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(1998, April) Applied Physics Letters Vol. 72 (14) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1998 (April)Volume72
Issue<   14   >
PublisherAIP Publishing
Mindat Ref. ID8520778Long-form Identifiermindat:1:5:8520778:3
GUID0
Full Reference(1998, April) Applied Physics Letters Vol. 72 (14) AIP Publishing
Plain Text(1998, April) Applied Physics Letters Vol. 72 (14) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 72. AIP Publishing

Contains

Panarin, Yu. P., Kalinovskaya, O., Vij, J. K. (1998) The investigation of the relaxation processes in antiferroelectric liquid crystals by electro-optic spectroscopy. Applied Physics Letters, 72 (14). 1667-1669 doi:10.1063/1.121147
Graham, L. A., Huffaker, D. L., Deng, Q., Deppe, D. G. (1998) Controlled spontaneous lifetime in microcavity confined InGaAlAs/GaAs quantum dots. Applied Physics Letters, 72 (14). 1670-1672 doi:10.1063/1.121148
Matveev, O. I., Smith, B. W., Winefordner, J. D. (1998) A low pressure mercury vapor resonance ionization image detector. Applied Physics Letters, 72 (14). 1673-1675 doi:10.1063/1.121149
Bloemer, Mark J., Scalora, Michael (1998) Transmissive properties of Ag/MgF2 photonic band gaps. Applied Physics Letters, 72 (14). 1676-1678 doi:10.1063/1.121150
Hendrickx, E., Herlocker, J., Maldonado, J. L., Marder, S. R., Kippelen, B., Persoons, A., Peyghambarian, N. (1998) Thermally stable high-gain photorefractive polymer composites based on a tri-functional chromophore. Applied Physics Letters, 72 (14). 1679-1681 doi:10.1063/1.121187
Liu, H. C., Buchanan, M., Wasilewski, Z. R. (1998) How good is the polarization selection rule for intersubband transitions?. Applied Physics Letters, 72 (14). 1682-1684 doi:10.1063/1.121151
Srivastava, Anchal, Srivastava, A. K., Srivastava, O. N. (1998) Effect of external electric field on the growth of nanotubules. Applied Physics Letters, 72 (14). 1685-1687 doi:10.1063/1.121152
Guan, Z. P., Kuang, G. K., Griebl, E., Kastner, M., Gebhardt, W. (1998) Localized excitonic transitions in a ZnSe-Zn0.75Cd0.25Se double-superlattice grown by molecular beam epitaxy. Applied Physics Letters, 72 (14). 1688-1690 doi:10.1063/1.121153
Solozhenko, Vladimir L., Häusermann, Daniel, Mezouar, Mohamed, Kunz, Martin (1998) Equation of state of wurtzitic boron nitride to 66 GPa. Applied Physics Letters, 72 (14). 1691-1693 doi:10.1063/1.121186
Wijewarnasuriya, P. S., Sivananthan, S. (1998) Arsenic incorporation in HgCdTe grown by molecular beam epitaxy. Applied Physics Letters, 72 (14). 1694-1696 doi:10.1063/1.121154
Fompeyrine, J., Berger, R., Lang, H. P., Perret, J., Mächler, E., Gerber, Ch., Locquet, J.-P. (1998) Local determination of the stacking sequence of layered materials. Applied Physics Letters, 72 (14). 1697-1699 doi:10.1063/1.121155
Aguilar-Frutis, M., Garcia, M., Falcony, C. (1998) Optical and electrical properties of aluminum oxide films deposited by spray pyrolysis. Applied Physics Letters, 72 (14). 1700-1702 doi:10.1063/1.121156
Weinstein, Marcie G., Song, C. Y., Stavola, Michael, Pearton, S. J., Wilson, R. G., Shul, R. J., Killeen, K. P., Ludowise, M. J. (1998) Hydrogen-decorated lattice defects in proton implanted GaN. Applied Physics Letters, 72 (14). 1703-1705 doi:10.1063/1.121157
