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Chuang, H. L., Carpenter, M. S., Melloch, M. R., Lundstrom, M. S., Yablonovitch, E., Gmitter, T. J. (1990) Surface passivation effects of As2S3glass on self‐aligned AlGaAs/GaAs heterojunction bipolar transistors. Applied Physics Letters, 57 (20). 2113-2115 doi:10.1063/1.104114

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Reference TypeJournal (article/letter/editorial)
TitleSurface passivation effects of As2S3glass on self‐aligned AlGaAs/GaAs heterojunction bipolar transistors
JournalApplied Physics Letters
AuthorsChuang, H. L.Author
Carpenter, M. S.Author
Melloch, M. R.Author
Lundstrom, M. S.Author
Yablonovitch, E.Author
Gmitter, T. J.Author
Year1990 (November 12)Volume57
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.104114Search in ResearchGate
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Mindat Ref. ID8492258Long-form Identifiermindat:1:5:8492258:4
GUID0
Full ReferenceChuang, H. L., Carpenter, M. S., Melloch, M. R., Lundstrom, M. S., Yablonovitch, E., Gmitter, T. J. (1990) Surface passivation effects of As2S3glass on self‐aligned AlGaAs/GaAs heterojunction bipolar transistors. Applied Physics Letters, 57 (20). 2113-2115 doi:10.1063/1.104114
Plain TextChuang, H. L., Carpenter, M. S., Melloch, M. R., Lundstrom, M. S., Yablonovitch, E., Gmitter, T. J. (1990) Surface passivation effects of As2S3glass on self‐aligned AlGaAs/GaAs heterojunction bipolar transistors. Applied Physics Letters, 57 (20). 2113-2115 doi:10.1063/1.104114
In(1990, November) Applied Physics Letters Vol. 57 (20) AIP Publishing

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Stellwag, T. B., Melloch, M. R., Lundstrom, M. S., Carpenter, M. S., Pierret, R. F. (1990) Orientation‐dependent perimeter recombination in GaAs diodes. Applied Physics Letters, 56 (17). 1658-1660 doi:10.1063/1.103108
Carpenter, M. S., Melloch, M. R., Lundstrom, M. S., Tobin, S. P. (1988) Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAspndiodes. Applied Physics Letters, 52 (25). 2157-2159 doi:10.1063/1.99563
Tan, K. L., Lundstrom, M. S., Melloch, M. R. (1986) Effect of impurity trapping on the capacitance‐voltage characteristics ofn‐GaAs/N‐AlGaAs heterojunctions. Applied Physics Letters, 48 (6). 428-430 doi:10.1063/1.96520
Harmon, E. S., Melloch, M. R., Lundstrom, M. S., Lovejoy, M. L. (1991) Experimental determination of the effects of degenerate Fermi statistics on heavilyp‐doped GaAs. Applied Physics Letters, 58 (15). 1647-1649 doi:10.1063/1.105152
Mohammad, S. Noor, Chen, J., Chyi, J‐I., Morkoç, H. (1990) Effect of base doping gradients on the electrical performance of AlGaAs/GaAs heterojunction bipolar transistors. Applied Physics Letters, 57 (5). 463-465 doi:10.1063/1.103667
Yablonovitch, E., Gmitter, T. J., Bagley, B. G. (1990) As2S3/GaAs, a new amorphous/crystalline heterojunction for the III‐V semiconductors. Applied Physics Letters, 57 (21). 2241-2243 doi:10.1063/1.104163
Harmon, E. S., Melloch, M. R., Lundstrom, M. S., Cardone, F. (1994) Thermal velocity limits to diffusive electron transport in thin‐basenp+nGaAs bipolar transistors. Applied Physics Letters, 64 (2). 205-207 doi:10.1063/1.111505
Chuang, H. L., DeMoulin, P. D., Klausmeier‐Brown, M. E., Melloch, M. R., Lundstrom, M. S. (1988) Evidence for band‐gap narrowing effects in Be‐doped,p‐p+GaAs homojunction barriers. Journal of Applied Physics, 64 (11). 6361-6364 doi:10.1063/1.342102
Harmon, E. S., Melloch, M. R., Lundstrom, M. S. (1994) Effective band‐gap shrinkage in GaAs. Applied Physics Letters, 64 (4). 502-504 doi:10.1063/1.111110
Klausmeier‐Brown, M. E., Lundstrom, M. S., Melloch, M. R., Tobin, S. P. (1988) Effects of heavy impurity doping on electron injection in p+‐n GaAs diodes. Applied Physics Letters, 52 (26). 2255-2257 doi:10.1063/1.99529
Harmon, E. S., Lovejoy, M. L., Melloch, M. R., Lundstrom, M. S., de Lyon, T. J., Woodall, J. M. (1993) Experimental observation of a minority electron mobility enhancement in degenerately dopedp‐type GaAs. Applied Physics Letters, 63 (4). 536-538 doi:10.1063/1.109997
 
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