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Feit, Z., Kostyk, D., Woods, R. J., Mak, P. (1990) Molecular beam epitaxy grown PbEuSeTe buried‐heterostructure lasers with continuous wave operation at 195 K. Applied Physics Letters, 57 (27). 2891-2893 doi:10.1063/1.103768

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Reference TypeJournal (article/letter/editorial)
TitleMolecular beam epitaxy grown PbEuSeTe buried‐heterostructure lasers with continuous wave operation at 195 K
JournalApplied Physics Letters
AuthorsFeit, Z.Author
Kostyk, D.Author
Woods, R. J.Author
Mak, P.Author
Year1990 (December 31)Volume57
Issue27
PublisherAIP Publishing
DOIdoi:10.1063/1.103768Search in ResearchGate
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Mindat Ref. ID8492771Long-form Identifiermindat:1:5:8492771:0
GUID0
Full ReferenceFeit, Z., Kostyk, D., Woods, R. J., Mak, P. (1990) Molecular beam epitaxy grown PbEuSeTe buried‐heterostructure lasers with continuous wave operation at 195 K. Applied Physics Letters, 57 (27). 2891-2893 doi:10.1063/1.103768
Plain TextFeit, Z., Kostyk, D., Woods, R. J., Mak, P. (1990) Molecular beam epitaxy grown PbEuSeTe buried‐heterostructure lasers with continuous wave operation at 195 K. Applied Physics Letters, 57 (27). 2891-2893 doi:10.1063/1.103768
In(1990, December) Applied Physics Letters Vol. 57 (27) AIP Publishing

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Feit, Z., Kostyk, D., Woods, R. J., Mak, P. (1991) Single‐mode molecular beam epitaxy grown PbEuSeTe/PbTe buried‐heterostructure diode lasers for CO2high‐resolution spectroscopy. Applied Physics Letters, 58 (4). 343-345 doi:10.1063/1.104652
Feit, Z., Woods, R., Kostyk, D., Jalenak, W. (1989) Low‐threshold PbEuSeTe double‐heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters, 55 (1). 16-18 doi:10.1063/1.101743
Feit, Z., McDonald, M., Woods, R. J., Archambault, V., Mak, P. (1996) Low threshold PbEuSeTe/PbTe separate confinement buried heterostructure diode lasers. Applied Physics Letters, 68 (6). 738-740 doi:10.1063/1.116726
Alferov, Zh. I., Andreyev, V. M., Mereutza, A. Z., Syrbu, A. V., Yakovlev, V. P. (1990) Extremely low threshold current AlGaAs buried‐heterostructure quantum well lasers grown by liquid phase epitaxy. Applied Physics Letters, 57 (27). 2873-2875 doi:10.1063/1.103762
Walpole, J. N., Calawa, A. R., Harman, T. C., Groves, S. H. (1976) Double‐heterostructure PbSnTe lasers grown by molecular‐beam epitaxy with cw operation up to 114 K. Applied Physics Letters, 28 (9). 552-554 doi:10.1063/1.88820
Feit, Z., Mak, P., Woods, R., McDonald, M. (1996) MBE grown buried heterostructure separate confinement multiple quantum well Pb0.9854Eu0.0146SexTe1−x/Pb0.981Sn0.019Te tunable diode lasers for high resolution sepctroscopy. Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 52 (8) 851-855 doi:10.1016/0584-8539(95)01626-0
Tsang, W. T., Logan, R. A. (1980) GaAs‐AlxGa1−xAs buried‐heterostructure lasers grown by molecular beam epitaxy with Al0.65Ga0.35As (Ge‐doped) liquid phase epitaxy overgrown layer for current injection confinement. Applied Physics Letters, 36 (9). 730-733 doi:10.1063/1.91648
Choi, H. K., Eglash, S. J. (1991) Room‐temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy. Applied Physics Letters, 59 (10). 1165-1166 doi:10.1063/1.105544
Tsang, W. T. (1984) Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm. Applied Physics Letters, 44 (3). 288-290 doi:10.1063/1.94727
Cho, A. Y., Dixon, R. W., Casey, H. C., Hartman, R. L. (1976) Continuous room‐temperature operation of GaAs‐AlxGa1−xAs double‐heterostructure lasers prepared by molecular‐beam epitaxy. Applied Physics Letters, 28 (9). 501-503 doi:10.1063/1.88832
Tsang, W. T., Hartman, R. L. (1981) cw narrow beam (AlGa)As multiquantum‐well heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters, 38 (7). 502-504 doi:10.1063/1.92423
 
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