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Zhang, S., Kobayashi, N. (1992) X‐ray diffraction study of annealed ZnSe/GaAs superlattices. Applied Physics Letters, 60 (20). 2499-2501 doi:10.1063/1.106946

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Reference TypeJournal (article/letter/editorial)
TitleX‐ray diffraction study of annealed ZnSe/GaAs superlattices
JournalApplied Physics Letters
AuthorsZhang, S.Author
Kobayashi, N.Author
Year1992 (May 18)Volume60
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.106946Search in ResearchGate
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Mindat Ref. ID8498768Long-form Identifiermindat:1:5:8498768:8
GUID0
Full ReferenceZhang, S., Kobayashi, N. (1992) X‐ray diffraction study of annealed ZnSe/GaAs superlattices. Applied Physics Letters, 60 (20). 2499-2501 doi:10.1063/1.106946
Plain TextZhang, S., Kobayashi, N. (1992) X‐ray diffraction study of annealed ZnSe/GaAs superlattices. Applied Physics Letters, 60 (20). 2499-2501 doi:10.1063/1.106946
In(1992, May) Applied Physics Letters Vol. 60 (20) AIP Publishing

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Zhang, S., Kobayashi, N. (1992) Photoluminescence and structure properties of GaAs/ZnSe quantum wells. Applied Physics Letters, 60 (7). 883-885 doi:10.1063/1.106493
Ramesh, S., Kobayashi, N., Horikoshi, Y. (1990) Migration‐enhanced epitaxy growth and characterization of high quality ZnSe/GaAs superlattices. Applied Physics Letters, 57 (11). 1102-1104 doi:10.1063/1.103545
Phang, Y. H., Savage, D. E., Kuech, T. F., Lagally, M. G., Park, J. S., Wang, K. L. (1992) X‐ray diffraction determination of interfacial roughness correlation in SixGe1−x/Si and GaAs/AlxGa1−xAs superlattices. Applied Physics Letters, 60 (24). 2986-2988 doi:10.1063/1.106784
Matyi, R. J., Melloch, M. R., Woodall, J. M. (1992) High resolution x‐ray diffraction analysis of annealed low‐temperature gallium arsenide. Applied Physics Letters, 60 (21). 2642-2644 doi:10.1063/1.106881
Goldfarb, I., Zolotoyabko, E., Shechtman, D. (1993) X‐ray diffraction characterization of ternary artificial superlattices. Journal of Applied Physics, 74 (4). 2501-2506 doi:10.1063/1.354689
Shen, Aidong, Wang, Hailong, Wang, Zhijiang, Lü, Shaozhe (1992) Absorption spectra of ZnSe‐ZnS strained‐layer superlattices grown on (001) GaAs by molecular beam epitaxy. Applied Physics Letters, 60 (21). 2640-2641 doi:10.1063/1.106880
Auvray, P., Baudet, M., Regreny, A. (1987) X‐ray diffraction study of intentionally disordered GaAlAs‐GaAs superlattices. Journal of Applied Physics, 62 (2). 456-460 doi:10.1063/1.339821
Chambers, S. A., Loebs, V. A. (1992) Reaction and epitaxial regrowth at the Ni/GaAs(001) interface: A state‐specific x‐ray photoelectron diffraction investigation. Applied Physics Letters, 60 (1). 38-40 doi:10.1063/1.107358
Hasegawa, T., Kitamura, T., Kobayashi, H., Kumakura, H., Kitaguchi, H., Togano, K. (1992) High‐temperature x‐ray diffraction analysis for Bi2Sr2CaCu2Oy. Applied Physics Letters, 60 (21). 2692-2694 doi:10.1063/1.106875
Kyutt, R. N., Toropov, A. A., Sorokin, S. V., Shubina, T. V., Ivanov, S. V., Karlsteen, M., Willander, M. (1999) Broadening of submonolayer CdSe sheets in CdSe/ZnSe superlattices studied by x-ray diffraction. Applied Physics Letters, 75 (3). 373-375 doi:10.1063/1.124379
He, X. G., Erdtmann, M., Williams, R., Kim, S., Razeghi, M. (1994) Correlation between x‐ray diffraction patterns and strain distribution inside GaInP/GaAs superlattices. Applied Physics Letters, 65 (22). 2812-2814 doi:10.1063/1.112574
 
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