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Alferov, Zh. I., Andreyev, V. M., Mereutza, A. Z., Syrbu, A. V., Yakovlev, V. P. (1990) Extremely low threshold current AlGaAs buried‐heterostructure quantum well lasers grown by liquid phase epitaxy. Applied Physics Letters, 57 (27). 2873-2875 doi:10.1063/1.103762

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Reference TypeJournal (article/letter/editorial)
TitleExtremely low threshold current AlGaAs buried‐heterostructure quantum well lasers grown by liquid phase epitaxy
JournalApplied Physics Letters
AuthorsAlferov, Zh. I.Author
Andreyev, V. M.Author
Mereutza, A. Z.Author
Syrbu, A. V.Author
Yakovlev, V. P.Author
Year1990 (December 31)Volume57
Issue27
PublisherAIP Publishing
DOIdoi:10.1063/1.103762Search in ResearchGate
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Mindat Ref. ID8492759Long-form Identifiermindat:1:5:8492759:8
GUID0
Full ReferenceAlferov, Zh. I., Andreyev, V. M., Mereutza, A. Z., Syrbu, A. V., Yakovlev, V. P. (1990) Extremely low threshold current AlGaAs buried‐heterostructure quantum well lasers grown by liquid phase epitaxy. Applied Physics Letters, 57 (27). 2873-2875 doi:10.1063/1.103762
Plain TextAlferov, Zh. I., Andreyev, V. M., Mereutza, A. Z., Syrbu, A. V., Yakovlev, V. P. (1990) Extremely low threshold current AlGaAs buried‐heterostructure quantum well lasers grown by liquid phase epitaxy. Applied Physics Letters, 57 (27). 2873-2875 doi:10.1063/1.103762
In(1990, December) Applied Physics Letters Vol. 57 (27) AIP Publishing

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Eng, L. E., Chen, T. R., Sanders, S., Zhuang, Y. H., Zhao, B., Yariv, A., Morkoç, H. (1989) Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 55 (14). 1378-1379 doi:10.1063/1.101599
Choi, H. K., Wang, C. A. (1990) InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency. Applied Physics Letters, 57 (4). 321-323 doi:10.1063/1.103678
Tsang, W. T. (1981) Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular‐beam epitaxy. Applied Physics Letters, 39 (10). 786-788 doi:10.1063/1.92583
Ivanov, S. V., Kaygorodov, V. A., Sorokin, S. V., Meltser, B. Ya., Solov’ev, V. A., Terent’ev, Ya. V., Lyublinskaya, O. G., Moiseev, K. D., Grebenshchikova, E. A., Mikhailova, M. P., Toropov, A. A., Yakovlev, Yu. P., Kop’ev, P. S., Alferov, Zh. I. (2003) A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy. Applied Physics Letters, 82 (21). 3782-3784 doi:10.1063/1.1577834
Feit, Z., Kostyk, D., Woods, R. J., Mak, P. (1990) Molecular beam epitaxy grown PbEuSeTe buried‐heterostructure lasers with continuous wave operation at 195 K. Applied Physics Letters, 57 (27). 2891-2893 doi:10.1063/1.103768
Hobson, W. S., van der Ziel, J. P., Levi, A. F. J., O’Gorman, J., Abernathy, C. R., Geva, M., Luther, L. C., Swaminathan, V. (1991) Low‐threshold GaAs/AlGaAs quantum‐well lasers grown by organometallic vapor‐phase epitaxy using trimethylamine alane. Journal of Applied Physics, 70 (1). 432-435 doi:10.1063/1.350294
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Richard, T. A., Major, J. S., Kish, F. A., Holonyak, N., Smith, S. C., Burnham, R. D. (1990) Low‐threshold disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers by open‐tube rapid thermal annealing. Applied Physics Letters, 57 (27). 2904-2906 doi:10.1063/1.103748
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Williams, R. L., Dion, M., Chatenoud, F., Dzurko, K. (1991) Extremely low threshold current strained InGaAs/AlGaAs lasers by molecular beam epitaxy. Applied Physics Letters, 58 (17). 1816-1818 doi:10.1063/1.105098
 
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