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Holland, O. W., Budai, J. D., White, C. W. (1990) Uniaxial lattice expansion of self‐ion‐implanted Si. Applied Physics Letters, 57 (3). 243-245 doi:10.1063/1.103703

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Reference TypeJournal (article/letter/editorial)
TitleUniaxial lattice expansion of self‐ion‐implanted Si
JournalApplied Physics Letters
AuthorsHolland, O. W.Author
Budai, J. D.Author
White, C. W.Author
Year1990 (July 16)Volume57
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.103703Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8492793Long-form Identifiermindat:1:5:8492793:2
GUID0
Full ReferenceHolland, O. W., Budai, J. D., White, C. W. (1990) Uniaxial lattice expansion of self‐ion‐implanted Si. Applied Physics Letters, 57 (3). 243-245 doi:10.1063/1.103703
Plain TextHolland, O. W., Budai, J. D., White, C. W. (1990) Uniaxial lattice expansion of self‐ion‐implanted Si. Applied Physics Letters, 57 (3). 243-245 doi:10.1063/1.103703
In(1990, July) Applied Physics Letters Vol. 57 (3) AIP Publishing

See Also

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Holland, O. W., White, C. W., El‐Ghor, M. K., Budai, J. D. (1990) MeV, self‐ion implantation in Si at liquid nitrogen temperature; a study of damage morphology and its anomalous annealing behavior. Journal of Applied Physics, 68 (5). 2081-2086 doi:10.1063/1.346561
Holland, O. W., El‐Ghor, M. K., White, C. W. (1988) Damage nucleation and annealing in MeV ion‐implanted Si. Applied Physics Letters, 53 (14). 1282-1284 doi:10.1063/1.99998
Motooka, T., Holland, O. W. (1991) Amorphization processes in self‐ion‐implanted Si: Dose dependence. Applied Physics Letters, 58 (21). 2360-2362 doi:10.1063/1.104871
Holland, O. W., White, C. W., Fathy, D. (1987) Novel oxidation process in Ge+‐implanted Si and its effect on oxidation kinetics. Applied Physics Letters, 51 (7). 520-522 doi:10.1063/1.98385
Motooka, T., Holland, O. W. (1992) Amorphization processes in ion implanted Si: Ion species effects. Applied Physics Letters, 61 (25). 3005-3007 doi:10.1063/1.108017
Narayan, J., Holland, O. W., White, C. W., Young, R. T. (1984) Excimer laser annealing of ion‐implanted silicon. Journal of Applied Physics, 55 (4). 1125-1130 doi:10.1063/1.333204
Holland, O. W., Fathy, D. (1988) Annealing of Sb+‐ion‐implanted Si. Journal of Applied Physics, 63 (11). 5326-5330 doi:10.1063/1.340397
Zhou, D. S., Holland, O. W., Budai, J. D. (1993) Strain relief mechanism for damage growth during high‐dose, O+implantation of Si. Applied Physics Letters, 63 (26). 3580-3582 doi:10.1063/1.110103
Holland, O. W. (1989) New mechanism for diffusion of ion‐implanted boron in Si at high concentration. Applied Physics Letters, 54 (9). 798-800 doi:10.1063/1.100850
Klimov, V. I., Schwarz, Ch. J., McBranch, D. W., White, C. W. (1998) Initial carrier relaxation dynamics in ion-implanted Si nanocrystals: Femtosecond transient absorption study. Applied Physics Letters, 73 (18). 2603-2605 doi:10.1063/1.122519
Narayan, J., Holland, O. W. (1982) Formation of metastable supersaturated solid solutions in ion implanted silicon during solid phase crystallization. Applied Physics Letters, 41 (3). 239-242 doi:10.1063/1.93480
 
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