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Mamor, M., Auret, F. D., Goodman, S. A., Myburg, G. (1998) Electrical characterization of defects introduced in p-Si1−xGex during electron-beam deposition of Sc Schottky barrier diodes. Applied Physics Letters, 72 (9). 1069-1071 doi:10.1063/1.120967

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Reference TypeJournal (article/letter/editorial)
TitleElectrical characterization of defects introduced in p-Si1−xGex during electron-beam deposition of Sc Schottky barrier diodes
JournalApplied Physics Letters
AuthorsMamor, M.Author
Auret, F. D.Author
Goodman, S. A.Author
Myburg, G.Author
Year1998 (March 2)Volume72
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.120967Search in ResearchGate
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Mindat Ref. ID8521687Long-form Identifiermindat:1:5:8521687:9
GUID0
Full ReferenceMamor, M., Auret, F. D., Goodman, S. A., Myburg, G. (1998) Electrical characterization of defects introduced in p-Si1−xGex during electron-beam deposition of Sc Schottky barrier diodes. Applied Physics Letters, 72 (9). 1069-1071 doi:10.1063/1.120967
Plain TextMamor, M., Auret, F. D., Goodman, S. A., Myburg, G. (1998) Electrical characterization of defects introduced in p-Si1−xGex during electron-beam deposition of Sc Schottky barrier diodes. Applied Physics Letters, 72 (9). 1069-1071 doi:10.1063/1.120967
In(1998, March) Applied Physics Letters Vol. 72 (9) AIP Publishing

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Goodman, S. A., Auret, F. D., Mamor, M., Greiner, A. (1998) Electronic properties of defects introduced in p-type Si1−xGex during ion etching. Applied Physics Letters, 73 (2). 256-258 doi:10.1063/1.121772
Mamor, M., Auret, F. Danie, Goodman, S.A., Myburg, G., Deenapanray, Prakash N.K., Meyer, W.E. (1997) Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si1-xGex. Materials Science Forum, 258. 115-120 doi:10.4028/www.scientific.net/msf.258-263.115
Auret, F. D., Meyer, W. E., Coelho, S., Hayes, M. (2006) Electrical characterization of defects introduced during electron beam deposition of Pd Schottky contacts on n-type Ge. Applied Physics Letters, 88 (24). 242110pp. doi:10.1063/1.2213203
Mamor, M., Auret, F. D., Goodman, S. A., Meyer, W. E., Myburg, G. (1998) Electronic and transformation properties of a metastable defect introduced in epitaxially grown boron-doped p-type Si by alpha particle irradiation. Applied Physics Letters, 72 (24). 3178-3180 doi:10.1063/1.121585
Goodman, Stewart A., Auret, F. Danie, Deenapanray, Prakash N. K., Myburg, Gerrit (1998) Electrical Properties of Sc Schottky Barrier Diodes Fabricated on Argon-Ion Sputtered p-GaAs. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l10
Auret, F. D., Myburg, G., Meyer, W. E., Deenapanray, P. N. K., Nordhoff, H., Goodman, S. A., Murtagh, M., Ye, Shu-Ren, Crean, G. M. (1997) Electrical characterization of defects in SiCl4 plasma-etched n-GaAs and Pd Schottky diodes fabricated on it. Applied Physics Letters, 71 (5). 668-670 doi:10.1063/1.119824
Mamor, M., Ouacha, H., Willander, M., Auret, F. D., Goodman, S. A., Ouacha, A., Sveinbjörnsson, E. (2000) High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Pd/n-Si1−xGex Schottky junctions. Applied Physics Letters, 76 (25). 3750-3752 doi:10.1063/1.126771
Coelho, S. M. M., Auret, F. D., Janse van Rensburg, P. J., Nel, J. M. (2013) Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure. Journal of Applied Physics, 114 (17). 173708pp. doi:10.1063/1.4828999
Auret, F. D., Goodman, S. A., Leclerc, Y., Myburg, G., Schutte, C. (1997) Electronic properties of defects introduced in GaAs during sputter deposition of gold Schottky contacts. Materials Science and Technology, 13. 945-948 doi:10.1179/mst.1997.13.11.945
Goodman, S.A., Auret, F. Danie, Mamor, M., Deenapanray, Prakash N.K., Meyer, W.E. (1997) Electronic Properties of Defects Introduced in n- and p-Type Si1-xGex During Ion Etching. Materials Science Forum, 258. 133-138 doi:10.4028/www.scientific.net/msf.258-263.133
Auret, F. D., Goodman, S. A., Koschnick, F. K., Spaeth, J-M., Beaumont, B., Gibart, P. (1998) Electrical characterization of two deep electron traps introduced in epitaxially grown n-GaN during He-ion irradiation. Applied Physics Letters, 73 (25). 3745-3747 doi:10.1063/1.122881
 
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