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(1995, December) Applied Physics Letters Vol. 67 (23) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1995 (December)Volume67
Issue<   23   >
PublisherAIP Publishing
Mindat Ref. ID8514892Long-form Identifiermindat:1:5:8514892:1
GUID0
Full Reference(1995, December) Applied Physics Letters Vol. 67 (23) AIP Publishing
Plain Text(1995, December) Applied Physics Letters Vol. 67 (23) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 67. AIP Publishing

Contains

Hu, Suxing, Fu, Ensheng (1995) Compression mechanism of picosecond optical pulse in far infrared waveguide free electron laser. Applied Physics Letters, 67 (23). 3373-3375 doi:10.1063/1.114897
Manfredotti, C., Wang, F., Polesello, P., Vittone, E., Fizzotti, F., Scacco, A. (1995) Blue‐violet electroluminescence and photocurrent spectra from polycrystalline chemical vapor deposited diamond film. Applied Physics Letters, 67 (23). 3376-3378 doi:10.1063/1.114898
Gao, Yong, Liu, Xiding, Li, Guozheng, Liu, Enke, Zhang, Xiangjiu, Lu, Xuekun, Hu, Jihuang, Wang, Xun (1995) Si1−xGex/Si asymmetric 2×2 electro‐optical switch of total internal reflection type. Applied Physics Letters, 67 (23). 3379-3380 doi:10.1063/1.114899
Hamaguchi, Maki, Yoshino, Katsumi (1995) Polarized electroluminescence from rubbing‐aligned poly(2,5‐dinonyloxy‐1,4‐phenylenevinylene) films. Applied Physics Letters, 67 (23). 3381-3383 doi:10.1063/1.114900
Li, Jiang, Chen, Xiaojun, Wu, Bin, Li, Bing, Pan, Shihong (1995) Laser‐induced dark traces in doped LiNbO3 crystals. Applied Physics Letters, 67 (23). 3384-3386 doi:10.1063/1.114901
Smith, M., Chen, G. D., Li, J. Z., Lin, J. Y., Jiang, H. X., Salvador, A., Kim, W. K., Aktas, O., Botchkarev, A., Morkoç, H. (1995) Excitonic recombination in GaN grown by molecular beam epitaxy. Applied Physics Letters, 67 (23). 3387-3389 doi:10.1063/1.114902
Bardinal, V., Legros, R., Fontaine, C. (1995) Precision Bragg reflectors obtained by molecular beam epitaxy under in situ tunable dynamic reflectometry control. Applied Physics Letters, 67 (23). 3390-3392 doi:10.1063/1.114903
Danailov, M. B., Apai, P. (1995) UV‐induced transmission frustration in optical fibers. Applied Physics Letters, 67 (23). 3393-3395 doi:10.1063/1.114904
Kasamatsu, T., Tsunekane, M., Sekita, H., Morishige, Y., Kishida, S. (1995) 1 pm spectrally narrowed ArF excimer laser injection locked by fourth harmonic seed source of 773.6 nm Ti:sapphire laser. Applied Physics Letters, 67 (23). 3396-3398 doi:10.1063/1.114905
Cheng, S. D., Biswas, R., Ozbay, E., McCalmont, S., Tuttle, G., Ho, K.‐M. (1995) Optimized dipole antennas on photonic band gap crystals. Applied Physics Letters, 67 (23). 3399-3401 doi:10.1063/1.114906
de Sande, J. C. G., Rodríguez, A., Rodríguez, T. (1995) Spectroscopic ellipsometry determination of the refractive index of strained Si1−xGex layers in the near‐infrared wavelength range (0.9–1.7 μm). Applied Physics Letters, 67 (23). 3402-3404 doi:10.1063/1.114907
Ouchi, Toshihiko, Majima, Masao, Ikeda, Sotomitsu, Ono, Takeo, Uchida, Mamoru, Handa, Yuichi (1995) Polarization switching in AlGaAs/GaAs distributed feedback lasers between the stable single longitudinal modes. Applied Physics Letters, 67 (23). 3405-3407 doi:10.1063/1.114908
ObermĂźller, Christian, Karrai, Khaled (1995) Far field characterization of diffracting circular apertures. Applied Physics Letters, 67 (23). 3408-3410 doi:10.1063/1.115262
Chen, H. D., Udayakumar, K. R., Gaskey, C. J., Cross, L. E. (1995) Electrical properties’ maxima in thin films of the lead zirconate–lead titanate solid solution system. Applied Physics Letters, 67 (23). 3411-3413 doi:10.1063/1.115263
