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Smith, M., Chen, G. D., Li, J. Z., Lin, J. Y., Jiang, H. X., Salvador, A., Kim, W. K., Aktas, O., Botchkarev, A., Morkoç, H. (1995) Excitonic recombination in GaN grown by molecular beam epitaxy. Applied Physics Letters, 67 (23). 3387-3389 doi:10.1063/1.114902

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Reference TypeJournal (article/letter/editorial)
TitleExcitonic recombination in GaN grown by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsSmith, M.Author
Chen, G. D.Author
Li, J. Z.Author
Lin, J. Y.Author
Jiang, H. X.Author
Salvador, A.Author
Kim, W. K.Author
Aktas, O.Author
Botchkarev, A.Author
Morkoç, H.Author
Year1995 (December 4)Volume67
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.114902Search in ResearchGate
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Mindat Ref. ID8514897Long-form Identifiermindat:1:5:8514897:6
GUID0
Full ReferenceSmith, M., Chen, G. D., Li, J. Z., Lin, J. Y., Jiang, H. X., Salvador, A., Kim, W. K., Aktas, O., Botchkarev, A., Morkoç, H. (1995) Excitonic recombination in GaN grown by molecular beam epitaxy. Applied Physics Letters, 67 (23). 3387-3389 doi:10.1063/1.114902
Plain TextSmith, M., Chen, G. D., Li, J. Z., Lin, J. Y., Jiang, H. X., Salvador, A., Kim, W. K., Aktas, O., Botchkarev, A., Morkoç, H. (1995) Excitonic recombination in GaN grown by molecular beam epitaxy. Applied Physics Letters, 67 (23). 3387-3389 doi:10.1063/1.114902
In(1995, December) Applied Physics Letters Vol. 67 (23) AIP Publishing

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Smith, M., Chen, G. D., Lin, J. Y., Jiang, H. X., Salvador, A., Sverdlov, B. N., Botchkarev, A., Morkoç, H. (1995) Dynamics of a band‐edge transition in GaN grown by molecular beam epitaxy. Applied Physics Letters, 66 (25). 3474-3476 doi:10.1063/1.113768
Smith, M., Lin, J. Y., Jiang, H. X., Salvador, A., Botchkarev, A., Kim, W., Morkoc, H. (1996) Optical transitions in GaN/AlxGa1−xN multiple quantum wells grown by molecular beam epitaxy. Applied Physics Letters, 69 (17). 2453-2455 doi:10.1063/1.117495
Zhu, Q., Botchkarev, A., Kim, W., Aktas, Ö., Salvador, A., Sverdlov, B., Morkoç, H., Tsen, S.‐C. Y., Smith, David J. (1996) Structural properties of GaN films grown on sapphire by molecular beam epitaxy. Applied Physics Letters, 68 (8). 1141-1143 doi:10.1063/1.115739
Schmidt, T. J., Yang, X. H., Shan, W., Song, J. J., Salvador, A., Kim, W., Aktas, Ö., Botchkarev, A., Morkoç, H. (1996) Room‐temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy. Applied Physics Letters, 68 (13). 1820-1822 doi:10.1063/1.116024
Salvador, A., Kim, W., Aktas, Ö., Botchkarev, A., Fan, Z., Morkoç, H. (1996) Near ultraviolet luminescence of Be doped GaN grown by reactive molecular beam epitaxy using ammonia. Applied Physics Letters, 69 (18). 2692-2694 doi:10.1063/1.117680
Smith, David J., Chandrasekhar, D., Sverdlov, B., Botchkarev, A., Salvador, A., Morkoç, H. (1995) Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma‐enhanced molecular beam epitaxy. Applied Physics Letters, 67 (13). 1830-1832 doi:10.1063/1.115417
Popovici, G., Xu, G. Y., Botchkarev, A., Kim, W., Tang, H., Salvador, A., Morkoç, H., Strange, R., White, J. O. (1997) Raman scattering and photoluminescence of Mg-doped GaN films grown by molecular beam epitaxy. Journal of Applied Physics, 82 (8). 4020-4023 doi:10.1063/1.365711
Reynolds, D. C., Look, D. C., Kim, W., Aktas, Ö., Botchkarev, A., Salvador, A., Morkoç, H., Talwar, D. N. (1996) Ground and excited state exciton spectra from GaN grown by molecular‐beam epitaxy. Journal of Applied Physics, 80 (1). 594-596 doi:10.1063/1.362724
Salvador, A., Liu, G., Kim, W., Aktas, Ö., Botchkarev, A., Morkoç, H. (1995) Properties of a Si doped GaN/AlGaN single quantum well. Applied Physics Letters, 67 (22). 3322-3324 doi:10.1063/1.115234
Fang, Z-Q., Look, D. C., Kim, W., Fan, Z., Botchkarev, A., Morkoç, H. (1998) Deep centers in n-GaN grown by reactive molecular beam epitaxy. Applied Physics Letters, 72 (18). 2277-2279 doi:10.1063/1.121274
Kim, Wook, Salvador, A., Botchkarev, A. E., Aktas, O., Mohammad, S. N., Morcoç, H. (1996) Mg‐doped p‐type GaN grown by reactive molecular beam epitaxy. Applied Physics Letters, 69 (4). 559-561 doi:10.1063/1.117786
 
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