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Zhao, B., Chen, T. R., Zhuang, Y. H., Yariv, A., Ungar, J. E., Oh, S. (1992) High speed operation of very low threshold strained InGaAs/GaAs double quantum well lasers. Applied Physics Letters, 60 (11). 1295-1297 doi:10.1063/1.107321

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Reference TypeJournal (article/letter/editorial)
TitleHigh speed operation of very low threshold strained InGaAs/GaAs double quantum well lasers
JournalApplied Physics Letters
AuthorsZhao, B.Author
Chen, T. R.Author
Zhuang, Y. H.Author
Yariv, A.Author
Ungar, J. E.Author
Oh, S.Author
Year1992 (March 16)Volume60
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.107321Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8497911Long-form Identifiermindat:1:5:8497911:1
GUID0
Full ReferenceZhao, B., Chen, T. R., Zhuang, Y. H., Yariv, A., Ungar, J. E., Oh, S. (1992) High speed operation of very low threshold strained InGaAs/GaAs double quantum well lasers. Applied Physics Letters, 60 (11). 1295-1297 doi:10.1063/1.107321
Plain TextZhao, B., Chen, T. R., Zhuang, Y. H., Yariv, A., Ungar, J. E., Oh, S. (1992) High speed operation of very low threshold strained InGaAs/GaAs double quantum well lasers. Applied Physics Letters, 60 (11). 1295-1297 doi:10.1063/1.107321
In(1992, March) Applied Physics Letters Vol. 60 (11) AIP Publishing

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Chen, T. R., Zhao, B., Zhuang, Y. H., Yariv, A., Ungar, J. E., Oh, S. (1992) Ultralow threshold multiquantum well InGaAs lasers. Applied Physics Letters, 60 (15). 1782-1784 doi:10.1063/1.107186
Chen, T. R., Eng, L. E., Zhuang, Y. H., Xu, Y. J., Zaren, H., Yariv, A. (1990) High‐power operation of buried‐heterostructure strained‐layer InGaAs/GaAs single quantum well lasers. Applied Physics Letters, 57 (26). 2762-2763 doi:10.1063/1.103779
Zhao, B., Chen, T. R., Eng, L. E., Zhuang, Y. H., Shakouri, A., Yariv, A. (1994) Sub‐100 ÎŒA current operation of strained InGaAs quantum well lasers at low temperatures. Applied Physics Letters, 65 (14). 1805-1807 doi:10.1063/1.112849
Chen, T. R., Eng, L. E., Zhao, B., Zhuang, Y. H., Yariv, A. (1993) Strained single quantum well InGaAs lasers with a threshold current of 0.25 mA. Applied Physics Letters, 63 (19). 2621-2623 doi:10.1063/1.110425
Chen, T. R., Zhuang, Yuhua, Xu, Y. J., Zhao, B., Yariv, A., Ungar, J., Oh, Se (1992) Second quantized state oscillation and wavelength switching in strained‐layer multiquantum‐well lasers. Applied Physics Letters, 60 (24). 2954-2956 doi:10.1063/1.106800
Eng, L. E., Sa’ar, A., Chen, T. R., GravĂ©, I., Kuze, N., Yariv, A. (1991) Microampere threshold current operation of GaAs and strained InGaAs quantum well lasers at low temperatures (5 K). Applied Physics Letters, 58 (24). 2752-2754 doi:10.1063/1.104775
Zhao, B., Chen, T. R., Yariv, A. (1992) On the high speed modulation bandwidth of quantum well lasers. Applied Physics Letters, 60 (3). 313-315 doi:10.1063/1.106697
Zhao, B., Chen, T. R., Yamada, Y., Zhuang, Y. H., Kuze, N., Yariv, A. (1992) Evidence for state filling effect on high speed modulation dynamics of quantum well lasers. Applied Physics Letters, 61 (16). 1907-1909 doi:10.1063/1.108359
Eng, L. E., Chen, T. R., Sanders, S., Zhuang, Y. H., Zhao, B., Yariv, A., Morkoç, H. (1989) Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 55 (14). 1378-1379 doi:10.1063/1.101599
Chen, T. R., Zhuang, Y. H., Eng, L. E., Yariv, A. (1990) Cavity length dependence of the wavelength of strained‐layer InGaAs/GaAs lasers. Applied Physics Letters, 57 (23). 2402-2403 doi:10.1063/1.103858
Zhao, B., Chen, T. R., Iannelli, J., Zhuang, Y. H., Yamada, Y., Yariv, A. (1993) State filling effect on spectral linewidth of quantum well lasers. Applied Physics Letters, 62 (11). 1200-1202 doi:10.1063/1.108733
 
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