Pehrsson, Pehr E., Long, J. P., Marchywka, Michael J., Butler, James E. (1995) Electrochemically induced surface chemistry and negative electron affinity on diamond (100). Applied Physics Letters, 67 (23). 3414-3416 doi:10.1063/1.115264
Zhang, Q. M., Huang, Y. N., Shen, H. M., Yan, F., Gu, G., Du, Y. W., Wang, Y. N. (1995) The phase transition and transport properties of Sr0.56C60O1.5. Applied Physics Letters, 67 (23). 3417-3419 doi:10.1063/1.115265
Zyung, Taehyoung, Kim, Jang‐Joo (1995) Photodegradation of poly(p ‐ phenylenevinylene) by laser light at the peak wavelength of electroluminescence. Applied Physics Letters, 67 (23). 3420-3422 doi:10.1063/1.115266
Kojima, Kazuo, Yoshida, Shiro, Shiraishi, Haruki, Maegawa, Akira (1995) Green upconversion fluorescence in Er3+‐doped Ta2O5 heated gel. Applied Physics Letters, 67 (23). 3423-3425 doi:10.1063/1.115267
Li, Xiaodong, Kim, Byoung‐Youp, Rhee, Shi‐Woo (1995) Structural characterization of aluminum films deposited on sputtered‐titanium nitride/silicon substrate by metalorganic chemical vapor deposition from dimethylethylamine alane. Applied Physics Letters, 67 (23). 3426-3428 doi:10.1063/1.115268
Temst, K., Van Bael, M. J., Wuyts, B., Van Haesendonck, C., Bruynseraede, Y., de Groot, D. G., Koeman, N., Griessen, R. (1995) Roughness in Nb/Cu multilayers determined by x‐ray diffraction and atomic force microscopy. Applied Physics Letters, 67 (23). 3429-3431 doi:10.1063/1.115269
Shen, W. Z., Shen, S. C., Tang, W. G., Zhao, Y., Li, A. Z. (1995) Optical investigation of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells. Applied Physics Letters, 67 (23). 3432-3434 doi:10.1063/1.115270
Sudarshan, T. S., Gradinaru, G., Korony, G., Mitchel, W., Hopkins, R. H. (1995) High field effects in high resistivity silicon carbide in lateral configurations. Applied Physics Letters, 67 (23). 3435-3437 doi:10.1063/1.115271
Choi, W. J., Lee, S., Kim, Y., Woo, D., Kim, S. K., Kim, S. H., Lee, J. I., Kang, K. N., Chu, J. H., Yu, S. K., Seo, J. C., Kim, D., Cho, K. (1995) Carrier lifetimes in dielectric cap disordered GaAs/AlGaAs multiple quantum well with SiN capping layers. Applied Physics Letters, 67 (23). 3438-3440 doi:10.1063/1.115272
Skouri, El Mostafa, Martin, Patrick, Chusseau, Laurent, Alibert, Claude, Coriasso, Claudio, Campi, Domenico, Cacciatore, Carmelo (1995) Measurement of the refractive index of GaInAs/InP quantum wells by a grating coupling technique. Applied Physics Letters, 67 (23). 3441-3443 doi:10.1063/1.115273
Sakaki, H., Yusa, G., Someya, T., Ohno, Y., Noda, T., Akiyama, H., Kadoya, Y., Noge, H. (1995) Transport properties of two‐dimensional electron gas in AlGaAs/GaAs selectively doped heterojunctions with embedded InAs quantum dots. Applied Physics Letters, 67 (23). 3444-3446 doi:10.1063/1.115274
Bisero, D., Corni, F., Nobili, C., Tonini, R., Ottaviani, G., Mazzoleni, C., Pavesi, L. (1995) Visible photoluminescence from He‐implanted silicon. Applied Physics Letters, 67 (23). 3447-3449 doi:10.1063/1.115275
Bevan, M. J., Chen, M. C., Shih, H. D. (1995) High‐quality p ‐ type Hg1−xCdxTe prepared by metalorganic chemical vapor deposition. Applied Physics Letters, 67 (23). 3450-3452 doi:10.1063/1.115276
Langerak, C. J. G. M., Murdin, B. N., Cole, B. E., Chamberlain, J. M., Henini, M., Pate, M., Hill, G. (1995) Terahertz response of zero‐dimensional states in resonant tunneling diodes. Applied Physics Letters, 67 (23). 3453-3455 doi:10.1063/1.115277
Kerkel, K., Oshinowo, J., Forchel, A., Weber, J., Zielinski, E. (1995) Lateral quantization effects in modulated barrier InGaAs/InP quantum wires. Applied Physics Letters, 67 (23). 3456-3458 doi:10.1063/1.115278
