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Ruterana, P., Nouet, G., Van der Stricht, W., Moerman, I., Considine, L. (1998) Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy. Applied Physics Letters, 72 (14). 1742-1744 doi:10.1063/1.121170

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Reference TypeJournal (article/letter/editorial)
TitleChemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsRuterana, P.Author
Nouet, G.Author
Van der Stricht, W.Author
Moerman, I.Author
Considine, L.Author
Year1998 (April 6)Volume72
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.121170Search in ResearchGate
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Mindat Ref. ID8520802Long-form Identifiermindat:1:5:8520802:9
GUID0
Full ReferenceRuterana, P., Nouet, G., Van der Stricht, W., Moerman, I., Considine, L. (1998) Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy. Applied Physics Letters, 72 (14). 1742-1744 doi:10.1063/1.121170
Plain TextRuterana, P., Nouet, G., Van der Stricht, W., Moerman, I., Considine, L. (1998) Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy. Applied Physics Letters, 72 (14). 1742-1744 doi:10.1063/1.121170
In(1998, April) Applied Physics Letters Vol. 72 (14) AIP Publishing

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Cho, H. K., Lee, J. Y., Kim, K. S., Yang, G. M. (2000) Superlattice-like stacking fault and phase separation of InxGa1−xN grown on sapphire substrate by metalorganic chemical vapor deposition. Applied Physics Letters, 77 (2). 247-249 doi:10.1063/1.126939
O’Donnell, K. P., Middleton, P. G., Trager-Cowan, C., Young, C., Bayliss, S. C., Fletcher, I., Van der Stricht, W., Moerman, I., Demeester, P. (1998) Energy-dispersive x-ray imaging of an InGaN/GaN bilayer on sapphire. Applied Physics Letters, 73 (22). 3273-3275 doi:10.1063/1.122742
Grandjean, N., Massies, J., Leroux, M., De Mierry, P. (1998) Band edge versus deep luminescence of InxGa1−xN layers grown by molecular beam epitaxy. Applied Physics Letters, 72 (24). 3190-3192 doi:10.1063/1.121589
Schulze, F., Bläsing, J., Dadgar, A., Krost, A. (2003) Time-delayed indium incorporation in ultrathin (InxGa1−xN/GaN) multiple quantum wells grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 82 (25). 4558-4560 doi:10.1063/1.1586472
Armitage, R., Hirayama, H. (2008) M-plane GaN grown on m-sapphire by metalorganic vapor phase epitaxy. Applied Physics Letters, 92 (9). 92121pp. doi:10.1063/1.2894509
Hahn, B., Preis, H., Blümel, S., Gebhardt, W. (1998) Hydrogen effusion from epitaxial ZnSe layers grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 73 (11). 1556-1558 doi:10.1063/1.122203
Cheng, Lisen, Zhou, Kuan, Zhang, Ze, Zhang, Guoyi, Yang, Zhijian, Tong, Yuzhen (1999) Occurrence of cubic GaN and strain relaxation in GaN buffer layers grown by low-pressure metalorganic vapor phase epitaxy on (0001) sapphire substrates. Applied Physics Letters, 74 (5). 661-663 doi:10.1063/1.122979
Ruterana, P., De Saint Jores, G., Laügt, M., Omnes, F., Bellet-Amalric, E. (2001) Evidence for multiple chemical ordering in AlGaN grown by metalorganic chemical vapor deposition. Applied Physics Letters, 78 (3). 344-346 doi:10.1063/1.1340867
Chichibu, Shigefusa (1997) Room-temperature near-band-edge photoluminescence from CuInSe2 heteroepitaxial layers grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 70 (14). 1840-1842 doi:10.1063/1.118708
Bellon, P., Chevalier, J. P., Martin, G. P., Dupont‐Nivet, E., Thiebaut, C., André, J. P. (1988) Chemical ordering in GaxIn1−xP semiconductor alloy grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 52 (7). 567-569 doi:10.1063/1.99419
O’Donnell, K. P., Breitkopf, T., Kalt, H., Van der Stricht, W., Moerman, I., Demeester, P., Middleton, P. G. (1997) Optical linewidths of InGaN light emitting diodes and epilayers. Applied Physics Letters, 70 (14). 1843-1845 doi:10.1063/1.118728
 
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