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O’Donnell, K. P., Breitkopf, T., Kalt, H., Van der Stricht, W., Moerman, I., Demeester, P., Middleton, P. G. (1997) Optical linewidths of InGaN light emitting diodes and epilayers. Applied Physics Letters, 70 (14). 1843-1845 doi:10.1063/1.118728

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Reference TypeJournal (article/letter/editorial)
TitleOptical linewidths of InGaN light emitting diodes and epilayers
JournalApplied Physics Letters
AuthorsO’Donnell, K. P.Author
Breitkopf, T.Author
Kalt, H.Author
Van der Stricht, W.Author
Moerman, I.Author
Demeester, P.Author
Middleton, P. G.Author
Year1997 (April 7)Volume70
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.118728Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8518384Long-form Identifiermindat:1:5:8518384:5
GUID0
Full ReferenceO’Donnell, K. P., Breitkopf, T., Kalt, H., Van der Stricht, W., Moerman, I., Demeester, P., Middleton, P. G. (1997) Optical linewidths of InGaN light emitting diodes and epilayers. Applied Physics Letters, 70 (14). 1843-1845 doi:10.1063/1.118728
Plain TextO’Donnell, K. P., Breitkopf, T., Kalt, H., Van der Stricht, W., Moerman, I., Demeester, P., Middleton, P. G. (1997) Optical linewidths of InGaN light emitting diodes and epilayers. Applied Physics Letters, 70 (14). 1843-1845 doi:10.1063/1.118728
In(1997, April) Applied Physics Letters Vol. 70 (14) AIP Publishing

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O’Donnell, K. P., Middleton, P. G., Trager-Cowan, C., Young, C., Bayliss, S. C., Fletcher, I., Van der Stricht, W., Moerman, I., Demeester, P. (1998) Energy-dispersive x-ray imaging of an InGaN/GaN bilayer on sapphire. Applied Physics Letters, 73 (22). 3273-3275 doi:10.1063/1.122742
Martin, R. W., Middleton, P. G., O’Donnell, K. P., Van der Stricht, W. (1999) Exciton localization and the Stokes’ shift in InGaN epilayers. Applied Physics Letters, 74 (2). 263-265 doi:10.1063/1.123275
De Neve, H., Blondelle, J., Van Daele, P., Demeester, P., Baets, R., Borghs, G. (1997) Recycling of guided mode light emission in planar microcavity light emitting diodes. Applied Physics Letters, 70 (7). 799-801 doi:10.1063/1.118226
Duxbury, N., Bangert, U., Dawson, P., Thrush, E. J., Van der Stricht, W., Jacobs, K., Moerman, I. (2000) Indium segregation in InGaN quantum-well structures. Applied Physics Letters, 76 (12). 1600-1602 doi:10.1063/1.126108
Van der Stricht, W., Moerman, I., Demeester, P., Crawley, J.A, Thrush, E.J. (1997) Study of GaN and InGaN films grown by metalorganic chemical vapour deposition. Journal of Crystal Growth, 170 (1). 344-348 doi:10.1016/s0022-0248(96)00595-7
Ruterana, P., Nouet, G., Van der Stricht, W., Moerman, I., Considine, L. (1998) Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy. Applied Physics Letters, 72 (14). 1742-1744 doi:10.1063/1.121170
Hide, Fumitomo, Kozodoy, Peter, DenBaars, Steven P., Heeger, Alan J. (1997) White light from InGaN/conjugated polymer hybrid light-emitting diodes. Applied Physics Letters, 70 (20). 2664-2666 doi:10.1063/1.118989
Gommans, H. H. P., Denier van der Gon, A. W., Andersson, G. G., van IJzendoorn, L. J., Pijper, R. M. T., Brongersma, H. H. (2003) Interface formation in K doped poly(dialkoxy-p-phenylene vinylene) light-emitting diodes. Journal of Applied Physics, 94 (9). 5756-5762 doi:10.1063/1.1614864
Nistor, L., Bender, H., Vantomme, A., Wu, M. F., Van Landuyt, J., O’Donnell, K. P., Martin, R., Jacobs, K., Moerman, I. (2000) Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer. Applied Physics Letters, 77 (4). 507-509 doi:10.1063/1.127026
Cahill, R., Maaskant, P. P., Akhter, M., Corbett, B. (2019) High power surface emitting InGaN superluminescent light-emitting diodes. Applied Physics Letters, 115 (17). 171102pp. doi:10.1063/1.5118953
Song, Y.-K., Diagne, M., Zhou, H., Nurmikko, A. V., Schneider, R. P., Takeuchi, T. (2000) Resonant-cavity InGaN quantum-well blue light-emitting diodes. Applied Physics Letters, 77 (12). 1744pp. doi:10.1063/1.1310625
 
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