Sun, Chang Q. (1998) A model of bonding and band-forming for oxides and nitrides. Applied Physics Letters, 72 (14). 1706-1708 doi:10.1063/1.121158
Chang, R. D., Choi, P. S., Kwong, D. L., Wristers, D., Chu, P. K. (1998) Boron segregation in As-implanted Si caused by electric field and transient enhanced diffusion. Applied Physics Letters, 72 (14). 1709-1711 doi:10.1063/1.121159
Neves, B. R. A., Andrade, M. S., Rodrigues, W. N., Sáfar, G. A. M., Moreira, M. V. B., de Oliveira, A. G. (1998) Coherent-to-incoherent transition in surfactant mediated growth of InAs quantum dots. Applied Physics Letters, 72 (14). 1712-1714 doi:10.1063/1.121160
Miyata, Noriyuki, Watanabe, Heiji, Ichikawa, Masakazu (1998) Preservation of atomic flatness at SiO2/Si(111) interfaces during thermal oxidation in a furnace. Applied Physics Letters, 72 (14). 1715-1717 doi:10.1063/1.121161
Currie, M. T., Samavedam, S. B., Langdo, T. A., Leitz, C. W., Fitzgerald, E. A. (1998) Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing. Applied Physics Letters, 72 (14). 1718-1720 doi:10.1063/1.121162
Mogul, H. C., Cong, L., Wallace, R. M., Chen, P. J., Rost, T. A., Harvey, K. (1998) Electrical and physical characterization of deuterium sinter on submicron devices. Applied Physics Letters, 72 (14). 1721-1723 doi:10.1063/1.121163
Overend, N., Nogaret, A., Gallagher, B. L., Main, P. C., Henini, M., Marrows, C. H., Howson, M. A., Beaumont, S. P. (1998) Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices. Applied Physics Letters, 72 (14). 1724-1726 doi:10.1063/1.121164
Chen, Huajie, Feenstra, R. M., Goldman, R. S., Silfvenius, C., Landgren, G. (1998) Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy. Applied Physics Letters, 72 (14). 1727-1729 doi:10.1063/1.121165
McCluskey, M. D., Romano, L. T., Krusor, B. S., Bour, D. P., Johnson, N. M., Brennan, S. (1998) Phase separation in InGaN/GaN multiple quantum wells. Applied Physics Letters, 72 (14). 1730-1732 doi:10.1063/1.121166
Korotchenkov, O. A., Goto, T. (1998) Acoustically driven bound exciton lifetimes in CdS crystals. Applied Physics Letters, 72 (14). 1733-1735 doi:10.1063/1.121167
Hirayama, Hideki, Tanaka, Satoru, Ramvall, Peter, Aoyagi, Yoshinobu (1998) Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces. Applied Physics Letters, 72 (14). 1736-1738 doi:10.1063/1.121168
Akyüz, C. D., Zaslavsky, A., Freund, L. B., Syphers, D. A., Sedgwick, T. O. (1998) Inhomogeneous strain in individual quantum dots probed by transport measurements. Applied Physics Letters, 72 (14). 1739-1741 doi:10.1063/1.121169
Ruterana, P., Nouet, G., Van der Stricht, W., Moerman, I., Considine, L. (1998) Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy. Applied Physics Letters, 72 (14). 1742-1744 doi:10.1063/1.121170
Hirayama, Y., Muraki, K., Saku, T. (1998) Two-dimensional electron gas formed in a back-gated undoped heterostructure. Applied Physics Letters, 72 (14). 1745-1747 doi:10.1063/1.121171
Sugiura, Lisa, Suzuki, Mariko, Nishio, Johji (1998) p-type conduction in as-grown Mg-doped GaN grown by metalorganic chemical vapor deposition. Applied Physics Letters, 72 (14). 1748-1750 doi:10.1063/1.121172
