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Cester, Andrea, Paccagnella, Alessandro, Suñé, Jordi, Miranda, Enrique (2001) Post-radiation-induced soft breakdown conduction properties as a function of temperature. Applied Physics Letters, 79 (9). 1336-1338 doi:10.1063/1.1398329

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Reference TypeJournal (article/letter/editorial)
TitlePost-radiation-induced soft breakdown conduction properties as a function of temperature
JournalApplied Physics Letters
AuthorsCester, AndreaAuthor
Paccagnella, AlessandroAuthor
Suñé, JordiAuthor
Miranda, EnriqueAuthor
Year2001 (August 27)Volume79
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.1398329Search in ResearchGate
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Mindat Ref. ID8531245Long-form Identifiermindat:1:5:8531245:6
GUID0
Full ReferenceCester, Andrea, Paccagnella, Alessandro, Suñé, Jordi, Miranda, Enrique (2001) Post-radiation-induced soft breakdown conduction properties as a function of temperature. Applied Physics Letters, 79 (9). 1336-1338 doi:10.1063/1.1398329
Plain TextCester, Andrea, Paccagnella, Alessandro, Suñé, Jordi, Miranda, Enrique (2001) Post-radiation-induced soft breakdown conduction properties as a function of temperature. Applied Physics Letters, 79 (9). 1336-1338 doi:10.1063/1.1398329
In(2001, August) Applied Physics Letters Vol. 79 (9) AIP Publishing

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Miranda, Enrique, Suñé, Jordi (2001) Mesoscopic approach to the soft breakdown failure mode in ultrathin SiO2 films. Applied Physics Letters, 78 (2). 225-227 doi:10.1063/1.1339259
Miranda, Enrique, Suñé, Jordi, Rodríguez, Rosana, Nafría, Montserrat, Martín, Ferran, Aymerich, Xavier (1999) Soft Breakdown in Ultrathin SiO2Layers: the Conduction Problem from a New Point of View. Japanese Journal of Applied Physics, 38. 2223-2226 doi:10.1143/jjap.38.2223
Miranda, E., Cester, A., Paccagnella, A. (2003) Stochastic modeling of progressive breakdown in ultrathin SiO2 films. Applied Physics Letters, 83 (24). 5014-5016 doi:10.1063/1.1634372
Suñé, Jordi, Tous, Santi, Miranda, Enrique (2010) Gate stack insulator breakdown when the interface layer thickness is scaled toward zero. Applied Physics Letters, 97 (21). 213503pp. doi:10.1063/1.3514256
Tous, Santi, Wu, Ernest Y., Miranda, Enrique, Suñé, Jordi (2011) A strong analogy between the dielectric breakdown of high-K gate stacks and the progressive breakdown of ultrathin oxides. Journal of Applied Physics, 109 (12). 124115pp. doi:10.1063/1.3592285
Cester, A., Bandiera, L., Ceschia, M., Ghidini, G., Paccagnella, A. (2001) Noise characteristics of radiation-induced soft breakdown current in ultrathin gate oxides. IEEE Transactions on Nuclear Science, 48 (6) 2093-2100 doi:10.1109/23.983178
Oriols, Xavier, Martı́n, Ferran, Suñé, Jordi (2001) Approach to study the noise properties in nanoscale electronic devices. Applied Physics Letters, 79 (11). 1703-1705 doi:10.1063/1.1402651
Miranda, E., Suñé, J., Rodríguez, R., Nafría, M., Aymerich, X. (1998) Soft breakdown fluctuation events in ultrathin SiO2 layers. Applied Physics Letters, 73 (4). 490-492 doi:10.1063/1.121910
Suñé, Jordi, Wu, Ernest Y. (2005) Temperature-dependent transition to progressive breakdown in thin silicon dioxide based gate dielectrics. Applied Physics Letters, 86 (19). 193502pp. doi:10.1063/1.1925316
Miranda, Enrique, Suñé, Jordi, Oriols, Xavier (2001) Linear and non-linear conduction regimes in broken down gate oxides. Journal of Non-Crystalline Solids, 280 (1) 132-137 doi:10.1016/s0022-3093(00)00365-3
Lian, Xiaojuan, Cartoixà, Xavier, Miranda, Enrique, Perniola, Luca, Rurali, Riccardo, Long, Shibing, Liu, Ming, Suñé, Jordi (2014) Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices. Journal of Applied Physics, 115 (24). 244507pp. doi:10.1063/1.4885419
 
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