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Paccagnella, A., Callegari, A., Latta, E., Gasser, M. (1989) Schottky diodes on hydrogen plasma treatedn‐GaAs surfaces. Applied Physics Letters, 55 (3). 259-261 doi:10.1063/1.101922

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Reference TypeJournal (article/letter/editorial)
TitleSchottky diodes on hydrogen plasma treatedn‐GaAs surfaces
JournalApplied Physics Letters
AuthorsPaccagnella, A.Author
Callegari, A.Author
Latta, E.Author
Gasser, M.Author
Year1989 (July 17)Volume55
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.101922Search in ResearchGate
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Mindat Ref. ID8489038Long-form Identifiermindat:1:5:8489038:2
GUID0
Full ReferencePaccagnella, A., Callegari, A., Latta, E., Gasser, M. (1989) Schottky diodes on hydrogen plasma treatedn‐GaAs surfaces. Applied Physics Letters, 55 (3). 259-261 doi:10.1063/1.101922
Plain TextPaccagnella, A., Callegari, A., Latta, E., Gasser, M. (1989) Schottky diodes on hydrogen plasma treatedn‐GaAs surfaces. Applied Physics Letters, 55 (3). 259-261 doi:10.1063/1.101922
In(1989, July) Applied Physics Letters Vol. 55 (3) AIP Publishing

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Paccagnella, A., Callegari, A., Carnera, A., Gasser, M., Latta, E., Murakami, M., Norcott, M. (1991) WNxSchottky diodes on plasma treated GaAs. Journal of Applied Physics, 69 (4). 2356-2364 doi:10.1063/1.348718
Carpenter, M. S., Melloch, M. R., Dungan, T. E. (1988) Schottky barrier formation on (NH4)2S‐treatedn‐ andp‐type (100)GaAs. Applied Physics Letters, 53 (1). 66-68 doi:10.1063/1.100572
Hodes, Gary (1989) Polyiodide‐treatedn‐WSe2/Au Schottky junctions. Applied Physics Letters, 54 (21). 2085-2087 doi:10.1063/1.101510
Callegari, A., Sadana, D. K., Buchanan, D. A., Paccagnella, A., Marshall, E. D., Tischler, M. A., Norcott, M. (1991) Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs. Applied Physics Letters, 58 (22). 2540-2542 doi:10.1063/1.104820
Callegari, A., Hoh, P. D., Buchanan, D. A., Lacey, D. (1989) Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment. Applied Physics Letters, 54 (4). 332-334 doi:10.1063/1.100961
Paccagnella, A., Callegari, A., Batey, J., Lacey, D. (1990) Properties and thermal stability of the SiO2/GaAs interface with different surface treatments. Applied Physics Letters, 57 (3). 258-260 doi:10.1063/1.104217
Nolte, D. D. (1989) Band offsets for pseudomorphic InP/GaAs. Applied Physics Letters, 54 (3). 259-261 doi:10.1063/1.100983
Eizenberg, M., Callegari, A. C., Sadana, D. K., Hovel, H. J., Jackson, T. N. (1989) Enhanced Schottky barriers produced by recoil implantation of Mg inton‐GaAs. Applied Physics Letters, 54 (17). 1696-1698 doi:10.1063/1.101306
Weichold, M. H., Villareal, S. S., Lux, R. A. (1989) Low‐frequency noise measurements on AlGaAs/GaAs resonant tunnel diodes. Applied Physics Letters, 55 (19). 1969-1971 doi:10.1063/1.102135
Moser, A., Oosenbrug, A., Latta, E. E., Forster, Th., Gasser, M. (1991) High‐power operation of strained InGaAs/AlGaAs single quantum well lasers. Applied Physics Letters, 59 (21). 2642-2644 doi:10.1063/1.105924
Von Lehmen, A., Ballantyne, J. M. (1984) Picosecond luminescence measurements on fast GaAs Schottky diodes under changing circuit conditions. Applied Physics Letters, 45 (7). 767-769 doi:10.1063/1.95373
 
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