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Anayama, C., Tanahashi, T., Kuwatsuka, H., Nishiyama, S., Isozumi, S., Nakajima, K. (1990) High‐purity GaSb epitaxial layers grown from Sb‐rich solutions. Applied Physics Letters, 56 (3). 239-240 doi:10.1063/1.102842

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Reference TypeJournal (article/letter/editorial)
TitleHigh‐purity GaSb epitaxial layers grown from Sb‐rich solutions
JournalApplied Physics Letters
AuthorsAnayama, C.Author
Tanahashi, T.Author
Kuwatsuka, H.Author
Nishiyama, S.Author
Isozumi, S.Author
Nakajima, K.Author
Year1990 (January 15)Volume56
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.102842Search in ResearchGate
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Mindat Ref. ID8490908Long-form Identifiermindat:1:5:8490908:8
GUID0
Full ReferenceAnayama, C., Tanahashi, T., Kuwatsuka, H., Nishiyama, S., Isozumi, S., Nakajima, K. (1990) High‐purity GaSb epitaxial layers grown from Sb‐rich solutions. Applied Physics Letters, 56 (3). 239-240 doi:10.1063/1.102842
Plain TextAnayama, C., Tanahashi, T., Kuwatsuka, H., Nishiyama, S., Isozumi, S., Nakajima, K. (1990) High‐purity GaSb epitaxial layers grown from Sb‐rich solutions. Applied Physics Letters, 56 (3). 239-240 doi:10.1063/1.102842
In(1990, January) Applied Physics Letters Vol. 56 (3) AIP Publishing

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Kuwatsuka, H., Tanahashi, T., Anayama, C., Nishiyama, S., Mikawa, T., Nakajima, K. (1989) Liquid phase epitaxial growth of AlxGa1−xSb from Sb-rich solution. Journal of Crystal Growth, 94 (4). 923-928 doi:10.1016/0022-0248(89)90126-7
Kondo, M., Sugawara, M., Tanahashi, T., Isozumi, S., Nakajima, K. (1988) Liquid phase epitaxial growth of Fe‐doped semi‐insulating InGaAsP lattice matched to InP over the entire composition range. Applied Physics Letters, 53 (7). 574-576 doi:10.1063/1.99861
Kuwatsuka, H., Mikawa, T., Miura, S., Yasuoka, N., Kito, Y., Tanahashi, T., Wada, O. (1990) Measurement of the impact ionization rates in Al0.06Ga0.94Sb. Applied Physics Letters, 57 (3). 249-251 doi:10.1063/1.103705
Jiang, Wen‐Jang, Sun, Yuh‐Maoh, Wu, Meng‐Chyi (1995) Electrical and photoluminescent properties of high‐quality GaSb and AlGaSb layers grown from Sb‐rich solutions by liquid‐phase epitaxy. Journal of Applied Physics, 77 (4). 1725-1728 doi:10.1063/1.359576
Kang, C. S., Greene, P. E. (1967) PREPARATION AND PROPERTIES OF HIGH‐PURITY EPITAXIAL GaAs GROWN FROM Ga SOLUTION. Applied Physics Letters, 11 (5). 171-173 doi:10.1063/1.1755084
Anayama, C., Sekiguchi, H., Kondo, M., Sudo, H., Fukushima, T., Furuya, A., Tanahashi, T. (1993) One‐step‐metalorganic‐vapor‐phase‐epitaxy‐grown AlGaInP visible laser using simultaneous impurity doping. Applied Physics Letters, 63 (13). 1736-1738 doi:10.1063/1.110699
Sugiura, K., Domen, K., Sugawara, M., Anayama, C., Kondo, M., Tanahashi, T., Nakajima, K. (1991) Analysis of recombination centers in (AlxGa1−x)0.5In0.5P quaternary alloys. Journal of Applied Physics, 70 (9). 4946-4949 doi:10.1063/1.349041
Wu, Meng‐Chyi, Chen, Chi‐Ching (1992) Photoluminescence of high‐quality GaSb grown from Ga‐ and Sb‐rich solutions by liquid‐phase epitaxy. Journal of Applied Physics, 72 (9). 4275-4280 doi:10.1063/1.352216
Chiu, T. H., Ditzenberger, J. A., Luftman, H. S., Tsang, W. T., Ha, N. T. (1990) Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3. Applied Physics Letters, 56 (17). 1688-1690 doi:10.1063/1.103118
Sun, Yuh‐Maoh, Wu, Meng‐Chyi (1995) X‐ray photoelectron spectroscopy and optoelectrical properties of low‐concentration erbium‐doped GaSb layers grown from Sb‐rich solutions by liquid‐phase epitaxy. Journal of Applied Physics, 78 (11). 6691-6695 doi:10.1063/1.360492
Reichert, H., Moss, S. C., Imperatori, P., Evans-Lutterodt, K. (1999) Metastable surface ordering in strain relaxed Si0.5Ge0.5 epitaxial layers grown at high temperature. Applied Physics Letters, 74 (4). 531-533 doi:10.1063/1.123177
 
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