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Yu, E. T., Dang, X. Z., Yu, L. S., Qiao, D., Asbeck, P. M., Lau, S. S., Sullivan, G. J., Boutros, K. S., Redwing, J. M. (1998) Schottky barrier engineering in III–V nitrides via the piezoelectric effect. Applied Physics Letters, 73 (13). 1880-1882 doi:10.1063/1.122312

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Reference TypeJournal (article/letter/editorial)
TitleSchottky barrier engineering in III–V nitrides via the piezoelectric effect
JournalApplied Physics Letters
AuthorsYu, E. T.Author
Dang, X. Z.Author
Yu, L. S.Author
Qiao, D.Author
Asbeck, P. M.Author
Lau, S. S.Author
Sullivan, G. J.Author
Boutros, K. S.Author
Redwing, J. M.Author
Year1998 (September 28)Volume73
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.122312Search in ResearchGate
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Mindat Ref. ID8521930Long-form Identifiermindat:1:5:8521930:8
GUID0
Full ReferenceYu, E. T., Dang, X. Z., Yu, L. S., Qiao, D., Asbeck, P. M., Lau, S. S., Sullivan, G. J., Boutros, K. S., Redwing, J. M. (1998) Schottky barrier engineering in III–V nitrides via the piezoelectric effect. Applied Physics Letters, 73 (13). 1880-1882 doi:10.1063/1.122312
Plain TextYu, E. T., Dang, X. Z., Yu, L. S., Qiao, D., Asbeck, P. M., Lau, S. S., Sullivan, G. J., Boutros, K. S., Redwing, J. M. (1998) Schottky barrier engineering in III–V nitrides via the piezoelectric effect. Applied Physics Letters, 73 (13). 1880-1882 doi:10.1063/1.122312
In(1998, September) Applied Physics Letters Vol. 73 (13) AIP Publishing

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Yu, L. S., Xing, Q. J., Qiao, D., Lau, S. S., Boutros, K. S., Redwing, J. M. (1998) Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure. Applied Physics Letters, 73 (26). 3917-3919 doi:10.1063/1.122935
Dang, X. Z., Asbeck, P. M., Yu, E. T., Sullivan, G. J., Chen, M. Y., McDermott, B. T., Boutros, K. S., Redwing, J. M. (1999) Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor. Applied Physics Letters, 74 (25). 3890-3892 doi:10.1063/1.124214
Yu, L. S., Qiao, D. J., Xing, Q. J., Lau, S. S., Boutros, K. S., Redwing, J. M. (1998) Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates. Applied Physics Letters, 73 (2). 238-240 doi:10.1063/1.121767
Yu, E. T., Sullivan, G. J., Asbeck, P. M., Wang, C. D., Qiao, D., Lau, S. S. (1997) Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors. Applied Physics Letters, 71 (19). 2794-2796 doi:10.1063/1.120138
Dang, X. Z., Wang, C. D., Yu, E. T., Boutros, K. S., Redwing, J. M. (1998) Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures. Applied Physics Letters, 72 (21). 2745-2747 doi:10.1063/1.121077
Qiao, D., Yu, L. S., Lau, S. S., Redwing, J. M., Lin, J. Y., Jiang, H. X. (2000) Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction. Journal of Applied Physics, 87 (2). 801-804 doi:10.1063/1.371944
Yu, L. S., Qiao, D., Jia, L., Lau, S. S., Qi, Y., Lau, K. M. (2001) Study of Schottky barrier of Ni on p-GaN. Applied Physics Letters, 79 (27). 4536-4538 doi:10.1063/1.1428773
Yu, L. S., Liu, Q. Z., Xing, Q. J., Qiao, D. J., Lau, S. S., Redwing, J. (1998) The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes. Journal of Applied Physics, 84 (4). 2099-2104 doi:10.1063/1.368270
Yun, C. H., Wengrow, A. B., Cheung, N. W., Zheng, Y., Welty, R. J., Guan, Z. F., Smith, K. V., Asbeck, P. M., Yu, E. T., Lau, S. S. (1998) Transfer of patterned ion-cut silicon layers. Applied Physics Letters, 73 (19). 2772-2774 doi:10.1063/1.122586
Liu, Q. Z., Yu, L. S., Lau, S. S., Redwing, J. M., Perkins, N. R., Kuech, T. F. (1997) Thermally stable PtSi Schottky contact on n-GaN. Applied Physics Letters, 70 (10). 1275-1277 doi:10.1063/1.118551
Liu, Q. Z., Yu, L. S., Deng, F., Lau, S. S., Redwing, J. M. (1998) Ni and Ni silicide Schottky contacts on n-GaN. Journal of Applied Physics, 84 (2). 881-886 doi:10.1063/1.368151
 
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