Lei, X. L., Dong, B. (1998) Enhancement of acoustic- and optic-phonon generation by terahertz radiations in a two-dimensional electron system. Applied Physics Letters, 72 (14). 1751-1753 doi:10.1063/1.121173
Chao, L.-L., Cargill, G. S., Marshall, T., Snoeks, E., Petruzzello, J., Pashley, M. (1998) Spectral shifts associated with dark line defects in degraded II-VI laser diodes. Applied Physics Letters, 72 (14). 1754-1756 doi:10.1063/1.121174
Lee, Jae-Gyoung, Kim, Youngkyoo, Jang, Sei-Hum, Kwon, Soon-Nam, Jeong, Kwangho (1998) Mixing effect of chelate complex and metal in organic light-emitting diodes. Applied Physics Letters, 72 (14). 1757-1759 doi:10.1063/1.121175
Barbanera, S., Castellano, M. G., Torrioli, G., Cirillo, M. (1998) A probe for the investigation of the superconducting metastable state in YBa2Cu3O7−x step-edge junctions. Applied Physics Letters, 72 (14). 1760-1762 doi:10.1063/1.121176
Jia, Q. X., Findikoglu, A. T., Arendt, P., Foltyn, S. R., Roper, J. M., Groves, J. R., Coulter, J. Y., Li, Y. Q., Dionne, G. F. (1998) Superconducting YBa2Cu3O7−x thin films on polycrystalline ferrite for magnetically tunable microwave components. Applied Physics Letters, 72 (14). 1763-1765 doi:10.1063/1.121177
Kang, B. W., Gapud, A. A., Fei, X., Aytug, T., Wu, J. Z. (1998) Minimization of detrimental effect of air in HgBa2CaCu2O6+δ thin film processing. Applied Physics Letters, 72 (14). 1766-1768 doi:10.1063/1.121178
Nesher, O., Koren, G., Polturak, E., Deutscher, G. (1998) Proximity effect in bilayer films of YBa2Cu2.7Fe0.3Oy and YBa2Cu3O7−δ. Applied Physics Letters, 72 (14). 1769-1771 doi:10.1063/1.121179
Usagawa, Toshiyuki, Ishimaru, Yoshihiro, Wen, Jianguo, Utagawa, Tadashi, Koyama, Satoshi, Enomoto, Youichi (1998) Nonlinear I–V characteristics and proximity effects for PrBa2Cu3O7−δ/YBa2Cu3O7−δ bilayered structures grown on (001) YBa2Cu3O7−δ single crystal substrates. Applied Physics Letters, 72 (14). 1772-1774 doi:10.1063/1.121180
O’Donnell, J., Rzchowski, M. S., Eckstein, J. N., Bozovic, I. (1998) Magnetoelastic coupling and magnetic anisotropy in La0.67Ca0.33MnO3 films. Applied Physics Letters, 72 (14). 1775-1777 doi:10.1063/1.121181
Vlahacos, C. P., Steinhauer, D. E., Dutta, S. K., Feenstra, B. J., Anlage, Steven M., Wellstood, F. C. (1998) Quantitative topographic imaging using a near-field scanning microwave microscope. Applied Physics Letters, 72 (14). 1778-1780 doi:10.1063/1.121182
Rampi, Maria A., Schueller, Olivier J. A., Whitesides, George M. (1998) Alkanethiol self-assembled monolayers as the dielectric of capacitors with nanoscale thickness. Applied Physics Letters, 72 (14). 1781-1783 doi:10.1063/1.121183
Fu, Liwei, Liu, Kun, Zhang, Bo, Chu, Junhao, Wang, Hong, Wang, Min (1998) Capacitance–voltage characteristics of Bi4Ti3O12/p-Si interface. Applied Physics Letters, 72 (14). 1784-1786 doi:10.1063/1.121184
Tsai, Huei-Mei, Lin, Pang, Tseng, Tseung-Yuen (1998) Sr0.8Bi2.5Ta1.2Nb0.9O9+x ferroelectric thin films prepared by two-target off-axis radio frequency magnetron sputtering. Applied Physics Letters, 72 (14). 1787-1789 doi:10.1063/1.120571

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