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(1998, March) Applied Physics Letters Vol. 72 (9) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1998 (March)Volume72
Issue<   9   >
PublisherAIP Publishing
Mindat Ref. ID8521656Long-form Identifiermindat:1:5:8521656:9
GUID0
Full Reference(1998, March) Applied Physics Letters Vol. 72 (9) AIP Publishing
Plain Text(1998, March) Applied Physics Letters Vol. 72 (9) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 72. AIP Publishing

Contains

Chua, C. L., Thornton, R. L., Treat, D. W., Kneissl, M., Dunnrowicz, C. (1998) Low-threshold InAlGaAs vertical-cavity surface-emitting laser arrays using transparent contacts. Applied Physics Letters, 72 (9). 1001-1003 doi:10.1063/1.120947
Korakakis, D., Ludwig, K. F., Moustakas, T. D. (1998) X-ray characterization of GaN/AlGaN multiple quantum wells for ultraviolet laser diodes. Applied Physics Letters, 72 (9). 1004-1006 doi:10.1063/1.120976
Pruneri, V., Bonfrate, G., Kazansky, P. G., Simonneau, C., Vidakovic, P., Levenson, J. A. (1998) Efficient frequency doubling of 1.5 μm femtosecond laser pulses in quasi-phase-matched optical fibers. Applied Physics Letters, 72 (9). 1007-1009 doi:10.1063/1.120948
Guo, Der-Feng (1998) Heterostructure optoelectronic switch with lightcontrollable S-shaped negative differential resistance. Applied Physics Letters, 72 (9). 1010-1012 doi:10.1063/1.120949
Gigli, G., Rinaldi, R., Lomascolo, M., Cingolani, R., Barbarella, G., Zambianchi, M. (1998) Tayloring of the optical properties by symmetry modification of substituted quaterthiophene single crystals. Applied Physics Letters, 72 (9). 1013-1014 doi:10.1063/1.120950
Mendonça, C. A. C., Laureto, E., Brasil, M. J. S. P., Cotta, M. A., Carvalho, M. M. G., Meneses, E. A. (1998) On the optical properties of InAs/InP systems: The role of two-dimensional structures and three-dimensional islands. Applied Physics Letters, 72 (9). 1015-1017 doi:10.1063/1.120951
Nagel, M., Meyer, C., Heiliger, H.-M., Dekorsy, T., Kurz, H., Hey, R., Ploog, K. (1998) Optical second-harmonic probe for ultra-high frequency on-chip interconnects with benzocyclobutene. Applied Physics Letters, 72 (9). 1018-1020 doi:10.1063/1.120952
Rangel-Rojo, R., Yamada, S., Matsuda, H., Yankelevich, D. (1998) Large near-resonance third-order nonlinearity in an azobenzene-functionalized polymer film. Applied Physics Letters, 72 (9). 1021-1023 doi:10.1063/1.120977
Yam, S. P., Shu, C. (1998) All-optical wavelength switching in a semiconductor laser using self-seeding and external injection-seeding. Applied Physics Letters, 72 (9). 1024-1026 doi:10.1063/1.120953
Banerjee, S., Chakravorty, D. (1998) Optical absorption of composites of nanocrystalline silver prepared by electrodeposition. Applied Physics Letters, 72 (9). 1027-1029 doi:10.1063/1.120954
Pierce, S. G., Culshaw, B., Shan, Q. (1998) Laser generation of ultrasound using a modulated continuous wave laser diode. Applied Physics Letters, 72 (9). 1030-1032 doi:10.1063/1.120955
Koenig, M., Benuzzi, A., Faral, B., Krishnan, J., Boudenne, J. M., Jalinaud, T., Rémond, C., Decoster, A., Batani, D., Beretta, D., Hall, T. A. (1998) Brominated plastic equation of state measurements using laser driven shocks. Applied Physics Letters, 72 (9). 1033-1035 doi:10.1063/1.120956
Otabe, Takuya, Ueda, Kazushige, Kudoh, Atsushi, Hosono, Hideo, Kawazoe, Hiroshi (1998) n-type electrical conduction in transparent thin films of delafossite-type AgInO2. Applied Physics Letters, 72 (9). 1036-1038 doi:10.1063/1.120957
