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Kuwatsuka, H., Mikawa, T., Miura, S., Yasuoka, N., Kito, Y., Tanahashi, T., Wada, O. (1990) Measurement of the impact ionization rates in Al0.06Ga0.94Sb. Applied Physics Letters, 57 (3). 249-251 doi:10.1063/1.103705

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Reference TypeJournal (article/letter/editorial)
TitleMeasurement of the impact ionization rates in Al0.06Ga0.94Sb
JournalApplied Physics Letters
AuthorsKuwatsuka, H.Author
Mikawa, T.Author
Miura, S.Author
Yasuoka, N.Author
Kito, Y.Author
Tanahashi, T.Author
Wada, O.Author
Year1990 (July 16)Volume57
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.103705Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8492797Long-form Identifiermindat:1:5:8492797:8
GUID0
Full ReferenceKuwatsuka, H., Mikawa, T., Miura, S., Yasuoka, N., Kito, Y., Tanahashi, T., Wada, O. (1990) Measurement of the impact ionization rates in Al0.06Ga0.94Sb. Applied Physics Letters, 57 (3). 249-251 doi:10.1063/1.103705
Plain TextKuwatsuka, H., Mikawa, T., Miura, S., Yasuoka, N., Kito, Y., Tanahashi, T., Wada, O. (1990) Measurement of the impact ionization rates in Al0.06Ga0.94Sb. Applied Physics Letters, 57 (3). 249-251 doi:10.1063/1.103705
In(1990, July) Applied Physics Letters Vol. 57 (3) AIP Publishing

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Kuwatsuka, H., Mikawa, T., Miura, S., Yasuoka, N., Ito, M., Tanahashi, T., Wada, O. (1991) Impact ionization rates of holes in AlxGa1−xSb. Journal of Applied Physics, 70 (4). 2169-2172 doi:10.1063/1.349455
Miura, S., Mikawa, T., Kuwatsuka, H., Yasuoka, N., Tanahashi, T., Wada, O. (1989) AlGaSb avalanche photodiode exhibiting a very low excess noise factor. Applied Physics Letters, 54 (24). 2422-2423 doi:10.1063/1.101095
Miura, S., Kuwatsuka, H., Mikawa, T., Wada, O. (1986) Planar, embedded InP/GaInAsp‐i‐nphotodiode with very high‐speed response characteristics. Applied Physics Letters, 49 (22). 1522-1524 doi:10.1063/1.97321
Mikawa, T., Kagawa, S., Kaneda, T., Toyama, Y., Mikami, O. (1980) Crystal orientation dependence of ionization rates in germanium. Applied Physics Letters, 37 (4). 387-389 doi:10.1063/1.91932
Anayama, C., Tanahashi, T., Kuwatsuka, H., Nishiyama, S., Isozumi, S., Nakajima, K. (1990) High‐purity GaSb epitaxial layers grown from Sb‐rich solutions. Applied Physics Letters, 56 (3). 239-240 doi:10.1063/1.102842
Kaneda, T., Kagawa, S., Mikawa, T., Toyama, Y., Ando, H. (1980) Ann+‐n‐pgermanium avalanche photodiode. Applied Physics Letters, 36 (7). 572-574 doi:10.1063/1.91550
Pearsall, T. P. (1980) Impact ionization rates for electrons and holes in Ga0.47In0.53As. Applied Physics Letters, 36 (3). 218-220 doi:10.1063/1.91431
Osaka, Fukunobu, Kishi, Yutaka, Kobayashi, Masahiro, Mikawa, Takashi (1985) Low‐temperature impact ionization rates in (111) oriented InP. Applied Physics Letters, 47 (8). 865-866 doi:10.1063/1.95957
Kagawa, S., Kaneda, T., Mikawa, T., Banba, Y., Toyama, Y., Mikami, O. (1981) Fully ion‐implantedp+‐ngermanium avalanche photodiodes. Applied Physics Letters, 38 (6). 429-431 doi:10.1063/1.92385
Vengurlekar, Arvind S., Capasso, Federico, Chiu, T. Heng (1990) Impact ionization in the base of a hot‐electron AlSb/InAs bipolar transistor. Applied Physics Letters, 57 (17). 1772-1774 doi:10.1063/1.104063
Wada, O., Nobuhara, H., Hamaguchi, H., Mikawa, T., Tackeuchi, A., Fujii, T. (1989) Very high speed GaInAs metal‐semiconductor‐metal photodiode incorporating an AlInAs/GaInAs graded superlattice. Applied Physics Letters, 54 (1). 16-17 doi:10.1063/1.100822
 
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