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Paslaski, J., Chen, H. Z., Morkoç, H., Yariv, A. (1988) High‐speed GaAsp‐i‐nphotodiodes grown on Si substrates by molecular beam epitaxy. Applied Physics Letters, 52 (17). 1410-1412 doi:10.1063/1.99131

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Reference TypeJournal (article/letter/editorial)
TitleHigh‐speed GaAsp‐i‐nphotodiodes grown on Si substrates by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsPaslaski, J.Author
Chen, H. Z.Author
Morkoç, H.Author
Yariv, A.Author
Year1988 (April 25)Volume52
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.99131Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482859Long-form Identifiermindat:1:5:8482859:8
GUID0
Full ReferencePaslaski, J., Chen, H. Z., Morkoç, H., Yariv, A. (1988) High‐speed GaAsp‐i‐nphotodiodes grown on Si substrates by molecular beam epitaxy. Applied Physics Letters, 52 (17). 1410-1412 doi:10.1063/1.99131
Plain TextPaslaski, J., Chen, H. Z., Morkoç, H., Yariv, A. (1988) High‐speed GaAsp‐i‐nphotodiodes grown on Si substrates by molecular beam epitaxy. Applied Physics Letters, 52 (17). 1410-1412 doi:10.1063/1.99131
In(1988, April) Applied Physics Letters Vol. 52 (17) AIP Publishing

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Chen, H. Z., Paslaski, J., Yariv, A., Morkoç, H. (1988) High‐frequency modulation of AlGaAs/GaAs lasers grown on Si substrate by molecular beam epitaxy. Applied Physics Letters, 52 (8). 605-606 doi:10.1063/1.99378
Kalem, Ş., Chyi, J., Litton, C. W., Morkoç, H., Kan, S. C., Yariv, A. (1988) Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates. Applied Physics Letters, 53 (7). 562-564 doi:10.1063/1.99857
Huang, D., Agarwala, S., Morkoç, H. (1989) Photoluminescence studies of GaAs grown on InP substrates by molecular beam epitaxy. Applied Physics Letters, 54 (1). 51-53 doi:10.1063/1.100832
Fischer, R., Chand, N., Kopp, W., Morkoç, H., Erickson, L. P., Youngman, R. (1985) GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy. Applied Physics Letters, 47 (4). 397-399 doi:10.1063/1.96179
Chen, H. Z., Ghaffari, A., Morkoç, H., Yariv, A. (1987) Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities. Applied Physics Letters, 51 (25). 2094-2096 doi:10.1063/1.98958
Hoenk, Michael E., Chen, Howard Z., Yariv, Amnon, Morkoç, Hadis, Vahala, Kerry J. (1989) Cathodoluminescence measurement of an orientation dependent aluminum concentration in AlxGa1−xAs epilayers grown by molecular beam epitaxy on a nonplanar substrate. Applied Physics Letters, 54 (14). 1347-1349 doi:10.1063/1.100711
Adomi, K., Strite, S., Morkoç, H. (1990) Antiphase‐domain‐free GaAs grown on pseudomorphic Si (100) surfaces by molecular beam epitaxy. Applied Physics Letters, 56 (5). 469-471 doi:10.1063/1.102768
Eng, L. E., Chen, T. R., Sanders, S., Zhuang, Y. H., Zhao, B., Yariv, A., Morkoç, H. (1989) Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 55 (14). 1378-1379 doi:10.1063/1.101599
Chen, H. Z., Ghaffari, A., Wang, H., Morkoç, H., Yariv, A. (1987) Low‐threshold (∼600 A/cm2at room temperature) GaAs/AlGaAs lasers on Si (100). Applied Physics Letters, 51 (17). 1320-1321 doi:10.1063/1.98716
Dingle, R., Weisbuch, C., Störmer, H. L., Morkoç, H., Cho, A. Y. (1982) Characterization of high purity GaAs grown by molecular beam epitaxy. Applied Physics Letters, 40 (6). 507-510 doi:10.1063/1.93159
Kim, Young‐Soon, Ramaswamy, Ramu V., Sakai, Shiro, Matyi, R. J., Shichijo, H. (1988) GaAs/AlGaAs optical waveguides on silicon substrates grown by molecular beam epitaxy. Applied Physics Letters, 53 (17). 1586-1587 doi:10.1063/1.99920
 
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