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Feit, Z., Woods, R., Kostyk, D., Jalenak, W. (1989) Low‐threshold PbEuSeTe double‐heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters, 55 (1). 16-18 doi:10.1063/1.101743

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Reference TypeJournal (article/letter/editorial)
TitleLow‐threshold PbEuSeTe double‐heterostructure lasers grown by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsFeit, Z.Author
Woods, R.Author
Kostyk, D.Author
Jalenak, W.Author
Year1989 (July 3)Volume55
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.101743Search in ResearchGate
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Mindat Ref. ID8487659Long-form Identifiermindat:1:5:8487659:5
GUID0
Full ReferenceFeit, Z., Woods, R., Kostyk, D., Jalenak, W. (1989) Low‐threshold PbEuSeTe double‐heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters, 55 (1). 16-18 doi:10.1063/1.101743
Plain TextFeit, Z., Woods, R., Kostyk, D., Jalenak, W. (1989) Low‐threshold PbEuSeTe double‐heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters, 55 (1). 16-18 doi:10.1063/1.101743
In(1989, July) Applied Physics Letters Vol. 55 (1) AIP Publishing

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Feit, Z., Kostyk, D., Woods, R. J., Mak, P. (1990) Molecular beam epitaxy grown PbEuSeTe buried‐heterostructure lasers with continuous wave operation at 195 K. Applied Physics Letters, 57 (27). 2891-2893 doi:10.1063/1.103768
Feit, Z., Kostyk, D., Woods, R. J., Mak, P. (1991) Single‐mode molecular beam epitaxy grown PbEuSeTe/PbTe buried‐heterostructure diode lasers for CO2high‐resolution spectroscopy. Applied Physics Letters, 58 (4). 343-345 doi:10.1063/1.104652
Feit, Z., McDonald, M., Woods, R. J., Archambault, V., Mak, P. (1996) Low threshold PbEuSeTe/PbTe separate confinement buried heterostructure diode lasers. Applied Physics Letters, 68 (6). 738-740 doi:10.1063/1.116726
Tsang, W. T. (1986) Very low current threshold GaAs/Al0.5Ga0.5As double‐heterostructure lasers grown by chemical beam epitaxy. Applied Physics Letters, 48 (8). 511-513 doi:10.1063/1.96490
Tsang, W. T. (1979) Low‐current‐threshold and high‐lasing uniformity GaAs–AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters, 34 (7). 473-475 doi:10.1063/1.90839
Tsang, W. T., Reinhart, F. K., Ditzenberger, J. A. (1980) Very low current threshold GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters, 36 (1). 11-14 doi:10.1063/1.91297
Tsang, W. T. (1981) Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular‐beam epitaxy. Applied Physics Letters, 39 (10). 786-788 doi:10.1063/1.92583
Tsang, W. T. (1982) Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters, 40 (3). 217-219 doi:10.1063/1.93046
Tsang, W. T., Holbrook, W. R., Fraley, P. E. (1981) The high‐temperature (55–70 °C) device characteristics of cw (AlGa)As double‐heterostructure proton‐bombarded stripe lasers grown by molecular beam epitaxy. Applied Physics Letters, 38 (1). 6-9 doi:10.1063/1.92133
Eng, L. E., Chen, T. R., Sanders, S., Zhuang, Y. H., Zhao, B., Yariv, A., Morkoç, H. (1989) Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 55 (14). 1378-1379 doi:10.1063/1.101599
Tsang, W. T., Reinhart, F. K., Ditzenberger, J. A. (1980) The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters, 36 (2). 118-120 doi:10.1063/1.91400
 
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