Hoenk, Michael E., Chen, Howard Z., Yariv, Amnon, Morkoç, Hadis, Vahala, Kerry J. (1989) Cathodoluminescence measurement of an orientation dependent aluminum concentration in AlxGa1−xAs epilayers grown by molecular beam epitaxy on a nonplanar substrate. Applied Physics Letters, 54 (14). 1347-1349 doi:10.1063/1.100711

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Reference Type	Journal (article/letter/editorial)
Title	Cathodoluminescence measurement of an orientation dependent aluminum concentration in AlxGa1−xAs epilayers grown by molecular beam epitaxy on a nonplanar substrate
Journal	Applied Physics Letters
Authors	Hoenk, Michael E.		Author
	Chen, Howard Z.		Author
	Yariv, Amnon		Author
	Morkoç, Hadis		Author
	Vahala, Kerry J.		Author
Year	1989 (April 3)	Volume	54
Issue	14
Publisher	AIP Publishing
DOI	doi:10.1063/1.100711Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8486172	Long-form Identifier	mindat:1:5:8486172:4
GUID	0
Full Reference	Hoenk, Michael E., Chen, Howard Z., Yariv, Amnon, Morkoç, Hadis, Vahala, Kerry J. (1989) Cathodoluminescence measurement of an orientation dependent aluminum concentration in AlxGa1−xAs epilayers grown by molecular beam epitaxy on a nonplanar substrate. Applied Physics Letters, 54 (14). 1347-1349 doi:10.1063/1.100711
Plain Text	Hoenk, Michael E., Chen, Howard Z., Yariv, Amnon, Morkoç, Hadis, Vahala, Kerry J. (1989) Cathodoluminescence measurement of an orientation dependent aluminum concentration in AlxGa1−xAs epilayers grown by molecular beam epitaxy on a nonplanar substrate. Applied Physics Letters, 54 (14). 1347-1349 doi:10.1063/1.100711
In	(1989, April) Applied Physics Letters Vol. 54 (14) AIP Publishing

	Hoenk, Michael E., Nieh, C. W., Chen, Howard Z., Vahala, Kerry J. (1989) Compositional modulation in AlxGa1−xAs epilayers grown by molecular beam epitaxy on the (111) facets of grooves in a nonplanar substrate. Applied Physics Letters, 55 (1). 53-55 doi:10.1063/1.102263
	Hoenk, Michael E., Vahala, Kerry J. (1988) Cathodoluminescence of oval defects in GaAs/AlxGa1−xAs epilayers using an optical fiber light collection system. Applied Physics Letters, 53 (21). 2062-2064 doi:10.1063/1.100319
	*Morkoç, Hadis, Cho, A. Y., Radice, C. (1980) Transport properties of Sn‐doped AlxGa1−xAs grown by molecular beam epitaxy. Journal of Applied Physics, 51 (9). 4882-4884 doi:10.1063/1.328324*
	Chen, H. Z., Paslaski, J., Yariv, A., Morkoç, H. (1988) High‐frequency modulation of AlGaAs/GaAs lasers grown on Si substrate by molecular beam epitaxy. Applied Physics Letters, 52 (8). 605-606 doi:10.1063/1.99378
	Hoenk, M. E., Vahala, K. J. (1989) Cathodoluminescence and transmission electron microscopy of an abrupt lateral junction in algaas grown by molecular beam epitaxy. Scanning, 11 (4). 191-197 doi:10.1002/sca.4950110406
	Paslaski, J., Chen, H. Z., Morkoç, H., Yariv, A. (1988) High‐speed GaAsp‐i‐nphotodiodes grown on Si substrates by molecular beam epitaxy. Applied Physics Letters, 52 (17). 1410-1412 doi:10.1063/1.99131
	Drummond, T. J., Fischer, R., Morkoç, H., Miller, P. (1982) Influence of substrate temperature on the mobility of modulation‐doped AlxGa1−xAs/GaAs heterostructures grown by molecular beam epitaxy. Applied Physics Letters, 40 (5). 430-432 doi:10.1063/1.93096
	Kalem, Ş., Chyi, J., Litton, C. W., Morkoç, H., Kan, S. C., Yariv, A. (1988) Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates. Applied Physics Letters, 53 (7). 562-564 doi:10.1063/1.99857
	Chen, H. Z., Wang, H., Ghaffari, A., Morkoç, H., Yariv, A. (1987) Measurement of Au/GaAs/AlxGa1−xAs hetero‐Schottky barrier height and GaAs/AlxGa1−xAs conduction‐band discontinuity. Applied Physics Letters, 51 (13). 990-991 doi:10.1063/1.98785
	Hoenk, Michael E., Vahala, Kerry J. (1989) Cathodoluminescence system for a scanning electron microscope using an optical fiber for light collection. Review of Scientific Instruments, 60 (2). 226-230 doi:10.1063/1.1140466
	Eng, L. E., Chen, T. R., Sanders, S., Zhuang, Y. H., Zhao, B., Yariv, A., Morkoç, H. (1989) Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 55 (14). 1378-1379 doi:10.1063/1.101599

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