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Chang, R. D., Choi, P. S., Kwong, D. L., Wristers, D., Chu, P. K. (1998) Boron segregation in As-implanted Si caused by electric field and transient enhanced diffusion. Applied Physics Letters, 72 (14). 1709-1711 doi:10.1063/1.121159

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Reference TypeJournal (article/letter/editorial)
TitleBoron segregation in As-implanted Si caused by electric field and transient enhanced diffusion
JournalApplied Physics Letters
AuthorsChang, R. D.Author
Choi, P. S.Author
Kwong, D. L.Author
Wristers, D.Author
Chu, P. K.Author
Year1998 (April 6)Volume72
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.121159Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8520791Long-form Identifiermindat:1:5:8520791:4
GUID0
Full ReferenceChang, R. D., Choi, P. S., Kwong, D. L., Wristers, D., Chu, P. K. (1998) Boron segregation in As-implanted Si caused by electric field and transient enhanced diffusion. Applied Physics Letters, 72 (14). 1709-1711 doi:10.1063/1.121159
Plain TextChang, R. D., Choi, P. S., Kwong, D. L., Wristers, D., Chu, P. K. (1998) Boron segregation in As-implanted Si caused by electric field and transient enhanced diffusion. Applied Physics Letters, 72 (14). 1709-1711 doi:10.1063/1.121159
In(1998, April) Applied Physics Letters Vol. 72 (14) AIP Publishing

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Zhang, L. H., Jones, K. S., Chi, P. H., Simons, D. S. (1995) Transient enhanced diffusion without {311} defects in low energy B+ā€implanted silicon. Applied Physics Letters, 67 (14). 2025-2027 doi:10.1063/1.114775
Krishnamoorthy, V., Moller, K., Jones, K. S., Venables, D., Jackson, J., Rubin, L. (1998) Transient enhanced diffusion and defect microstructure in high dose, low energy As+ implanted Si. Journal of Applied Physics, 84 (11). 5997-6002 doi:10.1063/1.368896
Kim, Y. M., Lo, G. Q., Kwong, D. L., Tseng, H. H., Hance, R. (1989) Anomalous transient diffusion of boron implanted into preamorphized Si during rapid thermal annealing. Applied Physics Letters, 55 (22). 2316-2318 doi:10.1063/1.102048
Wristers, D., Han, L. K., Chen, T., Wang, H. H., Kwong, D. L., Allen, M., Fulford, J. (1996) Degradation of oxynitride gate dielectric reliability due to boron diffusion. Applied Physics Letters, 68 (15). 2094-2096 doi:10.1063/1.115595
Ku, Y. H., Lee, S. K., Kwong, D. L., Chu, P. (1989) Shallow, silicidedp+/njunction formation and dopant diffusion in SiO2/TiSi2/Si structure. Applied Physics Letters, 54 (17). 1684-1686 doi:10.1063/1.101432
Kwor, R., Kwong, D. L., Yeo, Y. K. (1984) Rapid thermal annealing characteristics of As+ā€ and BF+2ā€implanted Si. Applied Physics Letters, 45 (1). 77-79 doi:10.1063/1.94975
Kavanagh, K. L., Chang, J. C. P., Kirchner, P. D., Warren, A. C., Woodall, J. M. (1993) Si diffusion and segregation in lowā€temperature grown GaAs. Applied Physics Letters, 62 (3). 286-288 doi:10.1063/1.108992
Kim, Y. M., Lo, G. Q., Kwong, D. L., Tasch, A. F., Novak, S. (1990) Extended defect evolution in boronā€implanted Si during rapid thermal annealing and its effects on the anomalous boron diffusion. Applied Physics Letters, 56 (13). 1254-1256 doi:10.1063/1.102529
Kinoshita, H., Kwong, D. L. (1992) Kinetic diffusion model of ionā€implanted boron during rapid thermal annealing. Applied Physics Letters, 60 (10). 1202-1204 doi:10.1063/1.107405
Fan, D., Huang, J., Jaccodine, R. J., Kahora, P., Stevie, F. (1987) Enhanced tail diffusion of ion implanted boron in silicon. Applied Physics Letters, 50 (24). 1745-1747 doi:10.1063/1.97735
Kim, K. M., Mei, S. N., Saccamango, M. J., Chu, S. F., von Gutfeld, R. J., Vigliotti, D. R. (1992) Laserā€driven boron diffusion into a Si epitaxial layer from a p+ boronā€doped Si substrate. Applied Physics Letters, 61 (9). 1066-1068 doi:10.1063/1.107718
 
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