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Plano, M. A., Plano, W. E., Haase, M. A., Bose, S. S., Holonyak, N., Stillman, G. E. (1988) Generation of an anomalous hole trap in GaAs by As overpressure annealing. Applied Physics Letters, 52 (13). 1077-1079 doi:10.1063/1.99216

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Reference TypeJournal (article/letter/editorial)
TitleGeneration of an anomalous hole trap in GaAs by As overpressure annealing
JournalApplied Physics Letters
AuthorsPlano, M. A.Author
Plano, W. E.Author
Haase, M. A.Author
Bose, S. S.Author
Holonyak, N.Author
Stillman, G. E.Author
Year1988 (March 28)Volume52
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.99216Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482632Long-form Identifiermindat:1:5:8482632:3
GUID0
Full ReferencePlano, M. A., Plano, W. E., Haase, M. A., Bose, S. S., Holonyak, N., Stillman, G. E. (1988) Generation of an anomalous hole trap in GaAs by As overpressure annealing. Applied Physics Letters, 52 (13). 1077-1079 doi:10.1063/1.99216
Plain TextPlano, M. A., Plano, W. E., Haase, M. A., Bose, S. S., Holonyak, N., Stillman, G. E. (1988) Generation of an anomalous hole trap in GaAs by As overpressure annealing. Applied Physics Letters, 52 (13). 1077-1079 doi:10.1063/1.99216
In(1988, March) Applied Physics Letters Vol. 52 (13) AIP Publishing

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Jackson, G. S., Hall, D. C., Guido, L. J., Plano, W. E., Pan, N., Holonyak, N., Stillman, G. E. (1988) High‐power gain‐guided coupled‐stripe quantum well laser array by hydrogenation. Applied Physics Letters, 52 (9). 691-693 doi:10.1063/1.99349
Guido, L. J., Jackson, G. S., Hall, D. C., Plano, W. E., Holonyak, N. (1988) Carbon‐doped AlxGa1−xAs‐GaAs quantum well lasers. Applied Physics Letters, 52 (7). 522-524 doi:10.1063/1.99403
Kim, M. H., Plano, M. A., Haase, M. A., Stillman, G. E., Wang, W. I. (1991) Photo‐Hall studies of high‐purity GaAs. Journal of Applied Physics, 70 (12). 7425-7433 doi:10.1063/1.349738
Deppe, D. G., Holonyak, N., Hsieh, K. C., Nam, D. W., Plano, W. E., Matyi, R. J., Shichijo, H. (1988) Dislocation reduction by impurity diffusion in epitaxial GaAs grown on Si. Applied Physics Letters, 52 (21). 1812-1814 doi:10.1063/1.99633
Deppe, D. G., Plano, W. E., Dallesasse, J. M., Hall, D. C., Guido, L. J., Holonyak, N. (1988) Buried heterostructure AlxGa1−xAs‐GaAs quantum well lasers by Ge diffusion from the vapor. Applied Physics Letters, 52 (10). 825-827 doi:10.1063/1.99296
Plano, W. E., Nam, D. W., Major, J. S., Hsieh, K. C., Holonyak, N. (1988) Column III and V ordering in InGaAsP and GaAsP grown on GaAs by metalorganic chemical vapor deposition. Applied Physics Letters, 53 (25). 2537-2539 doi:10.1063/1.100201
Deppe, D. G., Holonyak, N., Plano, W. E., Robbins, V. M., Dallesasse, J. M., Hsieh, K. C., Baker, J. E. (1988) Impurity diffusion and layer interdiffusion in AlxGa1−xAs‐GaAs heterostructures. Journal of Applied Physics, 64 (4). 1838-1844 doi:10.1063/1.341759
Guido, L. J., Cunningham, B. T., Nam, D. W., Hsieh, K. C., Plano, W. E., Major, J. S., Vesely, E. J., Sugg, A. R., Holonyak, N., Stillman, G. E. (1990) Al‐Ga interdiffusion in heavily carbon‐doped AlxGa1−xAs‐GaAs quantum well heterostructures. Journal of Applied Physics, 67 (4). 2179-2182 doi:10.1063/1.345560
Major, J. S., Dallesasse, J. M., Guido, L. J., Baker, J. E., Plano, W. E., Sugg, A. R., Vesely, E. J., Richard, T. A., Holonyak, N. (1990) Layer disordering ofn‐type (Se) andp‐type (C) AlxGa1−xAs‐GaAs superlattices by S diffusion. Applied Physics Letters, 56 (18). 1720-1722 doi:10.1063/1.103126
Deppe, D. G., Plano, W. E., Baker, J. E., Holonyak, N., Ludowise, M. J., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G. (1988) Comparison of SiIII‐SiVand SiIII‐VIIIdiffusion models in III‐V heterostructures lattice matched to GaAs. Applied Physics Letters, 53 (22). 2211-2213 doi:10.1063/1.100284
Hsieh, K. C., Feng, M. S., Stillman, G. E., Holonyak, N., Ito, C. R., Feng, M. (1989) Hydrogenation and subsequent hydrogen annealing of GaAs on Si. Applied Physics Letters, 54 (4). 341-343 doi:10.1063/1.100963
 
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