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Tan, K. L., Lundstrom, M. S., Melloch, M. R. (1986) Effect of impurity trapping on the capacitance‐voltage characteristics ofn‐GaAs/N‐AlGaAs heterojunctions. Applied Physics Letters, 48 (6). 428-430 doi:10.1063/1.96520

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Reference TypeJournal (article/letter/editorial)
TitleEffect of impurity trapping on the capacitance‐voltage characteristics ofn‐GaAs/N‐AlGaAs heterojunctions
JournalApplied Physics Letters
AuthorsTan, K. L.Author
Lundstrom, M. S.Author
Melloch, M. R.Author
Year1986 (February 10)Volume48
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.96520Search in ResearchGate
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Mindat Ref. ID8478051Long-form Identifiermindat:1:5:8478051:7
GUID0
Full ReferenceTan, K. L., Lundstrom, M. S., Melloch, M. R. (1986) Effect of impurity trapping on the capacitance‐voltage characteristics ofn‐GaAs/N‐AlGaAs heterojunctions. Applied Physics Letters, 48 (6). 428-430 doi:10.1063/1.96520
Plain TextTan, K. L., Lundstrom, M. S., Melloch, M. R. (1986) Effect of impurity trapping on the capacitance‐voltage characteristics ofn‐GaAs/N‐AlGaAs heterojunctions. Applied Physics Letters, 48 (6). 428-430 doi:10.1063/1.96520
In(1986, February) Applied Physics Letters Vol. 48 (6) AIP Publishing

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Qian, Q‐D., Melloch, M. R., Cooper, J. A. (1986) Photosensitive capacitance‐voltage characteristics of molecular beam epitaxially grown GaAs/AlGaAs/GaAs heterostructures. Applied Physics Letters, 48 (10). 638-640 doi:10.1063/1.96729
Cooper, J. A., Qian, Q‐D., Melloch, M. R. (1986) Capacitance‐voltage and current‐voltage characteristics of molecular beam epitaxially grownp+‐GaAs/AlAs/n‐GaAs heterostructures. Applied Physics Letters, 48 (5). 365-366 doi:10.1063/1.96553
Klausmeier‐Brown, M. E., Lundstrom, M. S., Melloch, M. R., Tobin, S. P. (1988) Effects of heavy impurity doping on electron injection in p+‐n GaAs diodes. Applied Physics Letters, 52 (26). 2255-2257 doi:10.1063/1.99529
Lovejoy, M. L., Melloch, M. R., Lundstrom, M. S., Ahrenkiel, R. K. (1992) Minority hole mobility inn+GaAs. Applied Physics Letters, 61 (22). 2683-2684 doi:10.1063/1.108108
Chuang, H. L., Carpenter, M. S., Melloch, M. R., Lundstrom, M. S., Yablonovitch, E., Gmitter, T. J. (1990) Surface passivation effects of As2S3glass on self‐aligned AlGaAs/GaAs heterojunction bipolar transistors. Applied Physics Letters, 57 (20). 2113-2115 doi:10.1063/1.104114
Datta, S., Melloch, M. R., Bandyopadhyay, S., Lundstrom, M. S. (1986) Proposed structure for large quantum interference effects. Applied Physics Letters, 48 (7). 487-489 doi:10.1063/1.96484
Carpenter, M. S., Melloch, M. R., Lundstrom, M. S., Tobin, S. P. (1988) Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAspndiodes. Applied Physics Letters, 52 (25). 2157-2159 doi:10.1063/1.99563
Harmon, E. S., Melloch, M. R., Lundstrom, M. S., Lovejoy, M. L. (1991) Experimental determination of the effects of degenerate Fermi statistics on heavilyp‐doped GaAs. Applied Physics Letters, 58 (15). 1647-1649 doi:10.1063/1.105152
Harmon, E. S., Melloch, M. R., Lundstrom, M. S. (1994) Effective band‐gap shrinkage in GaAs. Applied Physics Letters, 64 (4). 502-504 doi:10.1063/1.111110
Patkar, M. P., Lundstrom, M. S., Melloch, M. R. (1991) Transistor‐based studies of heavy doping effects inn‐GaAs. Applied Physics Letters, 59 (15). 1853-1854 doi:10.1063/1.106416
Stellwag, T. B., Melloch, M. R., Lundstrom, M. S., Carpenter, M. S., Pierret, R. F. (1990) Orientation‐dependent perimeter recombination in GaAs diodes. Applied Physics Letters, 56 (17). 1658-1660 doi:10.1063/1.103108
 
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