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Eng, L. E., Chen, T. R., Sanders, S., Zhuang, Y. H., Zhao, B., Yariv, A., Morkoç, H. (1989) Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 55 (14). 1378-1379 doi:10.1063/1.101599

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Reference TypeJournal (article/letter/editorial)
TitleSubmilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsEng, L. E.Author
Chen, T. R.Author
Sanders, S.Author
Zhuang, Y. H.Author
Zhao, B.Author
Yariv, A.Author
Morkoç, H.Author
Year1989 (October 2)Volume55
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.101599Search in ResearchGate
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Mindat Ref. ID8488025Long-form Identifiermindat:1:5:8488025:1
GUID0
Full ReferenceEng, L. E., Chen, T. R., Sanders, S., Zhuang, Y. H., Zhao, B., Yariv, A., Morkoç, H. (1989) Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 55 (14). 1378-1379 doi:10.1063/1.101599
Plain TextEng, L. E., Chen, T. R., Sanders, S., Zhuang, Y. H., Zhao, B., Yariv, A., Morkoç, H. (1989) Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 55 (14). 1378-1379 doi:10.1063/1.101599
In(1989, October) Applied Physics Letters Vol. 55 (14) AIP Publishing

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Chen, T. R., Eng, L. E., Zhao, B., Zhuang, Y. H., Yariv, A. (1993) Strained single quantum well InGaAs lasers with a threshold current of 0.25 mA. Applied Physics Letters, 63 (19). 2621-2623 doi:10.1063/1.110425
Chen, T. R., Eng, L. E., Zhuang, Y. H., Xu, Y. J., Zaren, H., Yariv, A. (1990) High‐power operation of buried‐heterostructure strained‐layer InGaAs/GaAs single quantum well lasers. Applied Physics Letters, 57 (26). 2762-2763 doi:10.1063/1.103779
Zhao, B., Chen, T. R., Eng, L. E., Zhuang, Y. H., Shakouri, A., Yariv, A. (1994) Sub‐100 μA current operation of strained InGaAs quantum well lasers at low temperatures. Applied Physics Letters, 65 (14). 1805-1807 doi:10.1063/1.112849
Chen, T. R., Zhao, B., Zhuang, Y. H., Yariv, A., Ungar, J. E., Oh, S. (1992) Ultralow threshold multiquantum well InGaAs lasers. Applied Physics Letters, 60 (15). 1782-1784 doi:10.1063/1.107186
Chen, T. R., Eng, L. E., Zhuang, Y. H., Yariv, A. (1990) Experimental determination of transparency current density and estimation of the threshold current of semiconductor quantum well lasers. Applied Physics Letters, 56 (11). 1002-1004 doi:10.1063/1.102598
Zhao, B., Chen, T. R., Zhuang, Y. H., Yariv, A., Ungar, J. E., Oh, S. (1992) High speed operation of very low threshold strained InGaAs/GaAs double quantum well lasers. Applied Physics Letters, 60 (11). 1295-1297 doi:10.1063/1.107321
Chen, H. Z., Paslaski, J., Yariv, A., Morkoç, H. (1988) High‐frequency modulation of AlGaAs/GaAs lasers grown on Si substrate by molecular beam epitaxy. Applied Physics Letters, 52 (8). 605-606 doi:10.1063/1.99378
Chen, H. Z., Ghaffari, A., Morkoç, H., Yariv, A. (1987) Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities. Applied Physics Letters, 51 (25). 2094-2096 doi:10.1063/1.98958
Offsey, S. D., Schaff, W. J., Tasker, P. J., Ennen, H., Eastman, L. F. (1989) Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 54 (25). 2527-2529 doi:10.1063/1.101083
Zhao, B., Chen, T. R., Wu, S., Zhuang, Y. H., Yamada, Y., Yariv, A. (1993) Direct measurement of linewidth enhancement factors in quantum well lasers of different quantum well barrier heights. Applied Physics Letters, 62 (14). 1591-1593 doi:10.1063/1.108647
Alferov, Zh. I., Andreyev, V. M., Mereutza, A. Z., Syrbu, A. V., Yakovlev, V. P. (1990) Extremely low threshold current AlGaAs buried‐heterostructure quantum well lasers grown by liquid phase epitaxy. Applied Physics Letters, 57 (27). 2873-2875 doi:10.1063/1.103762
 
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