Mantl, S., Dolle, M., Mesters, St., Fichtner, P. F. P., Bay, H. L. (1995) Patterning method for silicides based on local oxidation. Applied Physics Letters, 67 (23). 3459-3461 doi:10.1063/1.115246
Wu, L., Boucaud, P., Lourtioz, J.‐M., Julien, F. H., Sagnes, I., Campidelli, Y., Badoz, P.‐A. (1995) Absorption and resonant dispersion associated with normal incidence intersubband transitions in Si/SiGe quantum wells. Applied Physics Letters, 67 (23). 3462-3464 doi:10.1063/1.115247
Ganikhanov, Feruz, Lin, Gong‐Ru, Chen, Wen‐Chung, Chang, C.‐S., Pan, Ci‐Ling (1995) Subpicosecond carrier lifetimes in arsenic‐ion‐implanted GaAs. Applied Physics Letters, 67 (23). 3465-3467 doi:10.1063/1.115248
Siamchai, Pavan, Konagai, Makoto (1995) Degradation behavior of amorphous silicon solar cells fabricated by mercury‐sensitized photochemical vapor deposition with hydrogen dilution. Applied Physics Letters, 67 (23). 3468-3470 doi:10.1063/1.115249
Yan, Feng, Bao, Xi‐mao, Wu, Xiao‐wei, Chen, Hui‐lan (1995) Photoluminescence spectra of C60 molecules embedded in porous Si. Applied Physics Letters, 67 (23). 3471-3473 doi:10.1063/1.115250
Galun, E., Cohen, H., Margulis, L., Vilan, A., Tsirlina, T., Hodes, G., Tenne, R., Hershfinkel, M., Jaegermann, W., Ellmer, K. (1995) Crystallization of layered metal‐dichalcogenides films on amorphous substrates. Applied Physics Letters, 67 (23). 3474-3476 doi:10.1063/1.115251
Yang, Chien Kuo, Lee, Chung Len, Lei, Tan Fu, Chern, Horng Nan (1995) Radiation effects on n‐channel polycrystalline silicon thin‐film transistors. Applied Physics Letters, 67 (23). 3477-3479 doi:10.1063/1.115252
Mansour, N. S., Sirenko, Yu. M., Kim, K. W., Littlejohn, M. A., Wang, J., Leburton, J. P. (1995) Carrier capture in cylindrical quantum wires. Applied Physics Letters, 67 (23). 3480-3482 doi:10.1063/1.115253
Hirasawa, M., Ichikawa, N., Egashira, Y., Honma, I., Komiyama, H. (1995) Synthesis of GaAs nanoparticles by digital radio frequency sputtering. Applied Physics Letters, 67 (23). 3483-3485 doi:10.1063/1.115254
Bringuier, E., Briot, O. (1995) High‐field direct‐current conduction in epitaxial ZnS films. Applied Physics Letters, 67 (23). 3486-3488 doi:10.1063/1.115255
Satake, Hideki, Toriumi, Akira (1995) Common origin for stress‐induced leakage current and electron trap generation in SiO2. Applied Physics Letters, 67 (23). 3489-3490 doi:10.1063/1.115256
Chang, J. C. P., Woodall, J. M., Melloch, M. R., Lahiri, I., Nolte, D. D., Li, N. Y., Tu, C. W. (1995) Investigation of interface intermixing and roughening in low‐temperature‐grown AlAs/GaAs multiple quantum wells during thermal annealing by chemical lattice imaging and x‐ray diffraction. Applied Physics Letters, 67 (23). 3491-3493 doi:10.1063/1.115257
Gupta, A., McGuire, T. R., Duncombe, P. R., Rupp, M., Sun, J. Z., Gallagher, W. J., Xiao, Gang (1995) Growth and giant magnetoresistance properties of La‐deficient LaxMnO3−δ (0.67≤x≤1) films. Applied Physics Letters, 67 (23). 3494-3496 doi:10.1063/1.115258
Pakhomov, A. B., Yan, X., Zhao, B. (1995) Giant Hall effect in percolating ferromagnetic granular metal‐insulator films. Applied Physics Letters, 67 (23). 3497-3499 doi:10.1063/1.115259
Martinet, C., Devine, R. A. B. (1995) Low‐temperature oxidation of Si in a microwave electron cyclotron resonance excited O2 plasma. Applied Physics Letters, 67 (23). 3500-3502 doi:10.1063/1.115260
Chen, Yan‐Feng, Sun, Li, Yu, Tao, Chen, Jian‐Xie, Ming, Nai‐Ben, Ding, De‐Sheng, Wang, Lian‐Wei (1995) Single‐crystalline, single‐domain epitaxy of PbTiO3 thin films by metalorganic chemical vapor deposition. Applied Physics Letters, 67 (23). 3503-3505 doi:10.1063/1.115261

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