Schmuki, P., Erickson, L. E., Lockwood, D. J., Fraser, J. W., Champion, G., Labbé, H. J. (1998) Formation of visible light emitting porous GaAs micropatterns. Applied Physics Letters, 72 (9). 1039-1041 doi:10.1063/1.120958
Misture, S. T., Pilgrim, S. M., Hicks, J. C., Blue, C. T., Payzant, E. A., Hubbard, C. R. (1998) Measurement of the electrostrictive coefficients of modified lead magnesium niobate using neutron powder diffraction. Applied Physics Letters, 72 (9). 1042-1044 doi:10.1063/1.120944
Blodgett, Mark, Nagy, Peter B. (1998) Anisotropic grain noise in eddy current inspection of noncubic polycrystalline metals. Applied Physics Letters, 72 (9). 1045-1047 doi:10.1063/1.120959
Zhao, J., Glazounov, A. E., Zhang, Q. M., Toby, Brian (1998) Neutron diffraction study of electrostrictive coefficients of prototype cubic phase of relaxor ferroelectric PbMg1/3 Nb2/3 O3. Applied Physics Letters, 72 (9). 1048-1050 doi:10.1063/1.120960
Jovalekić, Č, Pavlović, M., Osmokrović, P., Atanasoska, Lj. (1998) X-ray photoelectron spectroscopy study of Bi4Ti3O12 ferroelectric ceramics. Applied Physics Letters, 72 (9). 1051-1053 doi:10.1063/1.120961
Simoen, E., Claeys, C., Czerwinski, A., Katcki, J. (1998) Accurate extraction of the diffusion current in silicon p-n junction diodes. Applied Physics Letters, 72 (9). 1054-1056 doi:10.1063/1.120962
Jiao, L., Chen, I., Collins, R. W., Wronski, C. R., Hata, N. (1998) An improved analysis for band edge optical absorption spectra in hydrogenated amorphous silicon from optical and photoconductivity measurements. Applied Physics Letters, 72 (9). 1057-1059 doi:10.1063/1.120963
Jiang, Lin, Wang, Qi, Schiff, E. A., Guha, S., Yang, J. (1998) Polarized electroabsorption spectra and light soaking of solar cells based on hydrogenated amorphous silicon. Applied Physics Letters, 72 (9). 1060-1062 doi:10.1063/1.120964
Narasimhan, M., Hagler, M., Cammarata, V., Thakur, M. (1998) Junction devices based on sulfonated polyaniline. Applied Physics Letters, 72 (9). 1063-1065 doi:10.1063/1.120965
Minsky, M. S., Fleischer, S. B., Abare, A. C., Bowers, J. E., Hu, E. L., Keller, S., Denbaars, S. P. (1998) Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence. Applied Physics Letters, 72 (9). 1066-1068 doi:10.1063/1.120966
Mamor, M., Auret, F. D., Goodman, S. A., Myburg, G. (1998) Electrical characterization of defects introduced in p-Si1−xGex during electron-beam deposition of Sc Schottky barrier diodes. Applied Physics Letters, 72 (9). 1069-1071 doi:10.1063/1.120967
Dua, P., Cooper, S. L., Cheng, K. Y. (1998) A novel tool for mapping composition distributions in semiconductor microstructures—application to InxGa1−xP quantum wires. Applied Physics Letters, 72 (9). 1072-1074 doi:10.1063/1.120968
Vignaud, D., Wallart, X., Mollot, F. (1998) Direct and inverse equivalent InAlAs–InP interfaces grown by gas-source molecular beam epitaxy. Applied Physics Letters, 72 (9). 1075-1077 doi:10.1063/1.120969
Grandjean, N., Massies, J. (1998) Real time control of InxGa1−xN molecular beam epitaxy growth. Applied Physics Letters, 72 (9). 1078-1080 doi:10.1063/1.120970
Chen, N. C., Wang, P. Y., Chen, J. F. (1998) Low frequency negative capacitance behavior of molecular beam epitaxial GaAs n-low temperature-i-p structure with low temperature layer grown at a low temperature. Applied Physics Letters, 72 (9). 1081-1083 doi:10.1063/1.120971
