Vote for your favorite mineral in #MinCup25! - Pollucite vs. Tugtupite
It's the cesium #pollucite against the optical changeling #tugtupite for this match.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Paccagnella, A., Callegari, A., Batey, J., Lacey, D. (1990) Properties and thermal stability of the SiO2/GaAs interface with different surface treatments. Applied Physics Letters, 57 (3). 258-260 doi:10.1063/1.104217

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleProperties and thermal stability of the SiO2/GaAs interface with different surface treatments
JournalApplied Physics Letters
AuthorsPaccagnella, A.Author
Callegari, A.Author
Batey, J.Author
Lacey, D.Author
Year1990 (July 16)Volume57
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.104217Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8492856Long-form Identifiermindat:1:5:8492856:0
GUID0
Full ReferencePaccagnella, A., Callegari, A., Batey, J., Lacey, D. (1990) Properties and thermal stability of the SiO2/GaAs interface with different surface treatments. Applied Physics Letters, 57 (3). 258-260 doi:10.1063/1.104217
Plain TextPaccagnella, A., Callegari, A., Batey, J., Lacey, D. (1990) Properties and thermal stability of the SiO2/GaAs interface with different surface treatments. Applied Physics Letters, 57 (3). 258-260 doi:10.1063/1.104217
In(1990, July) Applied Physics Letters Vol. 57 (3) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Callegari, A., Hoh, P. D., Buchanan, D. A., Lacey, D. (1989) Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment. Applied Physics Letters, 54 (4). 332-334 doi:10.1063/1.100961
Callegari, A., Sadana, D. K., Buchanan, D. A., Paccagnella, A., Marshall, E. D., Tischler, M. A., Norcott, M. (1991) Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs. Applied Physics Letters, 58 (22). 2540-2542 doi:10.1063/1.104820
Paccagnella, A., Callegari, A., Latta, E., Gasser, M. (1989) Schottky diodes on hydrogen plasma treatedn‐GaAs surfaces. Applied Physics Letters, 55 (3). 259-261 doi:10.1063/1.101922
Callegari, A., Gousev, E., Zabel, T., Lacey, D., Gribelyuk, M., Jamison, P. (2002) Thermal stability of polycrystalline silicon/metal oxide interfaces. Applied Physics Letters, 81 (22). 4157-4158 doi:10.1063/1.1526150
Fujieda, Shinji (1990) Thermal Stability of the AlN/a-Si/GaAs MIS Diodes with Different GaAs Surface Stoichiometry. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l2099
Callegari, A., Buchanan, D. A., Hovel, H., Simonyi, E., Marwick, A., Lustig, N. E. (1994) Thermal stability and electrical properties of hydrogenated amorphous carbon film. Applied Physics Letters, 65 (25). 3200-3202 doi:10.1063/1.112440
Tarr, N. G., Pulfrey, D. L., Iles, P. A. (1979) MIS solar cells with back surface fields. Applied Physics Letters, 35 (3). 258-260 doi:10.1063/1.91092
Blanpain, B., Wilk, G. D., Olowolafe, J. O., Mayer, J. W., Zheng, L. R. (1990) Thermal stability of coevaporated Al‐Pt thin films on GaAs substrates. Applied Physics Letters, 57 (4). 392-394 doi:10.1063/1.103671
Paccagnella, A., Callegari, A., Carnera, A., Gasser, M., Latta, E., Murakami, M., Norcott, M. (1991) WNxSchottky diodes on plasma treated GaAs. Journal of Applied Physics, 69 (4). 2356-2364 doi:10.1063/1.348718
Morrow, Richard A. (1990) Diffusion in GaAs of a native defect tagged with deuterium. Applied Physics Letters, 57 (3). 276-278 doi:10.1063/1.103713
Ikarashi, Nobuyuki, Watanabe, Koji, Masuzaki, Koji, Nakagawa, Takashi (2006) Thermal stability of a HfO2∕SiO2 interface. Applied Physics Letters, 88 (10). 101912pp. doi:10.1063/1.2182023
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Š OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 8, 2025 21:46:01
Go to top of page