs)1−ybarriers. Applied Physics Letters, 50 (12). 757-759 doi:10.1063/1.98036
Major, J. S., Hall, D. C., Guido, L. J., Holonyak, N., Gavrilovic, P., Meehan, K., Williams, J. E., Stutius, W. (1989) High‐power disorder‐defined coupled stripe AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure lasers. Applied Physics Letters, 55 (3). 271-273 doi:10.1063/1.101926
Epler, J. E., Jackson, G. S., Holonyak, N., Thornton, R. L., Burnham, R. D., Paoli, T. L. (1985) Broadband operation of coupled‐stripe multiple quantum well AlGaAs laser diodes. Applied Physics Letters, 47 (8). 779-780 doi:10.1063/1.96035
Guido, L. J., Jackson, G. S., Plano, W. E., Hsieh, K. C., Holonyak, N., Burnham, R. D., Epler, J. E., Thornton, R. L., Paoli, T. L. (1987) Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−ysource. Applied Physics Letters, 50 (10). 609-611 doi:10.1063/1.98096
Jackson, G. S., Holonyak, N., Hall, D. C., Epler, J. E., Burnham, R. D., Paoli, T. L. (1987) Supermode behavior of coupled two‐stripe AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers. Journal of Applied Physics, 62 (2). 381-385 doi:10.1063/1.339808
Plano, M. A., Plano, W. E., Haase, M. A., Bose, S. S., Holonyak, N., Stillman, G. E. (1988) Generation of an anomalous hole trap in GaAs by As overpressure annealing. Applied Physics Letters, 52 (13). 1077-1079 doi:10.1063/1.99216
Deppe, D. G., Jackson, G. S., Holonyak, N., Hall, D. C., Burnham, R. D., Thornton, R. L., Epler, J. E., Paoli, T. L. (1987) Impurity‐induced layer‐disordered buried heterostructure AlxGa1−xAs‐GaAs quantum well edge‐injection laser array. Applied Physics Letters, 50 (7). 392-394 doi:10.1063/1.98209
Major, J. S., Plano, W. E., Sugg, A. R., Hall, D. C., Holonyak, N., Hsieh, K. C. (1990) Hydrogenated multiple stripe high‐power long‐wavelength (1.06 μm) continuous (10–50 °C) AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure lasers. Applied Physics Letters, 56 (2). 105-107 doi:10.1063/1.103194
 
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