Tsukagoshi, Kazuhito, Nakazato, Kazuo (1998) Two-way switching based on turnstile operation. Applied Physics Letters, 72 (9). 1084-1085 doi:10.1063/1.120972
Agarwal, Aditya, Haynes, T. E., Venezia, V. C., Holland, O. W., Eaglesham, D. J. (1998) Efficient production of silicon-on-insulator films by co-implantation of He+ with H+. Applied Physics Letters, 72 (9). 1086-1088 doi:10.1063/1.120945
Otobe, Masanori, Yajima, Hiroshi, Oda, Shunri (1998) Observation of the single electron charging effect in nanocrystalline silicon at room temperature using atomic force microscopy. Applied Physics Letters, 72 (9). 1089-1091 doi:10.1063/1.120973
Shin, Jung H., Kim, Mun-Jun, Seo, Se-young, Lee, Choochon (1998) Composition dependence of room temperature 1.54 μm Er3+ luminescence from erbium-doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Applied Physics Letters, 72 (9). 1092-1094 doi:10.1063/1.120974
Hobart, K. D., Twigg, M. E., Kub, F. J., Desmond, C. A. (1998) Characterization of Si pn junctions fabricated by direct wafer bonding in ultra-high vacuum. Applied Physics Letters, 72 (9). 1095-1097 doi:10.1063/1.120975
Lai, S. L., Carlsson, J. R. A., Allen, L. H. (1998) Melting point depression of Al clusters generated during the early stages of film growth: Nanocalorimetry measurements. Applied Physics Letters, 72 (9). 1098-1100 doi:10.1063/1.120946
Miyachi, Mamoru, Tanaka, Toshiyuki, Kimura, Yoshinori, Ota, Hiroyuki (1998) The activation of Mg in GaN by annealing with minority-carrier injection. Applied Physics Letters, 72 (9). 1101-1103 doi:10.1063/1.120936
Godlewski, M., Wojtowicz, T., Karczewski, G., Kossut, J., Bergman, J. P., Monemar, B. (1998) Comparison of morphology of CdTe/CdMnTe interfaces in heterostructures grown by molecular beam epitaxy in a standard and atomic layer modes. Applied Physics Letters, 72 (9). 1104-1106 doi:10.1063/1.120937
Filatrella, G., Pedersen, N. F., Wiesenfeld, K. (1998) Effect of cross-type bias in a two-dimensional array of short Josephson junctions. Applied Physics Letters, 72 (9). 1107-1109 doi:10.1063/1.120938
Cheng, Zhao-hua, Zhang, Jun-xian, Guo, Hui-qun, van Lier, J., Kronmüller, H., Shen, Bao-gen (1998) Microstructure and hard magnetic properties of nanocomposite Sm2Fe15Ga2Cx permanent magnets with an excess of Fe prepared directly by melt spinning. Applied Physics Letters, 72 (9). 1110-1112 doi:10.1063/1.120939
Gu, J. Y., Ogale, S. B., Rajeswari, M., Venkatesan, T., Ramesh, R., Radmilovic, V., Dahmen, U., Thomas, G., Noh, T. W. (1998) In-plane grain boundary effects on the magnetotransport properties of La0.7Sr0.3MnO3−δ. Applied Physics Letters, 72 (9). 1113-1115 doi:10.1063/1.120940
Ono, T., Miyajima, H., Shigeto, K., Shinjo, T. (1998) Magnetization reversal in submicron magnetic wire studied by using giant magnetoresistance effect. Applied Physics Letters, 72 (9). 1116-1117 doi:10.1063/1.120941
Wang, Wendong, Zhu, Fengwu, Weng, Jun, Xiao, Jimei, Lai, Wuyan (1998) Nanoparticle morphology in a granular Cu–Co alloy with giant magnetoresistance. Applied Physics Letters, 72 (9). 1118-1120 doi:10.1063/1.120942
Brazier, Mark, McElfresh, M., Mansour, Said (1998) Unconventional hysteresis behavior in compositionally graded Pb(Zr,Ti)O3 thin films. Applied Physics Letters, 72 (9). 1121-1123 doi:10.1063/1.120943

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