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Dang, X. Z., Wang, C. D., Yu, E. T., Boutros, K. S., Redwing, J. M. (1998) Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures. Applied Physics Letters, 72 (21). 2745-2747 doi:10.1063/1.121077

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Reference TypeJournal (article/letter/editorial)
TitlePersistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures
JournalApplied Physics Letters
AuthorsDang, X. Z.Author
Wang, C. D.Author
Yu, E. T.Author
Boutros, K. S.Author
Redwing, J. M.Author
Year1998 (May 25)Volume72
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.121077Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8521134Long-form Identifiermindat:1:5:8521134:2
GUID0
Full ReferenceDang, X. Z., Wang, C. D., Yu, E. T., Boutros, K. S., Redwing, J. M. (1998) Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures. Applied Physics Letters, 72 (21). 2745-2747 doi:10.1063/1.121077
Plain TextDang, X. Z., Wang, C. D., Yu, E. T., Boutros, K. S., Redwing, J. M. (1998) Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures. Applied Physics Letters, 72 (21). 2745-2747 doi:10.1063/1.121077
In(1998, May) Applied Physics Letters Vol. 72 (21) AIP Publishing

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Dang, X. Z., Asbeck, P. M., Yu, E. T., Sullivan, G. J., Chen, M. Y., McDermott, B. T., Boutros, K. S., Redwing, J. M. (1999) Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor. Applied Physics Letters, 74 (25). 3890-3892 doi:10.1063/1.124214
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Li, B. K., Ge, W. K., Wang, J. N., Chen, K. J. (2008) Persistent photoconductivity and carrier transport in AlGaN∕GaN heterostructures treated by fluorine plasma. Applied Physics Letters, 92 (8). 82105pp. doi:10.1063/1.2888743
Li, J. Z., Lin, J. Y., Jiang, H. X., Khan, M. A. (1998) Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector. Applied Physics Letters, 72 (22). 2868-2870 doi:10.1063/1.121485
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