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Lo, Y. H., Wu, M. C., Lee, H., Wang, S., Liliental‐Weber, Z. (1988) Dislocation microstructures on flat and stepped Si surfaces: Guidance for growing high‐quality GaAs on (100) Si substrates. Applied Physics Letters, 52 (17). 1386-1388 doi:10.1063/1.99124

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Reference TypeJournal (article/letter/editorial)
TitleDislocation microstructures on flat and stepped Si surfaces: Guidance for growing high‐quality GaAs on (100) Si substrates
JournalApplied Physics Letters
AuthorsLo, Y. H.Author
Wu, M. C.Author
Lee, H.Author
Wang, S.Author
Liliental‐Weber, Z.Author
Year1988 (April 25)Volume52
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.99124Search in ResearchGate
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Mindat Ref. ID8482844Long-form Identifiermindat:1:5:8482844:6
GUID0
Full ReferenceLo, Y. H., Wu, M. C., Lee, H., Wang, S., Liliental‐Weber, Z. (1988) Dislocation microstructures on flat and stepped Si surfaces: Guidance for growing high‐quality GaAs on (100) Si substrates. Applied Physics Letters, 52 (17). 1386-1388 doi:10.1063/1.99124
Plain TextLo, Y. H., Wu, M. C., Lee, H., Wang, S., Liliental‐Weber, Z. (1988) Dislocation microstructures on flat and stepped Si surfaces: Guidance for growing high‐quality GaAs on (100) Si substrates. Applied Physics Letters, 52 (17). 1386-1388 doi:10.1063/1.99124
In(1988, April) Applied Physics Letters Vol. 52 (17) AIP Publishing

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Ejeckam, F. E., Chua, C. L., Zhu, Z. H., Lo, Y. H., Hong, M., Bhat, R. (1995) High‐performance InGaAs photodetectors on Si and GaAs substrates. Applied Physics Letters, 67 (26). 3936-3938 doi:10.1063/1.114410
Lee, M. K., Wuu, D. S., Tung, H. H., Yu, K. Y., Huang, K. C. (1988) Characterization of InP/GaAs epilayers grown on Si substrates by low‐pressure organometallic vapor phase epitaxy. Applied Physics Letters, 52 (11). 880-882 doi:10.1063/1.99260
Paslaski, J., Chen, H. Z., Morkoç, H., Yariv, A. (1988) High‐speed GaAsp‐i‐nphotodiodes grown on Si substrates by molecular beam epitaxy. Applied Physics Letters, 52 (17). 1410-1412 doi:10.1063/1.99131
Hu, Z. G., Ma, J. H., Huang, Z. M., Wu, Y. N., Wang, G. S., Chu, J. H. (2003) Dielectric functions of ferroelectric Bi3.25La0.75Ti3O12 thin films on Si(100) substrates. Applied Physics Letters, 83 (18). 3686-3688 doi:10.1063/1.1619208
Lee, H. S., Park, H. L., Kim, T. W. (2006) Characteristics of CdTe∕ZnTe quantum dots grown on GaAs (100) and Si (100) substrates. Applied Physics Letters, 88 (18). 181914pp. doi:10.1063/1.2201865
Park, K.-D., Yim, S.-Y., Lee, H. S. (2012) Dimensional transition and carrier dynamics in CdxZn1−xTe/ZnTe nanostructures on Si substrates. Applied Physics Letters, 100 (17). 171905pp. doi:10.1063/1.4705413
Yu, H. W., Chang, E. Y., Yamamoto, Y., Tillack, B., Wang, W. C., Kuo, C. I., Wong, Y. Y., Nguyen, H. Q. (2011) Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy. Applied Physics Letters, 99 (17). 171908pp. doi:10.1063/1.3656737
Chen, Y., Lin, X. W., Liliental‐Weber, Z., Washburn, J., Klem, J. F., Tsao, J. Y. (1996) Dislocation formation mechanism in strained InxGa1−xAs islands grown on GaAs(001) substrates. Applied Physics Letters, 68 (1). 111-113 doi:10.1063/1.116773
Nouhi, A., Radhakrishnan, G., Katz, J., Koliwad, K. (1988) Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates. Applied Physics Letters, 52 (24). 2028-2030 doi:10.1063/1.99571
Zhou, Y. C., Zhu, Z. H., Crouse, D., Lo, Y. H. (1998) Electrical properties of wafer-bonded GaAs/Si heterojunctions. Applied Physics Letters, 73 (16). 2337-2339 doi:10.1063/1.122454
Fischer, R., Neuman, D., Zabel, H., Morkoç, H., Choi, C., Otsuka, N. (1986) Dislocation reduction in epitaxial GaAs on Si(100). Applied Physics Letters, 48 (18). 1223-1225 doi:10.1063/1.96988
 
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