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Motooka, T., Holland, O. W. (1991) Amorphization processes in self‐ion‐implanted Si: Dose dependence. Applied Physics Letters, 58 (21). 2360-2362 doi:10.1063/1.104871

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Reference TypeJournal (article/letter/editorial)
TitleAmorphization processes in self‐ion‐implanted Si: Dose dependence
JournalApplied Physics Letters
AuthorsMotooka, T.Author
Holland, O. W.Author
Year1991 (May 27)Volume58
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.104871Search in ResearchGate
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Mindat Ref. ID8494310Long-form Identifiermindat:1:5:8494310:7
GUID0
Full ReferenceMotooka, T., Holland, O. W. (1991) Amorphization processes in self‐ion‐implanted Si: Dose dependence. Applied Physics Letters, 58 (21). 2360-2362 doi:10.1063/1.104871
Plain TextMotooka, T., Holland, O. W. (1991) Amorphization processes in self‐ion‐implanted Si: Dose dependence. Applied Physics Letters, 58 (21). 2360-2362 doi:10.1063/1.104871
In(1991, May) Applied Physics Letters Vol. 58 (21) AIP Publishing

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Motooka, T., Holland, O. W. (1992) Amorphization processes in ion implanted Si: Ion species effects. Applied Physics Letters, 61 (25). 3005-3007 doi:10.1063/1.108017
Haynes, T. E., Holland, O. W. (1991) Dose rate effects on damage accumulation in Si+‐implanted gallium arsenide. Applied Physics Letters, 58 (1). 62-64 doi:10.1063/1.104445
Motooka, Teruaki, Kobayashi, Fumihiko, Fons, Paul, Tokuyama, Takashi, Suzuki, Tadashi, Natsuaki, Nobuyoshi (1991) Amorphization Processes in Ion Implanted Si: Temperature Dependence. Japanese Journal of Applied Physics, 30. 3617-3620 doi:10.1143/jjap.30.3617
Desnica, U. V., Wagner, J., Haynes, T. E., Holland, O. W. (1992) Raman and ion channeling analysis of damage in ion‐implanted GaAs: Dependence on ion dose and dose rate. Journal of Applied Physics, 71 (6). 2591-2595 doi:10.1063/1.351077
Holland, O. W., Budai, J. D., White, C. W. (1990) Uniaxial lattice expansion of self‐ion‐implanted Si. Applied Physics Letters, 57 (3). 243-245 doi:10.1063/1.103703
Motooka, Teruaki (1994) Model for amorphization processes in ion-implanted Si. Physical Review B, 49 (23) 16367-16371 doi:10.1103/physrevb.49.16367
Watanabe, K., Motooka, T., Hashimoto, N., Tokuyama, T. (1980) Ellipsometric study of annealing processes of phosphorus‐ion‐implanted layers of Si. Applied Physics Letters, 36 (6). 451-453 doi:10.1063/1.91543
Motooka, T., Harada, S., Ishimaru, M. (1997) Homogeneous Amorphization in High-Energy Ion Implanted Si. Physical Review Letters, 78 (15). 2980-2982 doi:10.1103/physrevlett.78.2980
Holland, O. W. (1989) New mechanism for diffusion of ion‐implanted boron in Si at high concentration. Applied Physics Letters, 54 (9). 798-800 doi:10.1063/1.100850
Motooka, Teruaki, Kobayashi, Fumihiko, Hiroyama, Yuichi, Tokuyama, Takashi, Wei, Long, Tanigawa, Shoichiro (1993) Amorphization Processes and Structural Relaxation in Ion Implanted Si. Japanese Journal of Applied Physics, 32. 318-321 doi:10.1143/jjap.32.318
Holland, O. W., El‐Ghor, M. K., White, C. W. (1988) Damage nucleation and annealing in MeV ion‐implanted Si. Applied Physics Letters, 53 (14). 1282-1284 doi:10.1063/1.99998
 
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