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Chambers, S. A., Loebs, V. A. (1992) Reaction and epitaxial regrowth at the Ni/GaAs(001) interface: A state‐specific x‐ray photoelectron diffraction investigation. Applied Physics Letters, 60 (1). 38-40 doi:10.1063/1.107358

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Reference TypeJournal (article/letter/editorial)
TitleReaction and epitaxial regrowth at the Ni/GaAs(001) interface: A state‐specific x‐ray photoelectron diffraction investigation
JournalApplied Physics Letters
AuthorsChambers, S. A.Author
Loebs, V. A.Author
Year1992 (January 6)Volume60
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.107358Search in ResearchGate
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Mindat Ref. ID8497718Long-form Identifiermindat:1:5:8497718:6
GUID0
Full ReferenceChambers, S. A., Loebs, V. A. (1992) Reaction and epitaxial regrowth at the Ni/GaAs(001) interface: A state‐specific x‐ray photoelectron diffraction investigation. Applied Physics Letters, 60 (1). 38-40 doi:10.1063/1.107358
Plain TextChambers, S. A., Loebs, V. A. (1992) Reaction and epitaxial regrowth at the Ni/GaAs(001) interface: A state‐specific x‐ray photoelectron diffraction investigation. Applied Physics Letters, 60 (1). 38-40 doi:10.1063/1.107358
In(1992, January) Applied Physics Letters Vol. 60 (1) AIP Publishing

See Also

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Chambers, S. A., Loebs, V. A. (1989) X-ray-photoelectron-diffraction investigation of strain at the Si/Ge(001) interface. Physical Review Letters, 63 (6). 640-643 doi:10.1103/physrevlett.63.640
Chambers, S. A., Loebs, V. A. (1990) Elastic strain at pseudomorphic semiconductor heterojunctions studied by x-ray photoelectron diffraction: Ge/Si(001) and Si/Ge(001) Physical Review B, 42 (8) 5109-5116 doi:10.1103/physrevb.42.5109
Chambers, S. A. (1990) Surface termination of epitaxial NiAl on GaAs(001) by high-angular-resolution x-ray photoelectron diffraction. Physical Review B, 42 (17) 10865-10872 doi:10.1103/physrevb.42.10865
Chambers, S. A., Loebs, V. A. (1993) Structure and band bending at Si/GaAs(001)-(2×4) interfaces. Physical Review B, 47 (15) 9513-9522 doi:10.1103/physrevb.47.9513
Chambers, Scott A. (1991) Epitaxial film crystallography by high-energy Auger and X-ray photoelectron diffraction. Advances in Physics, 40 (4). 357-415 doi:10.1080/00018739100101502
Chambers, S. A., Sundaram, V. S. (1990) Structure, chemistry, and band bending at Se‐passivated GaAs(001) surfaces. Applied Physics Letters, 57 (22). 2342-2344 doi:10.1063/1.103887
Zhang, S., Kobayashi, N. (1992) X‐ray diffraction study of annealed ZnSe/GaAs superlattices. Applied Physics Letters, 60 (20). 2499-2501 doi:10.1063/1.106946
Lépine, B., Quémerais, A., Sébilleau, D., Jézéquel, G., Agliz, D., Ballini, Y., Guivarc’h, A. (1994) X‐ray photoelectron diffraction study of YbAs/GaAs(001) and ScAs/GaAs(001) heterostructures. Journal of Applied Physics, 76 (9). 5218-5224 doi:10.1063/1.357171
Chambers, S.A. (1991) Surface dimer formation on GaAs(001)- studied by X-ray photoelectron diffraction. Surface Science, 248 (3). doi:10.1016/0039-6028(91)91171-s
Look, D. C., Grant, J. T., Sizelove, J. R. (1992) Shifted x‐ray photoelectron peak in molecular beam epitaxial GaAs grown at 200 °C. Applied Physics Letters, 61 (11). 1329-1331 doi:10.1063/1.107582
Francoeur, S., Seryogin, G. A., Nikishin, S. A., Temkin, H. (1999) X-ray diffraction study of chalcopyrite ordering in epitaxial ZnSnP2 grown on GaAs. Applied Physics Letters, 74 (24). 3678-3680 doi:10.1063/1.123219
 
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