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Carpenter, M. S., Melloch, M. R., Dungan, T. E. (1988) Schottky barrier formation on (NH4)2S‐treatedn‐ andp‐type (100)GaAs. Applied Physics Letters, 53 (1). 66-68 doi:10.1063/1.100572

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Reference TypeJournal (article/letter/editorial)
TitleSchottky barrier formation on (NH4)2S‐treatedn‐ andp‐type (100)GaAs
JournalApplied Physics Letters
AuthorsCarpenter, M. S.Author
Melloch, M. R.Author
Dungan, T. E.Author
Year1988 (July 4)Volume53
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.100572Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8483996Long-form Identifiermindat:1:5:8483996:5
GUID0
Full ReferenceCarpenter, M. S., Melloch, M. R., Dungan, T. E. (1988) Schottky barrier formation on (NH4)2S‐treatedn‐ andp‐type (100)GaAs. Applied Physics Letters, 53 (1). 66-68 doi:10.1063/1.100572
Plain TextCarpenter, M. S., Melloch, M. R., Dungan, T. E. (1988) Schottky barrier formation on (NH4)2S‐treatedn‐ andp‐type (100)GaAs. Applied Physics Letters, 53 (1). 66-68 doi:10.1063/1.100572
In(1988, July) Applied Physics Letters Vol. 53 (1) AIP Publishing

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Carpenter, M. S., Melloch, M. R., Lundstrom, M. S., Tobin, S. P. (1988) Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAspndiodes. Applied Physics Letters, 52 (25). 2157-2159 doi:10.1063/1.99563
Melloch, M. R., Carpenter, M. S., Dungan, T. E., Li, D., Otsuka, N. (1990) Molecular beam epitaxy regrowth by use of ammonium sulfide chemical treatments. Applied Physics Letters, 56 (11). 1064-1066 doi:10.1063/1.102566
Waldrop, J. R. (1988) Metal contacts top‐type GaAs with large Schottky barrier heights. Applied Physics Letters, 53 (16). 1518-1520 doi:10.1063/1.99943
Paccagnella, A., Callegari, A., Latta, E., Gasser, M. (1989) Schottky diodes on hydrogen plasma treatedn‐GaAs surfaces. Applied Physics Letters, 55 (3). 259-261 doi:10.1063/1.101922
Stellwag, T. B., Melloch, M. R., Lundstrom, M. S., Carpenter, M. S., Pierret, R. F. (1990) Orientation‐dependent perimeter recombination in GaAs diodes. Applied Physics Letters, 56 (17). 1658-1660 doi:10.1063/1.103108
Chuang, H. L., Carpenter, M. S., Melloch, M. R., Lundstrom, M. S., Yablonovitch, E., Gmitter, T. J. (1990) Surface passivation effects of As2S3glass on self‐aligned AlGaAs/GaAs heterojunction bipolar transistors. Applied Physics Letters, 57 (20). 2113-2115 doi:10.1063/1.104114
Samaras, J. E., Darling, Robert B. (1992) Effects of low work function metals on the barrier height of sulfide‐treatedn‐type GaAs(100). Journal of Applied Physics, 72 (1). 168-173 doi:10.1063/1.352153
Vos, M., Xu, F., Weaver, J. H., Cheng, H. (1988) Influence of metal interlayers on Schottky barrier formation for Au/ZnSe (100) and Al/ZnSe (100). Applied Physics Letters, 53 (16). 1530-1532 doi:10.1063/1.99947
Cowans, B. A., Dardas, Z., Delgass, W. N., Carpenter, M. S., Melloch, M. R. (1989) X‐ray photoelectron spectroscopy of ammonium sulfide treated GaAs (100) surfaces. Applied Physics Letters, 54 (4). 365-367 doi:10.1063/1.100970
Hwang, K. C., Li, Sheng S. (1990) A study of new surface passivation using P2S5/(NH4)2S on GaAs Schottky barrier diodes. Journal of Applied Physics, 67 (4). 2162-2165 doi:10.1063/1.345555
Kwon, S. D., Kwon, Ho Ki, Choe, Byung‐Doo, Lim, H., Lee, J. Y. (1995) Investigation of electrical properties and stability of Schottky contacts on (NH4)2Sx‐treatedn‐ andp‐type In0.5Ga0.5P. Journal of Applied Physics, 78 (4). 2482-2488 doi:10.1063/1.360102
 
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