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Zhou, Y. C., Zhu, Z. H., Crouse, D., Lo, Y. H. (1998) Electrical properties of wafer-bonded GaAs/Si heterojunctions. Applied Physics Letters, 73 (16). 2337-2339 doi:10.1063/1.122454

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Reference TypeJournal (article/letter/editorial)
TitleElectrical properties of wafer-bonded GaAs/Si heterojunctions
JournalApplied Physics Letters
AuthorsZhou, Y. C.Author
Zhu, Z. H.Author
Crouse, D.Author
Lo, Y. H.Author
Year1998 (October 19)Volume73
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.122454Search in ResearchGate
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Mindat Ref. ID8522090Long-form Identifiermindat:1:5:8522090:6
GUID0
Full ReferenceZhou, Y. C., Zhu, Z. H., Crouse, D., Lo, Y. H. (1998) Electrical properties of wafer-bonded GaAs/Si heterojunctions. Applied Physics Letters, 73 (16). 2337-2339 doi:10.1063/1.122454
Plain TextZhou, Y. C., Zhu, Z. H., Crouse, D., Lo, Y. H. (1998) Electrical properties of wafer-bonded GaAs/Si heterojunctions. Applied Physics Letters, 73 (16). 2337-2339 doi:10.1063/1.122454
In(1998, October) Applied Physics Letters Vol. 73 (16) AIP Publishing

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Vanfleet, R. R., Shverdin, M., Silcox, J., Zhu, Z. H., Lo, Y. H. (2000) Interface structures in GaAs wafer bonding: Application to compliant substrates. Applied Physics Letters, 76 (19). 2674-2676 doi:10.1063/1.126440
Xin, H. P., Kavanagh, K. L., Zhu, Z. Q., Tu, C. W. (1999) Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells. Applied Physics Letters, 74 (16). 2337-2339 doi:10.1063/1.123843
Kang, Y., Mages, P., Clawson, A. R., Lau, S. S., Lo, Y. H., Yu, P. K. L., Pauchard, A., Zhu, Z., Zhou, Y. (2001) Wafer-fused p-i-n InGaAs/Si photodiode with photogain. Applied Physics Letters, 79 (7). 970-972 doi:10.1063/1.1394171
Ejeckam, F. E., Chua, C. L., Zhu, Z. H., Lo, Y. H., Hong, M., Bhat, R. (1995) High‐performance InGaAs photodetectors on Si and GaAs substrates. Applied Physics Letters, 67 (26). 3936-3938 doi:10.1063/1.114410
Qian, Y., Zhu, Z. H., Lo, Y. H., Huffaker, D. L., Deppe, D. G., Hou, H. Q., Hammons, B. E., Lin, W., Tu, Y. K. (1997) Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region. Applied Physics Letters, 71 (1). 25-27 doi:10.1063/1.119459
Zhu, Z. H., Zhou, R., Ejeckam, F. E., Zhang, Z., Zhang, J., Greenberg, J., Lo, Y. H., Hou, H. Q., Hammons, B. E. (1998) Growth of InGaAs multi-quantum wells at 1.3 μm wavelength on GaAs compliant substrates. Applied Physics Letters, 72 (20). 2598-2600 doi:10.1063/1.121429
Zhu, Z. H., Pan, C. L., Lo, Y. H., Wu, M. C., Wang, S., Kolner, B. H., Wang, S. Y. (1987) Electro‐optic measurement of standing waves in a GaAs coplanar waveguide. Applied Physics Letters, 50 (18). 1228-1230 doi:10.1063/1.97917
Lo, Y. H., Zhu, Z. H., Pan, C. L., Wang, S. Y., Wang, S. (1987) New technique to detect the GaAs semi‐insulating surface property—cw electro‐optic probing. Applied Physics Letters, 50 (17). 1125-1127 doi:10.1063/1.97937
Chen, K. M., Zhang, Y. X., Qin, G. G., Jin, S. X., Wu, K., Li, C. Y., Gu, Z. N., Zhou, X. H. (1996) Rectification properties and interface states of heterojunctions between solid C60andn‐type GaAs. Applied Physics Letters, 69 (23). 3557-3559 doi:10.1063/1.117244
Christenson, G. L., Miller, S. A., Zhu, Z. H., MacDonald, N. C., Lo, Y. H. (1995) Optical reading and writing on GaAs using an atomic force microscope. Applied Physics Letters, 66 (21). 2780-2782 doi:10.1063/1.113473
Lo, Y. H., Wu, M. C., Lee, H., Wang, S., Liliental‐Weber, Z. (1988) Dislocation microstructures on flat and stepped Si surfaces: Guidance for growing high‐quality GaAs on (100) Si substrates. Applied Physics Letters, 52 (17). 1386-1388 doi:10.1063/1.99124
 
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