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Carpenter, M. S., Melloch, M. R., Lundstrom, M. S., Tobin, S. P. (1988) Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAspndiodes. Applied Physics Letters, 52 (25). 2157-2159 doi:10.1063/1.99563

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Reference TypeJournal (article/letter/editorial)
TitleEffects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAspndiodes
JournalApplied Physics Letters
AuthorsCarpenter, M. S.Author
Melloch, M. R.Author
Lundstrom, M. S.Author
Tobin, S. P.Author
Year1988 (June 20)Volume52
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.99563Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8483432Long-form Identifiermindat:1:5:8483432:2
GUID0
Full ReferenceCarpenter, M. S., Melloch, M. R., Lundstrom, M. S., Tobin, S. P. (1988) Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAspndiodes. Applied Physics Letters, 52 (25). 2157-2159 doi:10.1063/1.99563
Plain TextCarpenter, M. S., Melloch, M. R., Lundstrom, M. S., Tobin, S. P. (1988) Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAspndiodes. Applied Physics Letters, 52 (25). 2157-2159 doi:10.1063/1.99563
In(1988, June) Applied Physics Letters Vol. 52 (25) AIP Publishing

See Also

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Klausmeier‐Brown, M. E., Lundstrom, M. S., Melloch, M. R., Tobin, S. P. (1988) Effects of heavy impurity doping on electron injection in p+‐n GaAs diodes. Applied Physics Letters, 52 (26). 2255-2257 doi:10.1063/1.99529
Carpenter, M. S., Melloch, M. R., Dungan, T. E. (1988) Schottky barrier formation on (NH4)2S‐treatedn‐ andp‐type (100)GaAs. Applied Physics Letters, 53 (1). 66-68 doi:10.1063/1.100572
Chuang, H. L., Carpenter, M. S., Melloch, M. R., Lundstrom, M. S., Yablonovitch, E., Gmitter, T. J. (1990) Surface passivation effects of As2S3glass on self‐aligned AlGaAs/GaAs heterojunction bipolar transistors. Applied Physics Letters, 57 (20). 2113-2115 doi:10.1063/1.104114
Tan, K. L., Lundstrom, M. S., Melloch, M. R. (1986) Effect of impurity trapping on the capacitance‐voltage characteristics ofn‐GaAs/N‐AlGaAs heterojunctions. Applied Physics Letters, 48 (6). 428-430 doi:10.1063/1.96520
Stellwag, T. B., Melloch, M. R., Lundstrom, M. S., Carpenter, M. S., Pierret, R. F. (1990) Orientation‐dependent perimeter recombination in GaAs diodes. Applied Physics Letters, 56 (17). 1658-1660 doi:10.1063/1.103108
Melloch, M. R., Tobin, S. P., Bajgar, C., Keshavarzi, A., Stellwag, T. B., Lush, G. B., Lundstrom, M. S., Emery, K. (1990) High‐efficiency Al0.22Ga0.78As solar cells grown by molecular beam epitaxy. Applied Physics Letters, 57 (1). 52-54 doi:10.1063/1.103575
Datta, S., Melloch, M. R., Bandyopadhyay, S., Lundstrom, M. S. (1986) Proposed structure for large quantum interference effects. Applied Physics Letters, 48 (7). 487-489 doi:10.1063/1.96484
Patkar, M. P., Lundstrom, M. S., Melloch, M. R. (1991) Transistor‐based studies of heavy doping effects inn‐GaAs. Applied Physics Letters, 59 (15). 1853-1854 doi:10.1063/1.106416
Harmon, E. S., Melloch, M. R., Lundstrom, M. S., Lovejoy, M. L. (1991) Experimental determination of the effects of degenerate Fermi statistics on heavilyp‐doped GaAs. Applied Physics Letters, 58 (15). 1647-1649 doi:10.1063/1.105152
Zhang, X., Li, A.Z., Lin, C., Zheng, Y.L., Xu, G.Y., Qi, M., Zhang, Y.G. (2003) The effects of (NH4)2S passivation treatments on the dark current–voltage characteristics of InGaAsSb PIN detectors. Journal of Crystal Growth, 251 (1). 782-786 doi:10.1016/s0022-0248(02)02369-2
Harmon, E. S., Melloch, M. R., Lundstrom, M. S. (1994) Effective band‐gap shrinkage in GaAs. Applied Physics Letters, 64 (4). 502-504 doi:10.1063/1.111110
 
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